公开(公告)号：US20110031567A1

公开(公告)日：2011-02-10

申请号：US12850548

申请日：2010-08-04

申请人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

发明人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

摘要： A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity.

摘要翻译： 一种用于制造MEMS器件的方法，其中底部硅区域形成在衬底上和绝缘层上; 电介质的牺牲区形成在底部区域上; 半导体材料的膜区域在牺牲区域上外延生长; 将膜区域向下挖到牺牲区域以形成通孔; 孔的侧壁和底部以保形方式完全涂覆有多孔材料层; 牺牲区域的至少一部分被选择性地通过多孔材料层去除并形成空腔; 并且孔填充有填充材料，以便形成悬浮在空腔上方的整体膜。

公开(公告)号：US08344466B2

公开(公告)日：2013-01-01

申请号：US12850548

申请日：2010-08-04

申请人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

发明人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

摘要： A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity. Other embodiments are directed to MEMS devices and pressure sensors.

摘要翻译： 一种用于制造MEMS器件的方法，其中底部硅区域形成在衬底上和绝缘层上; 电介质的牺牲区形成在底部区域上; 半导体材料的膜区域在牺牲区域上外延生长; 将膜区域向下挖到牺牲区域以形成通孔; 孔的侧壁和底部以保形方式完全涂覆有多孔材料层; 牺牲区域的至少一部分被选择性地通过多孔材料层去除并形成空腔; 并且孔填充有填充材料，以便形成悬浮在空腔上方的整体膜。 其它实施例涉及MEMS器件和压力传感器。

公开(公告)号：US09162876B2

公开(公告)日：2015-10-20

申请号：US13419230

申请日：2012-03-13

申请人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

发明人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

IPC分类号： B81C1/00 ,  G01L9/00

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

摘要： Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

摘要翻译： 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小能量构型。

公开(公告)号：US10196262B2

公开(公告)日：2019-02-05

申请号：US11958945

申请日：2007-12-18

申请人： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

发明人： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

IPC分类号： H01L27/10 ,  B81C1/00

摘要： A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

公开(公告)号：US20080164576A1

公开(公告)日：2008-07-10

申请号：US11958945

申请日：2007-12-18

申请人： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

发明人： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

IPC分类号： H01L21/04 ,  H01L29/06

CPC分类号： B81C1/00539 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/019 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2203/0714 ,  H01L27/10

摘要： A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

摘要翻译： 一种用于制造用于存储介质的微机电类型的相互作用系统的方法，具有支撑元件的相互作用系统和由支撑元件承载的相互作用元件，其设想是提供具有基板的半导体材料晶片，其具有 第一类电导率（P）和顶面; 在所述顶表面附近的所述衬底的表面部分中形成具有与所述第一类型的导电性（P）相反的第二导电类型（N）的第一相互作用区域; 并且从顶表面开始进行基板的电化学蚀刻，所述蚀刻相对于所述第二导电类型（N）是选择性的，以便移除所述基板的表面部分并将所述第一相互作用区域与所述基板分离 ，从而形成支撑元件。

公开(公告)号：US20120237061A1

公开(公告)日：2012-09-20

申请号：US13419230

申请日：2012-03-13

申请人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

发明人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

IPC分类号： H04R3/00 ,  H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

摘要： Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

摘要翻译： 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小的能量构型。