公开(公告)号：US20110031567A1

公开(公告)日：2011-02-10

申请号：US12850548

申请日：2010-08-04

申请人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

发明人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

摘要： A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity.

摘要翻译： 一种用于制造MEMS器件的方法，其中底部硅区域形成在衬底上和绝缘层上; 电介质的牺牲区形成在底部区域上; 半导体材料的膜区域在牺牲区域上外延生长; 将膜区域向下挖到牺牲区域以形成通孔; 孔的侧壁和底部以保形方式完全涂覆有多孔材料层; 牺牲区域的至少一部分被选择性地通过多孔材料层去除并形成空腔; 并且孔填充有填充材料，以便形成悬浮在空腔上方的整体膜。

公开(公告)号：US08344466B2

公开(公告)日：2013-01-01

申请号：US12850548

申请日：2010-08-04

申请人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

发明人： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

摘要： A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity. Other embodiments are directed to MEMS devices and pressure sensors.

摘要翻译： 一种用于制造MEMS器件的方法，其中底部硅区域形成在衬底上和绝缘层上; 电介质的牺牲区形成在底部区域上; 半导体材料的膜区域在牺牲区域上外延生长; 将膜区域向下挖到牺牲区域以形成通孔; 孔的侧壁和底部以保形方式完全涂覆有多孔材料层; 牺牲区域的至少一部分被选择性地通过多孔材料层去除并形成空腔; 并且孔填充有填充材料，以便形成悬浮在空腔上方的整体膜。 其它实施例涉及MEMS器件和压力传感器。

公开(公告)号：US09162876B2

公开(公告)日：2015-10-20

申请号：US13419230

申请日：2012-03-13

申请人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

发明人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

IPC分类号： B81C1/00 ,  G01L9/00

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

摘要： Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

摘要翻译： 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小能量构型。

公开(公告)号：US20120237061A1

公开(公告)日：2012-09-20

申请号：US13419230

申请日：2012-03-13

申请人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

发明人： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

IPC分类号： H04R3/00 ,  H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

摘要： Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

摘要翻译： 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小的能量构型。

公开(公告)号：US07871894B2

公开(公告)日：2011-01-18

申请号：US11541376

申请日：2006-09-27

申请人： Pietro Corona ,  Flavio Francesco Villa ,  Gabriele Barlocchi

发明人： Pietro Corona ,  Flavio Francesco Villa ,  Gabriele Barlocchi

IPC分类号： H01L21/76

CPC分类号： B81C1/00158 ,  B81B2201/025 ,  B81B2203/0109 ,  B81B2203/0315

摘要： A process for manufacturing a suspended structure of semiconductor material envisages the steps of: providing a monolithic body of semiconductor material having a front face; forming a buried cavity within the monolithic body, extending at a distance from the front face and delimiting, with the front face, a surface region of the monolithic body, said surface region having a first thickness; carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body towards the surface region and thus form a suspended structure above the buried cavity, the suspended structure having a second thickness greater than the first thickness. The thickening thermal treatment is an annealing treatment.

摘要翻译： 制造半导体材料的悬浮结构的方法设想的步骤：提供具有正面的半导体材料的整体; 在所述整体式主体内形成掩埋空腔，所述掩埋腔在所述前表面的一定距离处延伸并且与所述前表面一起界定所述整体式主体的表面区域，所述表面区域具有第一厚度; 进行增稠热处理，使得整体式体的半导体材料朝向表面区域移动，从而在掩埋空腔之上形成悬浮结构，该悬浮结构的第二厚度大于第一厚度。 增稠热处理是退火处理。

公开(公告)号：US07763487B2

公开(公告)日：2010-07-27

申请号：US11417683

申请日：2006-05-04

申请人： Flavio Francesco Villa ,  Pietro Corona ,  Gabriele Barlocchi ,  Lorenzo Baldo

发明人： Flavio Francesco Villa ,  Pietro Corona ,  Gabriele Barlocchi ,  Lorenzo Baldo

IPC分类号： H01L21/00 ,  H01L29/84

CPC分类号： G01L9/0045 ,  G01L13/025

摘要： A process for manufacturing an integrated differential pressure sensor includes forming, in a monolithic body of semiconductor material having a first face and a second face, a cavity extending at a distance from the first face and delimiting therewith a flexible membrane, forming an access passage in fluid communication with the cavity, and forming, in the flexible membrane, at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and delimits, together with the second face, a portion of the monolithic body. In order to form the access passage, the monolithic body is etched so as to form an access trench extending through it.

摘要翻译： 一种用于制造集成差压传感器的方法，包括在具有第一面和第二面的半导体材料的整体中形成一个与第一面相距一定距离的空腔，并将其限定在柔性膜上，形成入口通道 与空腔流体连通，以及在柔性膜中形成至少一个换能元件，其构造成将柔性膜的变形转换为电信号。 空腔形成在距第二面一定距离处的位置，并与第二面一起界定整体式的一部分。 为了形成进入通道，对整体式主体进行蚀刻以便形成延伸通过其的通道沟槽。

公开(公告)号：US07294536B2

公开(公告)日：2007-11-13

申请号：US10327702

申请日：2002-12-20

申请人： Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

发明人： Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

IPC分类号： H01L21/00

CPC分类号： H01L21/76283 ,  H01L21/3003 ,  H01L21/3247 ,  H01L21/76289 ,  H01L21/764 ,  H01L29/0649 ,  Y10S438/967

摘要： A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

摘要翻译： 一种制造SOI晶片的方法，包括以下步骤：在半导体材料的晶片中形成限定半导体材料结构的空腔; 通过热过程稀释结构; 并完全氧化结构。

公开(公告)号：US20060017131A9

公开(公告)日：2006-01-26

申请号：US10327702

申请日：2002-12-20

申请人： Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

发明人： Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

IPC分类号： H01L29/00

CPC分类号： H01L21/76283 ,  H01L21/3003 ,  H01L21/3247 ,  H01L21/76289 ,  H01L21/764 ,  H01L29/0649 ,  Y10S438/967

摘要： A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

公开(公告)号：US06759132B2

公开(公告)日：2004-07-06

申请号：US10295767

申请日：2002-11-14

申请人： Ubaldo Mastromatteo ,  Pietro Corona ,  Flavio Villa ,  Gabriele Barlocchi

发明人： Ubaldo Mastromatteo ,  Pietro Corona ,  Flavio Villa ,  Gabriele Barlocchi

IPC分类号： B32B900

CPC分类号： G11B7/1362 ,  G02B5/08 ,  G02B6/4214 ,  G11B7/123 ,  Y10T428/12528

摘要： Method for manufacturing electromagnetic radiation reflecting devices, said method comprising the steps of: a) providing a silicon substrate defined by at least one first free surface, b) forming on said first surface a layer of protective material provided with an opening which exposes a region of the first free surface, and c)etching the region of the free surface by means of an anisotropic agent to remove at least one portion of the substrate and define a second free surface of the substrate inclined in relation to said first surface. Furthermore, said first free surface is parallel to the crystalline planes {110} of silicon substrate and said step (c) comprises a progressing step of the anisotropic agent such that the second free surface resulting from the etching step is parallel to the planes {100} of said substrate.

摘要翻译： 用于制造电磁辐射反射装置的方法，所述方法包括以下步骤：a）提供由至少一个第一自由表面限定的硅衬底，b）在所述第一表面上形成一层保护材料，所述保护材料层具有暴露区域 的第一自由表面，以及c）借助于各向异性剂蚀刻所述自由表面的区域以去除所述衬底的至少一部分并且限定所述衬底相对于所述第一表面倾斜的第二自由表面。 此外，所述第一自由表面平行于硅衬底的晶面{110}，并且所述步骤（c）包括各向异性剂的进行步骤，使得由蚀刻步骤产生的第二自由表面平行于平面{100 }。

公开(公告)号：US20120223402A1

公开(公告)日：2012-09-06

申请号：US13446976

申请日：2012-04-13

申请人： Flavio Francesco Villa ,  Gabriele Barlocchi ,  Pietro Corona ,  Benedetto Vigna ,  Lorenzo Baldo

发明人： Flavio Francesco Villa ,  Gabriele Barlocchi ,  Pietro Corona ,  Benedetto Vigna ,  Lorenzo Baldo

IPC分类号： H01L29/84

CPC分类号： G01L9/0073 ,  G01L9/0045

摘要： A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.

摘要翻译： 一种电容半导体压力传感器，包括：半导体材料的主体区域; 覆盖大块区域的第一部分的掩埋腔; 以及悬浮在所述掩埋腔上方的膜，其中所述体积区域和所述膜形成在整体式衬底中，并且所述整体式衬底承载用于将所述膜的偏转转换成电信号的结构，其中所述体积区域和所述膜 形成电容感测元件的电极，并且所述换能器结构包括与所述膜电连接并与所述体积区域接触的接触结构。