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    FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW
    1.
    发明申请
    FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW 失效
    具有低WARP和BOW的SIC基板的制造

    公开(公告)号：US20100180814A1

    公开(公告)日：2010-07-22

    申请号：US12664974

    申请日：2008-06-26

    申请人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    发明人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    IPC分类号： C30B33/02 ,  C30B23/00

    CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/066 ,  C30B33/02

    摘要： A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.

    摘要翻译： 制造SiC单晶的方法包括（a）在温度梯度存在下在晶种上生长SiC单晶的物理蒸气转移（PVT），其中SiC单晶的早期生长部分在 比SiC单晶的稍后生长部分的温度低。 一旦生长，SiC单晶在反向温度梯度的存在下退火，其中SiC单晶的后期生长部分处于比SiC单晶的早期生长部分更低的温度。

    Fabrication of SiC substrates with low warp and bow
    2.
    发明授权
    Fabrication of SiC substrates with low warp and bow 失效
    具有低经向和弓形的SiC衬底的制造

    公开(公告)号：US08449671B2

    公开(公告)日：2013-05-28

    申请号：US12664974

    申请日：2008-06-26

    申请人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    发明人： Ping Wu ,  Ilya Zwieback ,  Avinesh K. Gupta ,  Edward Semenas

    IPC分类号： C30B23/00

    CPC分类号： C30B29/36 ,  C30B23/002 ,  C30B23/066 ,  C30B33/02

    摘要： A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.

    摘要翻译： 制造SiC单晶的方法包括（a）在温度梯度存在下在晶种上生长SiC单晶的物理蒸气转移（PVT），其中SiC单晶的早期生长部分在 比SiC单晶的稍后生长部分的温度低。 一旦生长，SiC单晶在反向温度梯度的存在下退火，其中SiC单晶的后期生长部分处于比SiC单晶的早期生长部分更低的温度。

    SiC Single Crystal Sublimation Growth Apparatus
    5.
    发明申请
    SiC Single Crystal Sublimation Growth Apparatus 有权

    公开(公告)号：US20220002906A1

    公开(公告)日：2022-01-06

    申请号：US17447742

    申请日：2021-09-15

    申请人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

    发明人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

    IPC分类号： C30B29/36 ,  C30B23/00

    摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

    Method of annealing a sublimation grown crystal
    7.
    发明授权
    Method of annealing a sublimation grown crystal 有权
    使升华生长的晶体退火的方法

    公开(公告)号：US07767022B1

    公开(公告)日：2010-08-03

    申请号：US11788384

    申请日：2007-04-19

    申请人： Avinash K. Gupta ,  Ilya Zwieback ,  Jihong Chen ,  Marcus Getkin ,  Walter R. M. Stepko ,  Edward Semenas

    发明人： Avinash K. Gupta ,  Ilya Zwieback ,  Jihong Chen ,  Marcus Getkin ,  Walter R. M. Stepko ,  Edward Semenas

    IPC分类号： C30B23/00

    CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B33/02

    摘要： A crystal is sublimation grown in a crucible by way of a temperature gradient in the presence of between 1 and 200 Torr of inert gas. The pressure of the inert gas is then increased to between 300 and 600 Torr, while the temperature gradient is maintained substantially constant. The temperature gradient is then reduced and the temperature in the crucible is increased sufficiently to anneal the crystal. Following cooling and removal from the crucible, the crystal is heated in the presence of oxygen in an enclosure to a temperature sufficient to remove unwanted material from the crystal. Following cooling and removal from the enclosure, the crystal surrounded by another instance of the source material is heated in a crucible in the presence 200 and 600 Torr of inert gas to a temperature sufficient to anneal the crystal.

    摘要翻译： 在惰性气体的1至200乇的存在下，通过温度梯度在坩埚中生长晶体。 然后将惰性气体的压力增加到300至600托之间，同时温度梯度保持基本恒定。 然后降低温度梯度，并使坩埚中的温度充分增加以使晶体退火。 在从坩埚中冷却和除去之后，将晶体在外壳中的氧气存在下加热到足以从晶体去除不需要的材料的温度。 在从壳体冷却和除去之后，将源材料的另一个实例包围的晶体在惰性气体存在的200和600乇的坩埚中加热到足以使晶体退火的温度。

    Reduction of carbon inclusions in sublimation grown SiC single crystals
    8.
    发明授权
    Reduction of carbon inclusions in sublimation grown SiC single crystals 失效
    在升华生长的SiC单晶中减少碳夹杂物

    公开(公告)号：US07547360B2

    公开(公告)日：2009-06-16

    申请号：US11904593

    申请日：2007-09-27

    申请人： Avinash K. Gupta ,  Edward Semenas ,  Ilya Zwieback

    发明人： Avinash K. Gupta ,  Edward Semenas ,  Ilya Zwieback

    IPC分类号： C30B25/12

    CPC分类号： C30B29/36 ,  C30B23/00

    摘要： In a method of SiC single crystal growth, a SiC single crystal seed and polycrystalline SiC source material are provided in spaced relation inside of a graphite growth crucible along with at least one compound capable of forming SiO gas in the growth crucible. The growth crucible is heated whereupon the gaseous SiO forms and reacts with carbon in the growth crucible thereby avoiding the introduction of carbon into the SiC single crystal before and during the growth thereof and the SiC source material vaporizes and is transported via a temperature gradient in the growth crucible to the seed crystal where it precipitates and forms a SiC single crystal.

    摘要翻译： 在SiC单晶生长方法中，SiC石墨晶种和多晶SiC源材料与石墨生长坩埚中的至少一种能够在生长坩埚中形成SiO气体的化合物一起间隔地设置。 加热生长坩埚，由此气态SiO形成并与生长坩埚中的碳反应，从而避免在生长坩埚之前和期间将碳引入SiC单晶中，并且SiC源材料蒸发并通过温度梯度传送 生长坩埚至晶种沉淀并形成SiC单晶。

    Low-Doped Semi-Insulating Sic Crystals and Method
    9.
    发明申请
    Low-Doped Semi-Insulating Sic Crystals and Method 审中-公开
    低掺杂半绝缘矽晶体和方法

    公开(公告)号：US20080190355A1

    公开(公告)日：2008-08-14

    申请号：US11629584

    申请日：2005-07-06

    申请人： Jihong Chen ,  Ilya Zwieback ,  Avinash K. Gupta ,  Donovan L. Barrett ,  Richard H. Hopkins ,  Edward Semenas ,  Thomas A. Anderson ,  Andrew E. Souzis

    发明人： Jihong Chen ,  Ilya Zwieback ,  Avinash K. Gupta ,  Donovan L. Barrett ,  Richard H. Hopkins ,  Edward Semenas ,  Thomas A. Anderson ,  Andrew E. Souzis

    IPC分类号： C30B33/02 ,  H01B1/02

    CPC分类号： H01L29/1608 ,  C30B23/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02581 ,  H01L21/02631

    摘要： The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.

    摘要翻译： 本发明涉及用于半导体器件的半绝缘碳化硅的衬底及其制造方法。 基板的电阻率高于106欧姆 - 厘米，优选高于108欧姆 - 厘米，最优选高于109欧姆 - 厘米，电容低于5 pF / mm2，最好低于1 pF / mm2。 基板的电学特性由少量的加入的深度杂质控制，其浓度足够大以控制电气行为，但足够小以避免结构缺陷。 底物具有无意的背景杂质浓度，包括浅供体和受体，故意降低至5.1016cm-3以下，优选低于1.1016cm-3，深层杂质的浓度较高，优选至少高两倍 ，比浅受体和浅供体的浓度之间的差异。 深层杂质包括选自周期性基团IB，IIB，IIIB，IVB，VB，VIB，VIIB和VIIIB的金属之一。 钒是首选的深层元素。 除了控制电阻率和电容之外，本发明的另一个优点是在整个晶体上的电均匀性的增加和晶体缺陷密度的降低。

    Guided diameter SiC sublimation growth with multi-layer growth guide
    10.
    发明授权
    Guided diameter SiC sublimation growth with multi-layer growth guide 有权
    引导直径SiC升华生长与多层生长指导

    公开(公告)号：US08313720B2

    公开(公告)日：2012-11-20

    申请号：US12522549

    申请日：2008-01-15

    申请人： Ilya Zwieback ,  Avinash K. Gupta ,  Edward Semenas ,  Thomas E. Anderson

    发明人： Ilya Zwieback ,  Avinash K. Gupta ,  Edward Semenas ,  Thomas E. Anderson

    IPC分类号： C01B31/36

    CPC分类号： C30B29/36 ,  C30B23/005 ,  C30B35/00

    摘要： In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.

    摘要翻译： 在SiC锭的生长中，在坩埚的底部装载有SiC源材料的坩埚和坩埚顶部的SiC晶种的生长坩埚内部设置生长引导件。 生长引导件具有限定生长引导件中的开口的至少一部分的内层和支撑坩埚中的内层的外层。 开口面向源材料，晶种位于与源材料相对的开口端。 内层由具有比形成外层的第二不同材料更高的导热性的第一材料形成。 源材料通过生长引导件中的开口在生长坩埚中的晶种上生长升华，从而在晶种上形成SiC棒。