公开(公告)号：US09281242B2

公开(公告)日：2016-03-08

申请号：US13659928

申请日：2012-10-25

Applicant: Po-Chun Lin

Inventor： Po-Chun Lin

IPC: H01L25/065 ,  H01L21/768 ,  H01L25/04 ,  H01L23/48 ,  H01L25/11 ,  H01L25/075 ,  H01L25/07

CPC classification number: H01L21/76898 ,  H01L21/486 ,  H01L23/481 ,  H01L25/043 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/0756 ,  H01L25/117 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) stacked structure made of stacked substrates. Each substrate includes multiple tapered through silicon vias, wherein the wider end of each tapered through silicon via is provided with a recessed portion and the narrower end of each tapered through silicon via protrudes from the substrate. The substrates are stacked one after another with the narrower end of each tapered through silicon via being fitting and jointing into a corresponding recessed portion of the tapered through silicon via.

Abstract translation: 由堆叠衬底制成的硅通孔（TSV）堆叠结构。 每个衬底包括多个锥形通孔硅通孔，其中每个锥形通孔硅通孔的较宽端设置有凹陷部分，并且每个锥形硅通孔的较窄端部从衬底突出。 基板通过与锥形通孔硅的相应的凹入部分的配合和接合而逐渐堆叠成每个锥形的硅的较窄端。

公开(公告)号：US20130341807A1

公开(公告)日：2013-12-26

申请号：US13531601

申请日：2012-06-25

Applicant: Po-Chun Lin

Inventor： Po-Chun Lin

IPC: H01L23/28

CPC classification number: H01L23/3128 ,  H01L23/13 ,  H01L23/49816 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor package structure includes a package substrate having a first surface, a second surface opposite to the first surface, and a sidewall surface between the first surface and the second surface. A semiconductor device is mounted on the first surface. A mold cap encapsulates the semiconductor device. The mold cap includes a vertical extension portion covering the sidewall surface and a horizontal extension portion covering a periphery of a solder ball implanting region on the second surface.

Abstract translation: 半导体封装结构包括具有第一表面，与第一表面相对的第二表面以及第一表面和第二表面之间的侧壁表面的封装衬底。 半导体器件安装在第一表面上。 模具帽封装半导体器件。 模具盖包括覆盖侧壁表面的垂直延伸部分和覆盖第二表面上的焊球注入区域的周边的水平延伸部分。

公开(公告)号：US20140118978A1

公开(公告)日：2014-05-01

申请号：US13659916

申请日：2012-10-25

Applicant: Po-Chun Lin ,  Han-Ning Pei

Inventor： Po-Chun Lin ,  Han-Ning Pei

IPC: H05K1/02 ,  B32B3/30 ,  H05K1/18

CPC classification number: H05K1/02 ,  H01L23/13 ,  H01L23/3157 ,  H01L23/49816 ,  H01L24/48 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4824 ,  H01L2224/4826 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/8592 ,  H01L2224/85951 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T428/24612 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A package substrate is disclosed. The package substrate includes a base layer and a dam structure or a dent structure on at least one side of the base layer. The base layer may be a CCL core, a molding compound, or an epoxy base.

Abstract translation: 公开了封装衬底。 封装衬底在基层的至少一侧上包括基层和坝结构或凹陷结构。 基层可以是CCL芯，模塑料或环氧基。

公开(公告)号：US20140117556A1

公开(公告)日：2014-05-01

申请号：US13659928

申请日：2012-10-25

Applicant: Po-Chun Lin

Inventor： Po-Chun Lin

IPC: H01L23/522 ,  H01L21/60

CPC classification number: H01L21/76898 ,  H01L21/486 ,  H01L23/481 ,  H01L25/043 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/0756 ,  H01L25/117 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A through silicon via (TSV) stacked structure made of stacked substrates. Each substrate includes multiple tapered through silicon vias, wherein the wider end of each tapered through silicon via is provided with a recessed portion and the narrower end of each tapered through silicon via protrudes from the substrate. The substrates are stacked one after another with the narrower end of each tapered through silicon via being fitting and jointing into a corresponding recessed portion of the tapered through silicon via.

Abstract translation: 由堆叠衬底制成的硅通孔（TSV）堆叠结构。 每个衬底包括多个锥形通孔硅通孔，其中每个锥形通孔硅通孔的较宽端设置有凹陷部分，并且每个锥形硅通孔的较窄端部从衬底突出。 基板通过与锥形通孔硅的相应的凹入部分的配合和接合而逐渐堆叠成每个锥形的硅的较窄端。