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    Methods of rejuvenating sputtering targets
    3.
    发明授权
    Methods of rejuvenating sputtering targets 有权
    振动溅射靶材的方法

    公开(公告)号：US08491959B2

    公开(公告)日：2013-07-23

    申请号：US13465475

    申请日：2012-05-07

    申请人： Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmerman

    发明人： Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmerman

    IPC分类号： B05D1/02

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    摘要： In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a refractory metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.

    摘要翻译： 在各种实施方案中，提供了最初通过铸锭冶金或粉末冶金形成并且包括溅射靶材料的溅射靶，其中包含难熔金属的溅射靶材料（i），（ii）在其中限定凹陷的沟槽，和（iii ）具有第一晶粒尺寸和第一晶体微结构。 将粉末喷涂在沟槽内以在其中形成层，层（i）包含金属，（ii）具有比第一粒度更细的第二粒度，和（iii）具有更随机的第二结晶微结构 比第一个结晶微结构。 将粉末喷射沉积在沟槽内，在层和溅射靶材料之间形成明显的边界线。

    Fine Grained, Non Banded, Refractory Metal Sputtering Targets with a Uniformly Random Crystallographic Orientation, Method for Making Such Film, and Thin Film Based Devices and Products Made Therefrom
    8.
    发明申请
    Fine Grained, Non Banded, Refractory Metal Sputtering Targets with a Uniformly Random Crystallographic Orientation, Method for Making Such Film, and Thin Film Based Devices and Products Made Therefrom 有权
    具有均匀随机晶体取向的细晶粒，非带状耐火金属溅射靶，制造这种膜的方法以及由此制成的薄膜基器件和产品

    公开(公告)号：US20080271779A1

    公开(公告)日：2008-11-06

    申请号：US11937164

    申请日：2007-11-08

    申请人： Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann

    发明人： Steven A. Miller ,  Olaf Schmidt-Park ,  Prabhat Kumar ,  Richard Wu ,  Shuwei Sun ,  Stefan Zimmermann

    IPC分类号： C23C14/00 ,  B05D1/12 ,  G11B5/62

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    摘要： The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    摘要翻译： 本发明涉及一种溅射靶，其具有小于44微米的均匀均匀的晶粒结构，不受电子背散射衍射（“EBSD”）测量的优选纹理取向，并且在整个体内不显示晶粒尺寸条带或纹理条带 的目标。 本发明涉及一种具有透镜或扁平晶粒结构的溅射靶，没有通过EBSD测量的优选的织构定向，并且在靶的整个体内不显示晶粒尺寸或纹理条纹，并且其中靶具有结合有层 溅射材料和在背板界面处的至少一个附加层，所述层在背板的CTE和溅射材料层的CTE之间具有热膨胀系数（“CTE”）。 本发明还涉及薄膜及其使用溅射靶和其它应用的应用，例如涂层，太阳能装置，半导体器件等。本发明还涉及一种修复或恢复溅射靶的方法。