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16 条记录 (耗时 0.03 秒)

    TRANSMISSION, CACHING, AND SEARCHING OF VIDEO STREAMS BASED ON FRAME DEPENDENCIES AND CONTENT
    2.
    发明申请
    TRANSMISSION, CACHING, AND SEARCHING OF VIDEO STREAMS BASED ON FRAME DEPENDENCIES AND CONTENT 审中-公开

    公开(公告)号：US20190325227A1

    公开(公告)日：2019-10-24

    申请号：US16457818

    申请日：2019-06-28

    申请人： Ned M. Smith ,  Yi Zou ,  Shao-Wen Yang ,  Gang Shen

    发明人： Ned M. Smith ,  Yi Zou ,  Shao-Wen Yang ,  Gang Shen

    IPC分类号： G06K9/00 ,  G06F16/738

    摘要： In one embodiment, an apparatus comprises processing circuitry to: receive, via a network interface, a video stream comprising a plurality of video frames; identify a plurality of dependencies among the plurality of video frames; identify, based on the plurality of dependencies, a first subset of video frames to be transmitted using a first transmission method and a second subset of video frames to be transmitted using a second transmission method, wherein the first subset of video frames and the second subset of video frames are identified from the plurality of video frames, and wherein the first transmission method provides a higher quality of service than the second transmission method; transmit, via the network interface, the first subset of video frames to a corresponding destination using the first transmission method; and transmit, via the network interface, the second subset of video frames to the corresponding destination using the second transmission method.

    Method and apparatus for performing optical proximity and photomask correction
    3.
    发明授权
    Method and apparatus for performing optical proximity and photomask correction 有权
    用于执行光学接近和光掩模校正的方法和装置

    公开(公告)号：US09122160B2

    公开(公告)日：2015-09-01

    申请号：US13832557

    申请日：2013-03-15

    申请人： Gek Soon Chua ,  Yi Zou ,  Wei-Long Wang ,  Byoung Il Choi

    发明人： Gek Soon Chua ,  Yi Zou ,  Wei-Long Wang ,  Byoung Il Choi

    IPC分类号： G06F17/50 ,  G03F1/00

    CPC分类号： G03F1/144 ,  G03F1/36 ,  G06F17/5081 ,  G06F2217/12 ,  Y02P90/265 ,  Y02T10/82

    摘要： An approach is provided for enabling simulation of photomask contour shapes, performing verification on the simulated photomask shapes, and correcting errors in OPC correction or bad fracturing methods to perform photomask proximity correction in real time before physically writing of the photomask. Embodiments include performing optical proximity correction of a photomask of a semiconductor layout to generate a corrected photomask, simulating the corrected photomask to generate one or more simulated contour shapes within a simulated photomask, verifying the simulated contour shapes to determine errors associated with the simulated photomask, and correcting the errors in the simulated contour shapes of the simulated photomask to generate a final photomask.

    摘要翻译： 提供了一种方法，用于实现光掩模轮廓形状的模拟，对模拟的光掩模形状进行验证，以及校正OPC校正中的错误或不良压裂方法，以在物理写入光掩模之前实时执行光掩模接近校正。 实施例包括执行半导体布局的光掩模的光学邻近校正以产生校正的光掩模，模拟校正的光掩模以在模拟光掩模内生成一个或多个模拟轮廓形状，验证模拟轮廓形状以确定与模拟光掩模相关联的误差， 并且校正模拟光掩模的模拟轮廓形状中的误差以产生最终的光掩模。

    Methods for decomposing circuit design layouts and for fabricating semiconductor devices using decomposed patterns
    4.
    发明授权
    Methods for decomposing circuit design layouts and for fabricating semiconductor devices using decomposed patterns 有权
    分解电路设计布局和使用分解模式制造半导体器件的方法

    公开(公告)号：US08555215B2

    公开(公告)日：2013-10-08

    申请号：US13400445

    申请日：2012-02-20

    申请人： Yi Zou ,  Swamy Maddu ,  Lynn T. Wang ,  Vito Dai ,  Luigi Capodieci ,  Peng Xie

    发明人： Yi Zou ,  Swamy Maddu ,  Lynn T. Wang ,  Vito Dai ,  Luigi Capodieci ,  Peng Xie

    IPC分类号： G06F17/50

    CPC分类号： G03F1/70

    摘要： Methods for fabricating semiconductor devices are provided. In an embodiment, a method of fabricating a semiconductor device includes scanning a circuit design layout and proposing patterns for decomposed layouts. The proposed patterns are then compared with a library of prior patterns including a category of forbidden patterns and a category of preferred patterns. If a selected proposed pattern matches a forbidden pattern, the selected proposed pattern is eliminated. If the selected proposed pattern matches a preferred pattern, then the selected proposed pattern is identified for use in the decomposed layouts. Decomposed layouts are generated from the identified patterns. A plurality of masks is fabricated based on the decomposed layouts. Then a multiple patterning lithographic technique is performed with the plurality of masks on a semiconductor substrate.

    摘要翻译： 提供制造半导体器件的方法。 在一个实施例中，制造半导体器件的方法包括扫描电路设计布局并提出用于分解布局的图案。 然后将所提出的模式与包括禁止模式类别和优选模式类别的先前模式的库进行比较。 如果所选择的提议模式匹配禁止模式，则删除所选择的提议模式。 如果所选择的提出的模式匹配优选模式，则所选择的提出的模式被识别用于分解的布局。 分辨的布局是从识别的图案生成的。 基于分解的布局制造多个掩模。 然后用半导体衬底上的多个掩模进行多重图形化光刻技术。

    System for generating and optimizing mask assist features based on hybrid (model and rules) methodology
    7.
    发明授权
    System for generating and optimizing mask assist features based on hybrid (model and rules) methodology 有权
    基于混合（模型和规则）方法生成和优化掩模辅助功能的系统

    公开(公告)号：US08103979B2

    公开(公告)日：2012-01-24

    申请号：US12254172

    申请日：2008-10-20

    申请人： Yi Zou ,  Luigi Capodieci

    发明人： Yi Zou ,  Luigi Capodieci

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： An optimal assist feature rules set for an integrated circuit design layout is created using inverse lithography. The full chip layout is lithographically simulated, and printability failure areas are determined. The features are analyzed for feature layout patterns, and inverse lithography is performed on the unique feature layouts to form assist features. The resulting layout of assist features is analyzed to create an assist feature rules set. The rules can then be applied to a photomask patterned with the integrated circuit design layout to print optimal assist features. The resulting photomask may be used to form an integrated circuit on a semiconductor substrate.

    摘要翻译： 使用反光刻法创建集成电路设计布局的最佳辅助特征规则集。 全芯片布局被光刻仿真，并确定了可印刷性故障区域。 对特征布局图案进行特征分析，并对独特特征布局进行反光刻以形成辅助特征。 分析所得到的辅助特征布局以创建辅助特征规则集。 然后可以将规则应用于利用集成电路设计布局图案化的光掩模，以打印最佳辅助特征。 所得到的光掩模可用于在半导体衬底上形成集成电路。

    Transparent copolyester, preparing method thereof and articles made from the same
    8.
    发明授权
    Transparent copolyester, preparing method thereof and articles made from the same 有权
    透明共聚聚酯，其制备方法和由其制成的制品

    公开(公告)号：US09102782B2

    公开(公告)日：2015-08-11

    申请号：US13571317

    申请日：2012-08-09

    申请人： Ning Xu ,  Guixiang Zhu ,  Wei Zhang ,  Ling Han ,  Yi Zou ,  Wenxi Ji

    发明人： Ning Xu ,  Guixiang Zhu ,  Wei Zhang ,  Ling Han ,  Yi Zou ,  Wenxi Ji

    IPC分类号： C08G18/42 ,  C08G63/60 ,  C08G63/91 ,  C08G18/73 ,  C08G18/34

    CPC分类号： C08G18/4216 ,  C08G18/348 ,  C08G18/73 ,  C08G63/60 ,  C08G63/91

    摘要： The present invention relates to a transparent copolyester, wherein the transparent copolyester comprises an aliphatic-aromatic copolyester segment A, a segment B having repeating units —O—CH(CH3)—C(O)—, and structural units C derived from polyisocyanate(s), wherein the weight ratio for the segment A, segment B and structural unit C is 100:(100-2000):(0.1-10) and wherein the weight-average molecular weight Mw of the transparent copolyester is from 50,000 to 1,000,000. The present invention further relates to a preparation method for a transparent copolyester, including polymerizing lactide, a hydroxyl-terminated aliphatic-aromatic copolyester and a polyisocyanate in the presence of a catalyst; wherein the weight ratio for the aliphatic-aromatic copolyester, lactide and polyisocyanate is 100:(100-2000):(0.1-10). The present invention further relates to a transparent copolyester prepared by said method and an article made from the transparent copolyester according to present invention.

    摘要翻译： 本发明涉及一种透明共聚酯，其中该透明共聚聚酯包括脂肪族 - 芳族共聚酯链段A，具有重复单元-O-CH（CH 3）-C（O）的链段B和衍生自多异氰酸酯的结构单元C s），其中段A，段B和结构单元C的重量比为100：（100-2000）：（0.1-10），并且其中透明共聚酯的重均分子量Mw为50,000至1,000,000 。 本发明还涉及一种透明共聚酯的制备方法，包括在催化剂存在下聚合丙交酯，羟基封端的脂族 - 芳族共聚酯和多异氰酸酯; 其中脂族 - 芳族共聚酯，丙交酯和多异氰酸酯的重量比为100：（100-2000）：（0.1-10）。 本发明还涉及通过所述方法制备的透明共聚酯和由根据本发明的透明共聚酯制成的制品。

    METHOD AND APPARATUS FOR PERFORMING OPTICAL PROXIMITY AND PHOTOMASK CORRECTION
    10.
    发明申请
    METHOD AND APPARATUS FOR PERFORMING OPTICAL PROXIMITY AND PHOTOMASK CORRECTION 有权
    用于执行光学近似和光电子校正的方法和装置

    公开(公告)号：US20140282299A1

    公开(公告)日：2014-09-18

    申请号：US13832557

    申请日：2013-03-15

    申请人： Gek Soon CHUA ,  Yi Zou ,  Wei-Long Wang ,  Byoung IL Choi

    发明人： Gek Soon CHUA ,  Yi Zou ,  Wei-Long Wang ,  Byoung IL Choi

    IPC分类号： G03F1/00 ,  G06F17/50

    CPC分类号： G03F1/144 ,  G03F1/36 ,  G06F17/5081 ,  G06F2217/12 ,  Y02P90/265 ,  Y02T10/82

    摘要： An approach is provided for enabling simulation of photomask contour shapes, performing verification on the simulated photomask shapes, and correcting errors in OPC correction or bad fracturing methods to perform photomask proximity correction in real time before physically writing of the photomask. Embodiments include performing optical proximity correction of a photomask of a semiconductor layout to generate a corrected photomask, simulating the corrected photomask to generate one or more simulated contour shapes within a simulated photomask, verifying the simulated contour shapes to determine errors associated with the simulated photomask, and correcting the errors in the simulated contour shapes of the simulated photomask to generate a final photomask.

    摘要翻译： 提供了一种方法，用于实现光掩模轮廓形状的模拟，对模拟的光掩模形状进行验证，以及校正OPC校正中的错误或不良压裂方法，以在物理写入光掩模之前实时执行光掩模接近校正。 实施例包括执行半导体布局的光掩模的光学邻近校正以产生校正的光掩模，模拟校正的光掩模以在模拟光掩模内生成一个或多个模拟轮廓形状，验证模拟轮廓形状以确定与模拟光掩模相关联的误差， 并且校正模拟光掩模的模拟轮廓形状中的误差以产生最终的光掩模。