公开(公告)号：US09483600B2

公开(公告)日：2016-11-01

申请号：US14645336

申请日：2015-03-11

Applicant: QUALCOMM Incorporated

Inventor： Mamta Bansal ,  Uday Doddannagari ,  Paras Gupta ,  Ramaprasath Vilangudipitchai ,  Parissa Najdesamii ,  Dorav Kumar ,  Nitin Partani

IPC: H01L25/00 ,  G06F17/50 ,  H01L27/02 ,  H04W72/04 ,  H01L23/528 ,  H01L27/092

CPC classification number: G06F17/5077 ,  G06F17/5072 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/092 ,  H01L2924/0002 ,  H04W72/0453 ,  Y02D70/00 ,  H01L2924/00

Abstract: A MOS device includes a number of standard cells configured to reduce routing congestions while providing area savings on the MOS device. The standard cells may be single height standard cells that share an n-type well isolated from other nearby n-type wells. The input and output signal pins of the single height standard cells may be configured in a lowest possible metal layer (e.g., M1), while the secondary power pins of the single height standard cells may be configured in a higher metal layer (e.g., M2). Interconnects supplying power to secondary power pins may be configured along vertical tracks and shared among different sets of standard cells, which may reduce the number of vertical tracks used in the MOS device. The number of available horizontal routing tracks in the MOS device may remain unaffected, since the horizontal tracks already used by the primary power/ground mesh are used for power connection.

Abstract translation: MOS器件包括多个标准单元，其被配置为减少路由拥塞，同时在MOS器件上提供区域节省。 标准细胞可以是共享与其他附近n型孔分离的n型井的单高度标准细胞。 单个高度标准单元的输入和输出信号引脚可以配置在最低可能的金属层（例如，M1）中，而单高度标准单元的次级电源引脚可以配置在较高的金属层（例如，M2 ）。 为次级电源引脚供电的互连可以沿着垂直轨道配置，并在不同的标准单元组之间共享，这可以减少在MOS器件中使用的垂直轨道的数量。 MOS器件中可用的水平路由轨迹的数量可能不受影响，因为主电源/接地网格已经使用的水平轨迹用于电源连接。

公开(公告)号：US20150200667A1

公开(公告)日：2015-07-16

申请号：US14155734

申请日：2014-01-15

Applicant: QUALCOMM Incorporated

Inventor： Shiva Ram Chandrasekaran ,  Chandrasekhar Reddy Singasani ,  Joey Dacanay ,  Mamta Bansal ,  Arman Ohanian ,  Satish Raj ,  Kiran Srinivasa Sastry ,  Abhirami Senthilkumaran ,  Tarek Zghal ,  Parissa Najdesamii ,  Sunil Kumar

IPC: H03K19/00 ,  G06F1/32

CPC classification number: H03K19/0008 ,  G06F1/3287 ,  Y02D10/171 ,  Y02D50/20

Abstract: Provided are systems and methods for reducing power consumption in the interface and routing circuitry associated with various core modules of an integrated circuit or system. One system includes core modules, glue logic domains adapted to interface the plurality of core modules, and a power controller electrically coupled to the glue logic domains. Each glue logic domain includes a glue logic module implemented as a soft macro with metal traces extending beyond an extent of the glue logic module. The power controller decouples power from selected glue logic domains based on control signals and/or detected power down states of core modules and/or other glue logic domains. The power controller facilitates the power transitions using logic state retention, logic state clamping, ordered or scheduled transitioning, and/or other power transition systems and methods.

Abstract translation: 提供了用于降低与集成电路或系统的各种核心模块相关联的接口和路由电路中的功耗的系统和方法。 一个系统包括核心模块，适于接合多个核心模块的胶合逻辑域，以及电连接到胶合逻辑域的功率控制器。 每个胶合逻辑域包括实现为具有超出胶合逻辑模块的范围的金属迹线的软宏的胶合逻辑模块。 功率控制器基于核心模块和/或其他胶合逻辑域的控制信号和/或检测到的掉电状态来将电力与选定的胶合逻辑域分离。 功率控制器使用逻辑状态保持，逻辑状态钳位，有序或调度转换和/或其他功率转换系统和方法来促进功率转换。

公开(公告)号：US08881080B2

公开(公告)日：2014-11-04

申请号：US13725976

申请日：2012-12-21

Applicant: QUALCOMM Incorporated

Inventor： Khusro Sajid ,  Mamta Bansal ,  Karim Arabi

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5036

Abstract: Methods and apparatus for Enhanced Static IR Drop Analysis are provided. Enhanced Static IR Drop Analysis can be used to determine a quality and robustness of a power distribution network in a circuit. In examples, Enhanced Static IR Drop Analysis includes recording time points at which global current demand profile peaks, sampling instantaneous current from individual tile-based current demand profiles at each time point, and running Static IR Analysis for the tiles at the time points to determine tile current use by the tiles during the time points. Enhanced Static IR Drop Analysis can be used for quick assessment of peak current distribution and determining how the peak current distribution stresses the power distribution network. Enhanced Static IR Drop Analysis is useful during earlier stages of circuit design, when quickly producing circuit performance data is imperative and conventional techniques require significant resources.

Abstract translation: 提供了增强型静态IR滴分析的方法和装置。 增强型静态红外线掉电分析可用于确定电路中配电网络的质量和鲁棒性。 在示例中，增强型静态红外线掉电分析包括记录全局电流需求曲线峰值的时间点，在每个时间点从基于瓦片的当前需求曲线采集瞬时电流，以及在时间点运行瓦片的静态IR分析，以确定 瓦片当前使用的瓦片在时间点。 增强型静态IR降落分析可用于快速评估峰值电流分布，并确定峰值电流分布如何强调配电网络。 在电路设计的早期阶段，当快速生成电路性能数据是必不可少的并且常规技术需要大量资源时，增强型静态IR分析分析是非常有用的。

公开(公告)号：US11101207B2

公开(公告)日：2021-08-24

申请号：US16667021

申请日：2019-10-29

Applicant: QUALCOMM Incorporated

Inventor： Mamta Bansal ,  Vincent Xavier Le Bars

IPC: H01L23/522 ,  H01L27/02 ,  H01L23/528 ,  G06F30/392 ,  G06F30/394

Abstract: An integrated circuit (IC), including a first integrated circuit (IC) cell configured to perform a defined operation on a first input signal to generate a first output signal, wherein the first IC cell includes a first metal configured to receive the first input signal or output the first output signal; and a second IC cell configured to perform the defined operation on a second input signal to generate a second output signal, wherein the second IC cell includes a second metal configured to receive the second input signal or the second output signal, wherein the second metal is located substantially in the same location within the second IC cell as the first metal is located within the first IC cell, and wherein the first and second metals are configured differently based on differences in first and second intercell metal interconnects to which the first and second metals electrically connect, respectively.

公开(公告)号：US20140181771A1

公开(公告)日：2014-06-26

申请号：US13725976

申请日：2012-12-21

Applicant: QUALCOMM INCORPORATED

Inventor： Khusro Sajid ,  Mamta Bansal ,  Karim Arabi

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5036

Abstract: Methods and apparatus for Enhanced Static IR Drop Analysis are provided. Enhanced Static IR Drop Analysis can be used to determine a quality and robustness of a power distribution network in a circuit. In examples, Enhanced Static IR Drop Analysis includes recording time points at which global current demand profile peaks, sampling instantaneous current from individual tile-based current demand profiles at each time point, and running Static IR Analysis for the tiles at the time points to determine tile current use by the tiles during the time points. Enhanced Static IR Drop Analysis can be used for quick assessment of peak current distribution and determining how the peak current distribution stresses the power distribution network. Enhanced Static IR Drop Analysis is useful during earlier stages of circuit design, when quickly producing circuit performance data is imperative and conventional techniques require significant resources.

Abstract translation: 提供了增强型静态IR滴分析的方法和装置。 增强型静态红外线掉电分析可用于确定电路中配电网络的质量和鲁棒性。 在示例中，增强型静态红外线掉电分析包括记录全局电流需求曲线峰值的时间点，在每个时间点从基于瓦片的当前需求曲线采集瞬时电流，以及在时间点运行瓦片的静态IR分析，以确定 瓦片当前使用的瓦片在时间点。 增强型静态IR降落分析可用于快速评估峰值电流分布，并确定峰值电流分布如何强调配电网络。 在电路设计的早期阶段，当快速生成电路性能数据是必不可少的并且常规技术需要大量资源时，增强型静态IR分析分析是非常有用的。