公开(公告)号：US20170005160A1

公开(公告)日：2017-01-05

申请号：US14973479

申请日：2015-12-17

Applicant: QUALCOMM Incorporated

Inventor： Shiqun GU ,  Yue LI ,  Ratibor RADOJCIC

IPC: H01L49/02 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L28/60 ,  H01L23/5223 ,  H01L23/53228 ,  H01L28/75

Abstract: Copper (Cu) grain boundaries can move during a thermal cycle resulting in the Cu grain position being offset. Such Cu pumping can disturb the surface of a bottom metal, and can physically break a dielectric of a metal-insulator-metal (MIM) capacitor. By capping the bottom metal with an anchoring cap, Cu pumping is reduced or eliminated.

Abstract translation: 铜（Cu）晶界可以在热循环期间移动，导致Cu晶粒位置偏移。 这种Cu泵浦可能会干扰底部金属的表面，并且可以物理地破坏金属 - 绝缘体 - 金属（MIM）电容器的电介质。 通过用锚固帽盖住底部金属，减少或消除Cu泵送。

公开(公告)号：US20160133614A1

公开(公告)日：2016-05-12

申请号：US14536363

申请日：2014-11-07

Applicant: QUALCOMM Incorporated

Inventor： Shiqun GU ,  Ratibor RADOJCIC ,  Mustafa BADAROGLU ,  Chunlei SHI ,  Yuancheng Christopher PAN

IPC: H01L25/16 ,  H01L23/522 ,  H01L23/498 ,  H01L21/683 ,  H01L21/56 ,  H01L21/768 ,  H01L21/48 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L25/16 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/81005 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/00012

Abstract: The present disclosure provides semiconductor packages and methods for fabricating semiconductor packages. The semiconductor package may comprise a semiconductor device mounted to a first substrate, a voltage regulator mounted to the first substrate and coupled to the semiconductor device, and an inductive element located on a perimeter of the semiconductor device and coupled to the voltage regulator, wherein the inductive element is formed by a plurality of interconnected conductive elements extending vertically from the first substrate.

Abstract translation: 本公开提供了用于制造半导体封装的半导体封装和方法。 半导体封装可以包括安装到第一衬底的半导体器件，安装到第一衬底并耦合到半导体器件的电压调节器，以及位于半导体器件的周边并耦合到电压调节器的电感元件，其中， 电感元件由从第一基板垂直延伸的多个互连导电元件形成。