Arrangement and method to perform scanning readout of ferroelectric bit charges
    1.
    发明授权
    Arrangement and method to perform scanning readout of ferroelectric bit charges 有权
    执行铁电位电荷的扫描读出的布置和方法

    公开(公告)号:US08264941B2

    公开(公告)日:2012-09-11

    申请号:US11964580

    申请日:2007-12-26

    IPC分类号: G11B9/02

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media.

    摘要翻译: 读取存储在铁电介质层中的信息的布置,方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层,对应于信息的畴; 具有尖端的探针,其中介质和尖端适于相对于彼此移动,使得尖端扫描介质的铁电畴,同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路,同时扫描与所述区域接触的尖端,所述信号对应于存储在所述介质中的铁电位电荷的读出信号。

    Memory Media Including Domains HavingTrapped Charges at a Top Region Thereof
    2.
    发明申请
    Memory Media Including Domains HavingTrapped Charges at a Top Region Thereof 审中-公开
    记忆媒体包括在其顶部地区已收取费用的域名

    公开(公告)号:US20090168635A1

    公开(公告)日:2009-07-02

    申请号:US11964608

    申请日:2007-12-26

    IPC分类号: G11B9/00 B05D5/12

    CPC分类号: G11B9/02

    摘要: A memory media and a method to provide same. The memory media includes: a media layer comprising a ferroelectric layer having a bottom surface and a top surface; a plurality of adjacent charge domains defined in the ferroelectric layer, the domains including alternating up domains and down domains each extending between the bottom surface and the top surface; and a trapped charge region adjacent a top surface of the media layer, the trapped charge region including charges in addition to the charges present in the charge domains at regions thereof other than regions adjacent the top surface of the media layer.

    摘要翻译: 一种记忆媒体和一种提供相同的方法。 存储介质包括:介质层,其包括具有底表面和顶表面的铁电层; 限定在铁电体层中的多个相邻的电荷域,所述畴包括各自在底表面和顶表面之间延伸的交替域和下畴; 以及与介质层的顶表面相邻的捕获的电荷区域,除了存在于电荷区域中的电荷之外,捕获的电荷区域还包括除了与介质层的顶表面相邻的区域之外的区域中的电荷。

    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES
    3.
    发明申请
    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES 审中-公开
    执行扫描电容读取的布置和方法

    公开(公告)号:US20130003521A1

    公开(公告)日:2013-01-03

    申请号:US13608878

    申请日:2012-09-10

    IPC分类号: G11B9/02

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译: 读取存储在铁电介质层中的信息的布置,方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层,对应于信息的畴; 具有尖端的探针,其中介质和尖端适于相对于彼此移动,使得尖端扫描介质的铁电畴,同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路,同时扫描与所述区域接触的尖端,所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges
    4.
    发明申请
    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges 有权
    执行铁电位电荷扫描读取的布置和方法

    公开(公告)号:US20090168637A1

    公开(公告)日:2009-07-02

    申请号:US11964580

    申请日:2007-12-26

    IPC分类号: G11B3/00

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译: 读取存储在铁电介质层中的信息的布置,方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层,对应于信息的畴; 具有尖端的探针,其中介质和尖端适于相对于彼此移动,使得尖端扫描介质的铁电畴,同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路,同时扫描与所述区域接触的尖端,所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    Using controlled bias voltage for data retention enhancement in a ferroelectric media
    5.
    发明授权
    Using controlled bias voltage for data retention enhancement in a ferroelectric media 有权
    使用受控偏置电压在铁电介质中进行数据保留增强

    公开(公告)号:US07782649B2

    公开(公告)日:2010-08-24

    申请号:US11961973

    申请日:2007-12-20

    IPC分类号: G11C11/22

    CPC分类号: G11B9/02

    摘要: Using controlled bias voltage for data retention enhancement in a ferroelectric media is generally described. In one example, an apparatus includes a ferroelectric film including one or more domains, the ferroelectric film having a first surface and a second surface, the first surface being opposite the second surface, an electrode coupled with the first surface, and an electrically conductive thin film coupled with the second surface wherein the electrically conductive thin film is sufficiently conductive that a controlled bias field applied between the electrically conductive thin film and the electrode is sufficient to grow, shrink, or actively maintain the size of the one or more domains disposed between the electrically conductive thin film and the electrode.

    摘要翻译: 一般来说,在铁电介质中使用受控偏置电压用于数据保持增强。 在一个示例中,一种装置包括具有一个或多个畴的铁电体膜,所述铁电膜具有第一表面和第二表面,所述第一表面与所述第二表面相对,与所述第一表面耦合的电极和导电薄膜 与第二表面耦合的膜,其中导电薄膜具有足够的导电性,使得施加在导电薄膜和电极之间的受控偏压场足以生长,收缩或主动地保持设置在导电薄膜和电极之间的一个或多个畴的尺寸 导电薄膜和电极。

    USING CONTROLLED BIAS VOLTAGE FOR DATA RETENTION ENHANCEMENT IN A FERROELECTRIC MEDIA
    6.
    发明申请
    USING CONTROLLED BIAS VOLTAGE FOR DATA RETENTION ENHANCEMENT IN A FERROELECTRIC MEDIA 有权
    在电磁介质中使用控制的偏置电压进行数据保持增强

    公开(公告)号:US20090161523A1

    公开(公告)日:2009-06-25

    申请号:US11961973

    申请日:2007-12-20

    IPC分类号: G11B9/00

    CPC分类号: G11B9/02

    摘要: Using controlled bias voltage for data retention enhancement in a ferroelectric media is generally described. In one example, an apparatus includes a ferroelectric film including one or more domains, the ferroelectric film having a first surface and a second surface, the first surface being opposite the second surface, an electrode coupled with the first surface, and an electrically conductive thin film coupled with the second surface wherein the electrically conductive thin film is sufficiently conductive that a controlled bias field applied between the electrically conductive thin film and the electrode is sufficient to grow, shrink, or actively maintain the size of the one or more domains disposed between the electrically conductive thin film and the electrode.

    摘要翻译: 一般来说,在铁电介质中使用受控偏置电压用于数据保持增强。 在一个示例中,一种装置包括具有一个或多个畴的铁电体膜,所述铁电膜具有第一表面和第二表面,所述第一表面与所述第二表面相对,与所述第一表面耦合的电极和导电薄膜 与第二表面耦合的膜,其中导电薄膜具有足够的导电性,使得施加在导电薄膜和电极之间的受控偏压场足以生长,收缩或主动地保持设置在导电薄膜和电极之间的一个或多个畴的尺寸 导电薄膜和电极。

    Data storage medium, data storage device containing same, and method of manufacturing data storage device containing same
    7.
    发明授权
    Data storage medium, data storage device containing same, and method of manufacturing data storage device containing same 有权
    数据存储介质,包含该数据存储介质的数据存储装置,以及包含该数据存储介质的数据存储装置的制造方法

    公开(公告)号:US07952982B2

    公开(公告)日:2011-05-31

    申请号:US12215992

    申请日:2008-06-30

    IPC分类号: G11B9/00

    CPC分类号: G11B9/02 G11B9/065

    摘要: A data storage medium includes a piezoelectric film (101) having a surface (111) including a halogen. In one embodiment, the halogen exists in an atomic concentration of at least approximately 10 percent. The result is a hydrophobic surface conducive to long-lasting scanning probe tips, low contamination, and stable surface charge. A data storage device incorporating the data storage medium includes an enclosure (205) containing the data storage medium and an adjacent scanning probe (230) wherein the enclosure has a relative humidity of at least approximately 40 percent and at least a portion of the scanning probe is coated with a layer of water.

    摘要翻译: 数据存储介质包括具有包括卤素的表面(111)的压电膜(101)。 在一个实施方案中,卤素以至少约10%的原子浓度存在。 其结果是疏水性表面有利于长时间的扫描探针尖端,低污染和稳定的表面电荷。 结合数据存储介质的数据存储设备包括容纳数据存储介质的外壳(205)和相邻的扫描探针(230),其中外壳具有至少大约40%的相对湿度和扫描探针的至少一部分 涂有一层水。

    FBAR device frequency stabilized against temperature drift
    9.
    发明申请
    FBAR device frequency stabilized against temperature drift 审中-公开
    FBAR器件频率稳定,防止温度漂移

    公开(公告)号:US20060001329A1

    公开(公告)日:2006-01-05

    申请号:US10882510

    申请日:2004-06-30

    IPC分类号: H01L41/08

    摘要: A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

    摘要翻译: 薄膜体声波谐振器(FBAR)包括夹在顶部电极和底部电极之间的压电薄膜。 提供温度传感器以感测温度以确定FBAR的温度感应频率漂移。 可操作地连接到温度传感器的电压控制器向FBAR提供直流(DC)偏置电压以引起相反的电压感应频率漂移以补偿温度引起的频率漂移。