公开(公告)号：US20240164118A1

公开(公告)日：2024-05-16

申请号：US18479327

申请日：2023-10-02

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuaki TSUCHIYAMA ,  Tatsuaki TSUKUDA

IPC: H10B80/00 ,  H01L23/00 ,  H01L25/16

CPC classification number: H10B80/00 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/16 ,  H01L2224/05554 ,  H01L2224/06155 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48195 ,  H01L2224/48229 ,  H01L2224/48245 ,  H01L2224/48265 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83095 ,  H01L2224/92147 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106

Abstract: A semiconductor device includes: a base material having a first terminal; a semiconductor chip having a first electrode pad electrically connected with the first terminal, a second electrode pad to which a power supply potential is to be supplied, and a third electrode pad to which a reference potential is to be supplied, and mounted on the base material via a first member; a chip capacitor having a first electrode and a second electrode, and mounted on the semiconductor chip via a second member; a first wire electrically connecting the first electrode pad with the first terminal; a second wire electrically connecting the second electrode pad with the first electrode without going through the base material; and a third wire electrically connecting the third electrode pad with the second electrode without going through the base material.

公开(公告)号：US20200083663A1

公开(公告)日：2020-03-12

申请号：US16544363

申请日：2019-08-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuaki TSUCHIYAMA ,  Motoo SUWA ,  Hidemasa TAKAHASHI

IPC: H01S5/022 ,  H03H7/38 ,  H01S5/042

Abstract: Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.

公开(公告)号：US20190377143A1

公开(公告)日：2019-12-12

申请号：US16410733

申请日：2019-05-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuaki TSUCHIYAMA ,  Motoo SUWA ,  Ryuichi OIKAWA

IPC: G02B6/42 ,  H01S5/042

Abstract: A performance of an electronic device is improved. An optical transceiver (electronic device) includes a semiconductor device electrically connected to a transmission line. In this semiconductor device, a resistor is arranged between a wiring electrically connected to the transmission line and a semiconductor chip having a semiconductor laser formed therein.