公开(公告)号：US11462646B2

公开(公告)日：2022-10-04

申请号：US16822858

申请日：2020-03-18

申请人： Ricoh Company, Ltd.

发明人： Yukiko Abe ,  Yuichi Ando ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/30 ,  G09G3/36 ,  G02B26/00 ,  G02F1/133 ,  G02F1/163 ,  G02F1/167 ,  G02F1/1685 ,  H01L27/32

摘要： A field-effect transistor including a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide is n-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indium oxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.

公开(公告)号：US10565954B2

公开(公告)日：2020-02-18

申请号：US15939665

申请日：2018-03-29

申请人： RICOH COMPANY, LTD.

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

IPC分类号： G09G3/36 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32

摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

公开(公告)号：US11502203B2

公开(公告)日：2022-11-15

申请号：US16495361

申请日：2018-03-22

申请人： Ricoh Company, Ltd.

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi ,  Yuichi Ando

IPC分类号： H01L29/786 ,  C23C22/06 ,  C23C22/82 ,  H01L21/02 ,  H01L29/66 ,  H01L29/861 ,  C23C18/12 ,  C23C18/14

摘要： A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

公开(公告)号：US10923569B2

公开(公告)日：2021-02-16

申请号：US16258814

申请日：2019-01-28

申请人： RICOH COMPANY, LTD.

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： H01L29/24 ,  H01L29/786 ,  C01F5/06 ,  C01F11/04 ,  C01G3/02 ,  G09G3/32 ,  H01L29/04 ,  H01L27/32

摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≤x

公开(公告)号：US10699632B2

公开(公告)日：2020-06-30

申请号：US16257253

申请日：2019-01-25

申请人： RICOH COMPANY, LTD.

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G3/3225 ,  H01L29/49 ,  H01L27/12 ,  G09G5/00 ,  G09G5/10 ,  H01L27/32 ,  H01L29/786

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

公开(公告)号：US10672914B2

公开(公告)日：2020-06-02

申请号：US14908599

申请日：2014-07-25

申请人： RICOH COMPANY, LTD.

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/786 ,  H01L27/12 ,  G09G3/20 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/417 ,  H01L29/45

摘要： To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0×1017 cm−3 or greater.

公开(公告)号：US10403765B2

公开(公告)日：2019-09-03

申请号：US16183223

申请日：2018-11-07

申请人： RICOH COMPANY, LTD.

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G3/34 ,  G09G3/36 ,  G09G3/38 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  G09G3/3233 ,  H01L29/417 ,  H01L29/786

摘要： A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

公开(公告)号：US11901431B2

公开(公告)日：2024-02-13

申请号：US17262515

申请日：2019-07-19

申请人： Ricoh Company, Ltd.

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/02 ,  H01L27/12 ,  H01L29/49 ,  H01L21/445 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H10K59/121

CPC分类号： H01L29/4908 ,  H01L21/02565 ,  H01L21/445 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  G02F1/1368 ,  H10K59/1213

摘要： A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

公开(公告)号：US11342447B2

公开(公告)日：2022-05-24

申请号：US16697770

申请日：2019-11-27

申请人： Ricoh Company, Ltd.

发明人： Yukiko Abe ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L29/66 ,  C23C14/34 ,  H01L21/02

摘要： A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.

公开(公告)号：US10818705B2

公开(公告)日：2020-10-27

申请号：US15457582

申请日：2017-03-13

申请人： RICOH COMPANY, LTD.

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/475 ,  H01L21/4757 ,  H01L29/786 ,  H01L29/66 ,  G09G3/20

摘要： A method for manufacturing a field effect transistor including a gate-insulating layer, an active layer, and a passivation layer. The method includes a first process of forming the gate-insulating layer; and a second process of forming the passivation layer. At least one of the first process and the second process includes: forming a first oxide containing an alkaline earth metal and at least one of gallium, scandium, yttrium, and a lanthanoid; and etching the first oxide by use of a first solution containing at least one of hydrochloric, acid, oxalic acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, and hydrogen peroxide water.