公开(公告)号：US11462646B2

公开(公告)日：2022-10-04

申请号：US16822858

申请日：2020-03-18

申请人： Ricoh Company, Ltd.

发明人： Yukiko Abe ,  Yuichi Ando ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/30 ,  G09G3/36 ,  G02B26/00 ,  G02F1/133 ,  G02F1/163 ,  G02F1/167 ,  G02F1/1685 ,  H01L27/32

摘要： A field-effect transistor including a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide is n-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indium oxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.

公开(公告)号：US10565954B2

公开(公告)日：2020-02-18

申请号：US15939665

申请日：2018-03-29

申请人： RICOH COMPANY, LTD.

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae

IPC分类号： G09G3/36 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32

摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

公开(公告)号：US11908945B2

公开(公告)日：2024-02-20

申请号：US15759698

申请日：2016-09-09

申请人： Ricoh Company, Ltd.

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/861 ,  H01L29/24 ,  H01L29/51

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02628 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78618 ,  H01L21/02581 ,  H01L29/24 ,  H01L29/861

摘要： A coating liquid for forming an n-type oxide semiconductor film, the coating liquid including: a Group A element, which is at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; a Group B element, which is at least one of In and Tl; a Group C element, which is at least one selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 14 elements, Group 15 elements, and Group 16 elements; and a solvent.

公开(公告)号：US20150028334A1

公开(公告)日：2015-01-29

申请号：US14382604

申请日：2013-03-14

申请人： RICOH COMPANY, LTD.

发明人： Shinji Matsumoto ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Mikiko Takada ,  Yuji Sone ,  Ryoichi Saotome

IPC分类号： H01L29/786 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L21/445 ,  H01L23/5328 ,  H01L27/1292 ,  H01L29/45 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.

摘要翻译： 提供导电薄膜，其包含：含有铟和锡的金属氧化物; 和黄金。

公开(公告)号：US11901431B2

公开(公告)日：2024-02-13

申请号：US17262515

申请日：2019-07-19

申请人： Ricoh Company, Ltd.

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/02 ,  H01L27/12 ,  H01L29/49 ,  H01L21/445 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H10K59/121

CPC分类号： H01L29/4908 ,  H01L21/02565 ,  H01L21/445 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  G02F1/1368 ,  H10K59/1213

摘要： A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

公开(公告)号：US11342447B2

公开(公告)日：2022-05-24

申请号：US16697770

申请日：2019-11-27

申请人： Ricoh Company, Ltd.

发明人： Yukiko Abe ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L29/66 ,  C23C14/34 ,  H01L21/02

摘要： A sputtering target for an insulating oxide film, the sputtering target including a sintered body including a lanthanum oxide and at least one selected from the group consisting of a beryllium oxide, a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide, wherein lanthanum has highest molar ratio among elements other than oxygen contained in the sintered body.

公开(公告)号：US10818705B2

公开(公告)日：2020-10-27

申请号：US15457582

申请日：2017-03-13

申请人： RICOH COMPANY, LTD.

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/475 ,  H01L21/4757 ,  H01L29/786 ,  H01L29/66 ,  G09G3/20

摘要： A method for manufacturing a field effect transistor including a gate-insulating layer, an active layer, and a passivation layer. The method includes a first process of forming the gate-insulating layer; and a second process of forming the passivation layer. At least one of the first process and the second process includes: forming a first oxide containing an alkaline earth metal and at least one of gallium, scandium, yttrium, and a lanthanoid; and etching the first oxide by use of a first solution containing at least one of hydrochloric, acid, oxalic acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, and hydrogen peroxide water.

公开(公告)号：US10403234B2

公开(公告)日：2019-09-03

申请号：US15987144

申请日：2018-05-23

申请人： RICOH COMPANY, LTD.

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G5/10 ,  H01L27/12 ,  H01L27/32 ,  G09G3/20

摘要： A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

公开(公告)号：US11502203B2

公开(公告)日：2022-11-15

申请号：US16495361

申请日：2018-03-22

申请人： Ricoh Company, Ltd.

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi ,  Yuichi Ando

IPC分类号： H01L29/786 ,  C23C22/06 ,  C23C22/82 ,  H01L21/02 ,  H01L29/66 ,  H01L29/861 ,  C23C18/12 ,  C23C18/14

摘要： A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

公开(公告)号：US10923569B2

公开(公告)日：2021-02-16

申请号：US16258814

申请日：2019-01-28

申请人： RICOH COMPANY, LTD.

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： H01L29/24 ,  H01L29/786 ,  C01F5/06 ,  C01F11/04 ,  C01G3/02 ,  G09G3/32 ,  H01L29/04 ,  H01L27/32

摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≤x