公开(公告)号：US20200273975A1

公开(公告)日：2020-08-27

申请号：US15930070

申请日：2020-05-12

申请人： ROHM CO., LTD.

发明人： Kenji YAMAMOTO ,  Tetsuya FUJIWARA ,  Minoru AKUTSU ,  Ken NAKAHARA ,  Norikazu ITO

IPC分类号： H01L29/778 ,  H01L29/423 ,  H01L21/76 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/28 ,  H01L29/417 ,  H01L21/265 ,  H01L21/311 ,  H01L29/51

摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

公开(公告)号：US20190207023A1

公开(公告)日：2019-07-04

申请号：US16295777

申请日：2019-03-07

申请人： ROHM CO., LTD.

发明人： Kenji YAMAMOTO ,  Tetsuya FUJIWARA ,  Minoru AKUTSU ,  Ken NAKAHARA ,  Norikazu ITO

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/78 ,  H01L29/423 ,  H01L21/76 ,  H01L21/265 ,  H01L29/66 ,  H01L29/417 ,  H01L21/28 ,  H01L21/306 ,  H01L29/51 ,  H01L21/311

CPC分类号： H01L29/7787 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02694 ,  H01L21/2654 ,  H01L21/26586 ,  H01L21/28264 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/76 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66242 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/78

摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

公开(公告)号：US20170338333A1

公开(公告)日：2017-11-23

申请号：US15672112

申请日：2017-08-08

申请人： ROHM CO., LTD.

发明人： Kenji YAMAMOTO ,  Tetsuya FUJIWARA ,  Minoru AKUTSU ,  Ken NAKAHARA ,  Norikazu ITO

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/66 ,  H01L29/51 ,  H01L29/417 ,  H01L21/311 ,  H01L21/306 ,  H01L21/28 ,  H01L21/265 ,  H01L29/78 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02694 ,  H01L21/2654 ,  H01L21/26586 ,  H01L21/28264 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/76 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66242 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/78

摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.

公开(公告)号：US20130313609A1

公开(公告)日：2013-11-28

申请号：US13899107

申请日：2013-05-21

申请人： ROHM CO., LTD.

发明人： Minoru AKUTSU ,  Tetsuya FUJIWARA

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/78 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/7786

摘要： Provided are a nitride semiconductor device having an excellent boundary between a nitride semiconductor and a gate insulating film, resulting in improved device characteristics, and a manufacturing method therefor. The nitride semiconductor device includes: an electron transport layer made of a nitride semiconductor; an electron supply layer layered on the electron transport layer, the electron supply layer being made of a nitride semiconductor including Al and having an Al composition different from that of the electron transport layer; a source electrode and a drain electrode formed on the electron supply layer with a gap therebetween; a gate insulating film covering the surface of the electron supply layer between the source electrode and the drain electrode; a passivation film covering a surface of the gate insulating film and having an opening between the source electrode and the drain electrode; and a gate electrode having a main gate body in the opening facing the electron supply layer through the gate insulating film.

摘要翻译： 本发明提供一种氮化物半导体与栅极绝缘膜之间具有极好的边界的氮化物半导体器件，从而提高器件特性及其制造方法。 氮化物半导体器件包括：由氮化物半导体制成的电子传输层; 层叠在所述电子传输层上的电子供给层，所述电子供给层由包含Al并且具有不同于所述电子传输层的Al组成的氮化物半导体构成; 形成在电子供给层上的源电极和漏电极，其间具有间隙; 覆盖源电极和漏电极之间的电子供给层的表面的栅极绝缘膜; 覆盖所述栅极绝缘膜的表面并且在所述源电极和所述漏电极之间具有开口的钝化膜; 以及栅电极，所述栅电极通过所述栅极绝缘膜在所述开口中面向所述电子供给层。

公开(公告)号：US20230411508A1

公开(公告)日：2023-12-21

申请号：US18451863

申请日：2023-08-18

申请人： ROHM CO., LTD.

发明人： Kenji YAMAMOTO ,  Tetsuya FUJIWARA ,  Minoru AKUTSU ,  Ken NAKAHARA ,  Norikazu ITO

IPC分类号： H01L29/778 ,  H01L29/423 ,  H01L21/76 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/28 ,  H01L29/417 ,  H01L21/265 ,  H01L21/311 ,  H01L29/51

CPC分类号： H01L29/7787 ,  H01L29/42368 ,  H01L29/4236 ,  H01L21/76 ,  H01L29/66242 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/78 ,  H01L21/02255 ,  H01L21/30621 ,  H01L21/28264 ,  H01L29/41758 ,  H01L29/66522 ,  H01L21/02241 ,  H01L21/0228 ,  H01L21/02694 ,  H01L21/2654 ,  H01L21/26586 ,  H01L21/31116 ,  H01L29/41725 ,  H01L29/51 ,  H01L29/513 ,  H01L29/2003

摘要： A nitride semiconductor device includes an electron transit layer that is formed of a nitride semiconductor, an electron supply layer that is formed on the electron transit layer, and formed of a nitride semiconductor and that has a recess which reaches the electron transit layer from a surface, a thermal oxide film that is formed on the surface of the electron transit layer exposed within the recess, a gate insulating film that is embedded within the recess so as to be in contact with the thermal oxide film, a gate electrode that is formed on the gate insulating film and that is opposite to the electron transit layer across the thermal oxide film and the gate insulating film, and a source electrode and a drain electrode that are provided on the electron supply layer at an interval such that the gate electrode intervenes therebetween.

公开(公告)号：US20210217886A1

公开(公告)日：2021-07-15

申请号：US17212619

申请日：2021-03-25

申请人： ROHM CO., LTD.

发明人： Kenji YAMAMOTO ,  Tetsuya FUJIWARA ,  Minoru AKUTSU ,  Ken NAKAHARA ,  Norikazu ITO

IPC分类号： H01L29/778 ,  H01L29/423 ,  H01L21/76 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/28 ,  H01L29/417 ,  H01L21/265 ,  H01L21/311 ,  H01L29/51

摘要： A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervenes therebetween.