摘要:
A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing process. When the window moves into position between the wafer and a measurement sensor, the window is moved closer to the polishing surface. In this position, at least some polishing agent collected in the recess above the window is removed, and an in-situ measurement can be taken with reduced interference from the polishing agent. After the window is positioned away from the wafer and measurement sensor, the window moves farther away from the wafer and polishing surface. With such a movable window, the limitations of current polishing devices are overcome.
摘要:
A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing process. When the window moves into position between the wafer and a measurement sensor, the window is moved closer to the polishing surface. In this position, at least some polishing agent collected in the recess above the window is removed, and an in-situ measurement can be taken with reduced interference from the polishing agent. After the window is positioned away from the wafer and measurement sensor, the window moves farther away from the wafer and polishing surface. With such a movable window, the limitations of current polishing devices are overcome.
摘要:
A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.
摘要:
Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.
摘要:
A polishing pad includes at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer. The polishing pad may further include a proton exchange membrane placed over the cathodic element. A semiconductor wafer having a metal film thereon may be polished using the polishing pad by placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution. For copper films, a sulfuric acid-copper sulfate solution may be used.
摘要:
A nanospring is formed by first forming a stack of alternating layers of materials which have different susceptibilities to a selective etch solution. The stack is formed over a substrate and is subsequently etched with a substantially non-isotropic etch to create a via having substantially straight sidewalls. The sidewalls of the via are exposed to the selective etch solution, thereby creating irregular sidewalls of the via. A metal film is conformally deposited within the via, and, after excess metal is removed, the stack of alternating layers of materials is etched to expose remaining portions of the conformably deposited film, which comprise the nanospring.
摘要:
Polishing pads of varying compositions for use in chemical mechanical planarization (CMP) and methods of manufacturing and using such pads. Examples of such polishing pads include two phases, one of which may be a high modulus, low wear material that maintains a stable texture when subject to a conditioning process (e.g., polyoxymethylene, Delrin, polyamide-imide (Torlon), polyetheretherketone (PEEK), and/or polysulfone), and the other of which may be a material having a polishing ability (e.g., a polyurethane material).
摘要:
A web-style polishing pad includes a guide layer through which individual polishing elements protrude on one side and a flexible under-layer attached to the other side. The polishing elements may be affixed at their base to the compressible under-layer and pass through corresponding holes in the guide layer so as to be maintained and translatable in a substantially orthogonal orientation with respect to a plane defined by the guide layer.
摘要:
A polishing pad includes a guide plate having a plurality of holes therein and being affixed to a compressible under-layer; and a plurality of conducting polishing elements each affixed to the compressible under-layer and passing through a sealed contact with a proton exchange membrane and corresponding hole in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but being translatable in a vertical direction with respect to the guide plate. The polishing pad may also include a slurry distribution material fastened to the guide plate by an adhesive. Pad wear sensors may also be provided in the polishing pad.
摘要:
A polishing pad for use in chemical mechanical polishing (CMP) is disclosed. The polishing pad has a pad surface for polishing wafer surfaces. The pad surface is composed of a polymeric matrix material. The polishing pad also contains a polymeric additive which is defined in the polymeric matrix of the pad surface and in cells of the pad surface. The polymeric additive may include one of a polyurethane, a polyamide, a polyester, a polyacrylonitrile, a polyacrylate, a polymethacrylate, a polyvinylchloride, and a polyvinylidene chloride. The polymeric additive is configured to be hydrophilic so that the pad surface is wettable to enable improved slurry distribution over the pad surface.