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公开(公告)号：US4827610A
公开(公告)日：1989-05-09
申请号：US91807
申请日：1987-08-31
CPC分类号： H01L24/83 , B23K1/20 , B23K35/224 , H01L23/481 , H01L24/32 , H05K3/0094 , B23K2201/40 , H01L2224/8319 , H01L2224/83801 , H01L2924/01013 , H01L2924/01027 , H01L2924/01074 , H01L2924/014 , H01L2924/10158 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/19043 , H05K2201/0317 , H05K2201/2081 , H05K3/048 , H05K3/3452 , H05K3/4076 , Y10T29/49124 , Y10T29/49144
摘要： A method of preparing a substrate such as a semiconductor chip or ceramic thin film having vias for soldering to a substrate requires that a first metal that is resistive to solder bonding be deposited on the backside of the semiconductor device. The deposited metal is removed from the surface of the semiconductor device, leaving the vias of the semiconductor device having the first metal deposited through them. This technique is useful in any requirement requiring a solder or brazing barrier. That is a photolithographic process in conjunction with a refractory or nonsolderable metal deposit is used to achieve an alloy or solder barrier.
摘要翻译： 制备诸如具有用于焊接到衬底的通孔的半导体芯片或陶瓷薄膜的衬底的方法需要在半导体器件的背面上沉积耐焊接接合的第一金属。 从半导体器件的表面去除沉积的金属，留下通过它们沉积第一金属的半导体器件的通孔。 这种技术在需要焊料或钎焊屏障的任何要求中都是有用的。 这是与难熔或不可焊接的金属沉积物结合使用的光刻工艺来实现合金或焊料屏障。
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公开(公告)号：US5051811A
公开(公告)日：1991-09-24
申请号：US302852
申请日：1989-01-27
CPC分类号： H01L24/83 , B23K1/20 , B23K35/224 , H01L24/32 , H05K3/0094 , H05K3/40 , B23K2201/40 , H01L2224/8319 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01027 , H01L2924/01074 , H01L2924/014 , H01L2924/10158 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H05K2201/0317 , H05K2201/2081 , H05K3/048 , H05K3/3452 , H05K3/4076
摘要： A method of preparing a substrate such as a semiconductor chip or ceramic thin film having vias for soldering to a substrate requires that a first metal that is resistive to solder bonding be deposited on the backside of the semiconductor device. The deposited metal is removed from the surface of the semiconductor device, leaving the vias of the semiconductor device having the first metal deposited through them. This technique is useful in any requirement requiring a solder or brazing barrier. This is, a photolithographic process in conjunction with a refractory or nonsolderable metal deposit is used to achieve an alloy or solder barrier.
摘要翻译： 制备诸如具有用于焊接到衬底的通孔的半导体芯片或陶瓷薄膜的衬底的方法需要在半导体器件的背面上沉积耐焊接接合的第一金属。 从半导体器件的表面去除沉积的金属，留下通过它们沉积第一金属的半导体器件的通孔。 这种技术在需要焊料或钎焊屏障的任何要求中都是有用的。 这是与耐火材料或不可焊接的金属沉积物相结合的光刻工艺被用于实现合金或焊料屏障。
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公开(公告)号：US07344994B2
公开(公告)日：2008-03-18
申请号：US11063108
申请日：2005-02-22
申请人： John W. Krawczyk , Andrew L. McNees , Christopher J. Money , Girish S. Patil , David B. Rhine , Karthik Vaideeswaran
发明人： John W. Krawczyk , Andrew L. McNees , Christopher J. Money , Girish S. Patil , David B. Rhine , Karthik Vaideeswaran
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0332 , B81B2203/0353 , B81C1/00531 , B81C1/00619 , B81C2201/0132 , B81C2201/014 , H01L21/0334 , H01L21/3081 , H01L21/3083
摘要： A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.
摘要翻译： 使用深反应离子蚀刻工艺蚀刻半导体衬底以在衬底中产生通孔或槽（以下称为“槽”）的工艺。 该方法包括将第一层作为第一蚀刻停止材料施加到衬底的背面。 第一层是相对软的蚀刻停止材料。 将第二层施加到衬底的背面上的第一层以提供复合蚀刻停止层。 第二层是相对硬的蚀刻停止材料。 从与衬底的背面相对的一侧蚀刻衬底，以在衬底中提供槽。
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公开(公告)号：US06793462B2
公开(公告)日：2004-09-21
申请号：US10202976
申请日：2002-07-25
IPC分类号： F04B300
摘要： A fluidic pump (108) comprises an electrolyte cavity (110) and a pump outlet (115) fluidically coupled to the electrolyte cavity that are within at least a portion of a fluid guiding structure (105), two electrodes (112, 113) extending from the fluid guiding structure into the electrolyte cavity; and a vapor permeable membrane (120) that prevents an electrolyte (125) in the electrolyte cavity from passing through the pump outlet while allowing gas to flow through the pump outlet.
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5.发明授权Microfluidic devices having embedded metal conductors and methods of fabricating said devices 有权具有嵌入式金属导体的微流体装置和制造所述装置的方法公开(公告)号：US06787339B1
公开(公告)日：2004-09-07
申请号：US09676512
申请日：2000-10-02
申请人： David B. Rhine , Thomas J. Smekal
发明人： David B. Rhine , Thomas J. Smekal
IPC分类号： C12N1300
CPC分类号： B01L3/502707 , B01J2219/00853 , B01J2219/0086 , B01J2219/00862 , B01J2219/00873 , B01L2200/12 , B01L2300/0645 , B01L2300/1805 , B81B1/00
摘要： The present invention provides low cost microfluidic devices having embedded metal conductors. The devices of the invention comprise a electronic component comprising a substrate having a first surface, a layer of electrically-conductive material deposited on a portion of the first substrate surface, a first sublayer of electrically-insulating material deposited on the first substrate surface and on the layer of electrically-conductive material, a second sublayer of electrically-insulating material deposited on the first sublayer of insulating material, and a third sublayer of electrically-insulating material deposited on the layer of dielectric material, and a fluid-handling component having a contoured surface affixed to the electronic component. The devices of the invention are advantageously used for performing electric field lysis and the polymerase chain reaction. The invention further advantageously provides simple, low cost methods for fabricating such microfluidic devices.
摘要翻译： 本发明提供具有嵌入式金属导体的低成本微流体装置。 本发明的装置包括电子部件，其包括具有第一表面的基板，沉积在第一基板表面的一部分上的导电材料层，沉积在第一基板表面上的电绝缘材料的第一子层， 导电材料层，沉积在绝缘材料的第一子层上的电绝缘材料的第二子层和沉积在电介质材料层上的电绝缘材料的第三子层，以及流体处理组件，其具有 轮廓表面贴在电子部件上。 本发明的装置有利地用于进行电场裂解和聚合酶链式反应。 本发明还有利地提供了用于制造这种微流体装置的简单，低成本的方法。
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