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    METHOD AND APPARATUS FOR WAFER CLEANING
    1.
    发明申请
    METHOD AND APPARATUS FOR WAFER CLEANING 审中-公开
    用于清洗的方法和装置

    公开(公告)号：US20090205677A1

    公开(公告)日：2009-08-20

    申请号：US12423760

    申请日：2009-04-14

    申请人： Randhir Thakur ,  Steven Verhaverbeke ,  J. Kelly Truman

    发明人： Randhir Thakur ,  Steven Verhaverbeke ,  J. Kelly Truman

    IPC分类号： B08B3/12

    CPC分类号： H01L21/67051 ,  B08B3/024 ,  B08B3/12

    摘要： A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.

    摘要翻译： 一种单晶片清洁装置，其包括可容纳晶片的可旋转托架，具有第一表面张力的冲洗流体，具有低于第一表面张力的第二表面张力的第二流体，能够将冲洗流体施加到第一表面张力的第一喷嘴 位于所述晶片上的位于所述支架中的第一位置，所述第二喷嘴能够在所述晶片上的第二位置处施加所述第二流体，其中所述第二位置在所述第一位置的内侧，并且所述第一喷嘴和所述第二喷嘴能够跨越 晶片将第一位置和第二位置从晶片中心平移到晶片外边缘。

    Cleaning method and solution for cleaning a wafer in a single wafer process
    2.
    发明授权
    Cleaning method and solution for cleaning a wafer in a single wafer process 失效
    用于在单个晶片工艺中清洁晶片的清洁方法和解决方案

    公开(公告)号：US07449127B2

    公开(公告)日：2008-11-11

    申请号：US11145304

    申请日：2005-06-03

    申请人： Steven Verhaverbeke ,  J. Kelly Truman

    发明人： Steven Verhaverbeke ,  J. Kelly Truman

    IPC分类号： C09K13/00 ,  C08K13/06 ,  H01L21/302

    CPC分类号： H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

    摘要： The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

    摘要翻译： 本发明是一种新颖的清洁方法和用于单晶片清洗工艺的解决方案。 根据本发明，清洗溶液包含氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2），水（H O 2）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 而且本发明还有另一个实施方案，清洗溶液还包括溶解气体，例如H 2。 在本发明的一个具体实施方案中，该溶液通过喷雾或分配在旋转晶片上而被使用。

    Assisted rinsing in a single wafer cleaning process
    5.
    发明授权
    Assisted rinsing in a single wafer cleaning process 失效

    公开(公告)号：US07021319B2

    公开(公告)日：2006-04-04

    申请号：US09892130

    申请日：2001-06-25

    申请人： Steven Verhaverbeke ,  J. Kelly Truman

    发明人： Steven Verhaverbeke ,  J. Kelly Truman

    IPC分类号： B08B7/04 ,  B08B7/02

    CPC分类号： H01L21/67051 ,  B08B3/02 ,  Y10S134/902

    摘要： The present invention is a method of assisting the rinsing of a wafer in a single wafer cleaning apparatus. According to the present invention, after exposing a wafer to a cleaning and/or etching solution, the cleaning or etching solution is removed from the wafer by spinning the wafer and dispensing or spraying DI water onto the wafer as it is spun. The centrifugal force of the spinning wafer enhances the rinsing of the wafer. In order to enhance the rinsing of the wafer, in an embodiment of the present invention a solution having a lower surface tension than water, such as but not limited to isopropyl alcohol (IPA) is dispensed in liquid or vapor form onto the wafer after the DI water.In a specific embodiment of the present invention, the vapor of a solution with a lower surface tension than DI water, such as IPA vapor, is blown on the wafer in order to break up the DI water bulging up at the center of the spinning wafer.In another embodiment of the present invention, a gas such N2, is blown for a short period of time onto the center of the wafer to break up the DI water bulging up at the center of the spinning wafer. In yet another embodiment of the present invention, acoustic or sonic waves are applied to the wafer as it spins in order to help diffuse the DI water from the wafer. And in still yet another embodiment of the present invention, the DI water which is dispensed onto the spinning wafer is heated to a temperature above room temperature and preferably between 60-70° C. to enhance the diffusion of water from the wafer. The low surface tension liquid, acoustic application, gas blowing, and heated DI water can be used alone or in combination with one another into enhance the rinsing of a wafer and thereby decrease the rinsing time of a single wafer process to less than 20 seconds.

    Methods and devices utilizing the ammonium termination of silicon dioxide films
    9.
    发明授权
    Methods and devices utilizing the ammonium termination of silicon dioxide films 失效
    利用二氧化硅薄膜铵终止的方法和装置

    公开(公告)号：US06524940B2

    公开(公告)日：2003-02-25

    申请号：US09843229

    申请日：2001-04-26

    申请人： Steven Verhaverbeke ,  J. Kelly Truman

    发明人： Steven Verhaverbeke ,  J. Kelly Truman

    IPC分类号： H01L2144

    CPC分类号： C23C8/40 ,  C23C8/02 ,  C23C8/10

    摘要： The present invention is a novel termination of silicon dioxide films for use in a single wafer cleaning tool. According to the present invention a silicon dioxide film is formed on a silicon substrate and the film is then terminated with ammonium oxide (—O—NH4). In an embodiment of the present invention the film is terminated by dispensing a mixture containing ammonium oxide onto the film. The present invention also provides a method of forming a gate insulator as well as a gate insulator device.

    摘要翻译： 本发明是用于单个晶片清洁工具中的二氧化硅膜的新型终止。 根据本发明，在硅衬底上形成二氧化硅膜，然后用氧化铵（-O-NH 4）封端。 在本发明的一个实施方案中，通过将含有氧化铵的混合物分配到膜上来终止膜。 本发明还提供一种形成栅极绝缘体的方法以及栅极绝缘体器件。