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公开(公告)号：US20090205677A1
公开(公告)日：2009-08-20
申请号：US12423760
申请日：2009-04-14
IPC分类号： B08B3/12
CPC分类号： H01L21/67051 , B08B3/024 , B08B3/12
摘要： A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.
摘要翻译： 一种单晶片清洁装置，其包括可容纳晶片的可旋转托架，具有第一表面张力的冲洗流体，具有低于第一表面张力的第二表面张力的第二流体，能够将冲洗流体施加到第一表面张力的第一喷嘴 位于所述晶片上的位于所述支架中的第一位置，所述第二喷嘴能够在所述晶片上的第二位置处施加所述第二流体，其中所述第二位置在所述第一位置的内侧，并且所述第一喷嘴和所述第二喷嘴能够跨越 晶片将第一位置和第二位置从晶片中心平移到晶片外边缘。
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2.发明授权公开(公告)号：US07205023B2
公开(公告)日：2007-04-17
申请号：US09891833
申请日：2001-06-25
CPC分类号： B01F15/0454 , Y10T137/87652
摘要： A method of and apparatus for mixing chemicals in a single wafer process. According to the present invention a chemical is fed into a valve system having a tube of a known volume. The chemical is fed into the valve system to fill the tube with a chemical to generate a measured amount of the chemical. The measured amount of chemical is then used in a single wafer process.
摘要翻译： 用于在单个晶片工艺中混合化学品的方法和设备。 根据本发明，化学品被供给到具有已知体积的管的阀系统中。 化学品被送入阀门系统中，用化学品填充管子以产生测量量的化学品。 然后在单个晶片工艺中使用测量的化学物质量。
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公开(公告)号：US07037842B2
公开(公告)日：2006-05-02
申请号：US10637725
申请日：2003-08-07
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/02052 , H01L21/67051 , H01L21/67075 , H01L21/6708 , Y10S438/907
摘要： A method and apparatus for processing a wafer is described. According to the present invention a wafer is placed on a substrate support. A liquid is then fed through a conduit having an output opening over the wafer. A gas is dissolved in the liquid prior to the liquid reaching the output over the wafer by flowing a gas into the conduit through a venturi opening formed in the conduit. The liquid with dissolved gas is then fed through the opening and onto the wafer where it can be used to etch, clean, or rinse a wafer.
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4.发明授权Methods and devices utilizing the ammonium termination of silicon dioxide films 失效利用二氧化硅薄膜铵终止的方法和装置公开(公告)号：US06524940B2
公开(公告)日：2003-02-25
申请号：US09843229
申请日：2001-04-26
IPC分类号： H01L2144
摘要： The present invention is a novel termination of silicon dioxide films for use in a single wafer cleaning tool. According to the present invention a silicon dioxide film is formed on a silicon substrate and the film is then terminated with ammonium oxide (—O—NH4). In an embodiment of the present invention the film is terminated by dispensing a mixture containing ammonium oxide onto the film. The present invention also provides a method of forming a gate insulator as well as a gate insulator device.
摘要翻译： 本发明是用于单个晶片清洁工具中的二氧化硅膜的新型终止。 根据本发明，在硅衬底上形成二氧化硅膜，然后用氧化铵（-O-NH 4）封端。 在本发明的一个实施方案中，通过将含有氧化铵的混合物分配到膜上来终止膜。 本发明还提供一种形成栅极绝缘体的方法以及栅极绝缘体器件。
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公开(公告)号：US20060266389A1
公开(公告)日：2006-11-30
申请号：US11496826
申请日：2006-07-31
申请人： Randhir Thakur , Steven Verhaverbeke , J. Truman
发明人： Randhir Thakur , Steven Verhaverbeke , J. Truman
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , B08B3/024 , B08B3/12
摘要： A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.
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公开(公告)号：US20080286697A1
公开(公告)日：2008-11-20
申请号：US11977913
申请日：2007-10-26
IPC分类号： G03F7/20
CPC分类号： H01L21/67161 , H01L21/67069 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67225
摘要： A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.
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7.发明授权Cleaning method and solution for cleaning a wafer in a single wafer process 失效用于在单个晶片工艺中清洁晶片的清洁方法和解决方案公开(公告)号：US07449127B2
公开(公告)日：2008-11-11
申请号：US11145304
申请日：2005-06-03
IPC分类号： C09K13/00 , C08K13/06 , H01L21/302
CPC分类号： H01L21/02052 , B08B3/08 , C11D1/29 , C11D1/72 , C11D3/044 , C11D3/32 , C11D3/33 , C11D3/3947 , C11D7/06 , C11D7/265 , C11D11/0047 , C23G5/00 , H01L21/67051 , Y10S261/07
摘要： The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.
摘要翻译： 本发明是一种新颖的清洁方法和用于单晶片清洗工艺的解决方案。 根据本发明，清洗溶液包含氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2），水（H O 2）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 而且本发明还有另一个实施方案，清洗溶液还包括溶解气体，例如H 2。 在本发明的一个具体实施方案中，该溶液通过喷雾或分配在旋转晶片上而被使用。
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公开(公告)号：US07159599B2
公开(公告)日：2007-01-09
申请号：US10229446
申请日：2002-08-27
IPC分类号： B08B3/00
CPC分类号： H01L21/67161 , H01L21/67069 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67225
摘要： A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.
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公开(公告)号：US20060260659A1
公开(公告)日：2006-11-23
申请号：US11496936
申请日：2006-07-31
申请人： Steven Verhaverbeke , J. Kelly Truman , Alexander Ko , Rick Endo
发明人： Steven Verhaverbeke , J. Kelly Truman , Alexander Ko , Rick Endo
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/12 , B08B2203/0288 , H01L21/02041 , Y10S134/902
摘要： An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.
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公开(公告)号：US07836901B2
公开(公告)日：2010-11-23
申请号：US11977832
申请日：2007-10-26
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/12 , B08B2203/0288 , Y10S134/902
摘要： An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.
摘要翻译： 一种用于湿处理单个晶片的设备，包括： 用于保持晶片的装置; 用于向晶片的非器件侧提供声能的装置; 以及用于将流体流动到晶片的装置侧的装置。
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