公开(公告)号：US6140221A

公开(公告)日：2000-10-31

申请号：US124603

申请日：1998-07-29

申请人： Rao Venkateswara Annapragada ,  Subhas Bothra

发明人： Rao Venkateswara Annapragada ,  Subhas Bothra

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/02134 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/76831

摘要： A semiconductor device has a device layer, a conductive structure, such as a conductive line, disposed over the device layer, and a porous dielectric layer disposed over the device layer and the conductive structure. At least one via is formed through the porous dielectric layer to the conductive structure with a second dielectric material formed along sidewalls of the via. Often, the porous dielectric layer includes a hydrophobic aerogel material having silicon-hydrogen bonds. One exemplary method of making the semiconductor device includes forming a conductive structure over a device layer of the semiconductor device and then forming a porous dielectric layer over the device layer and the conductive structure. A first via is formed through the porous dielectric layer to the conductive structure. The first via is filled with a second dielectric material that is less porous than the porous dielectric layer and then a second via is formed through the second dielectric material to the conductive structure.

摘要翻译： 半导体器件具有设置在器件层上的器件层，导电结构，例如导线，以及设置在器件层和导电结构上的多孔介电层。 至少一个通孔通过多孔电介质层形成到导电结构，其中第二电介质材料沿通孔的侧壁形成。 通常，多孔介电层包括具有硅 - 氢键的疏水性气凝胶材料。 制造半导体器件的一个示例性方法包括在半导体器件的器件层上形成导电结构，然后在器件层和导电结构上形成多孔介电层。 通过多孔介电层形成第一通孔到导电结构。 第一通孔填充有比多孔电介质层少孔的第二电介质材料，然后通过第二电介质材料形成导电结构的第二通孔。

公开(公告)号：US6048494A

公开(公告)日：2000-04-11

申请号：US16752

申请日：1998-01-30

申请人： Rao Venkateswara Annapragada

发明人： Rao Venkateswara Annapragada

IPC分类号： B01J3/00 ,  B01J3/03 ,  B01J3/04 ,  A61L2/04 ,  A61L2/06

CPC分类号： B01J3/03 ,  B01J3/002 ,  B01J3/04

摘要： An autoclave is disclosed which includes direct heating and improved access. The autoclave includes a heating system which is placed directly into the pressurized chamber such that materials which are placed directly into the autoclave are directly heated. The autoclave includes doors which are disposed inside of the pressure vessel which seal against the inside surface of the pressure vessel upon pressurization. In one embodiment a pivot system is used to hold the door in place when the autoclave is not sufficiently pressurized so as to hold the door against the inside wall of the autoclave. In an alternate embodiment a robotic system is used to hold the door in place when the autoclave is not sufficiently pressurized so as to hold the door against the inside wall of the autoclave. The robotic system is also used to move the door out of the way after depressurization.

摘要翻译： 公开了一种高压灭菌器，其包括直接加热和改进的通路。 高压釜包括直接放置在加压室中的加热系统，使得直接放置在高压釜中的材料被直接加热。 高压灭菌器包括设置在压力容器内部的门，其在加压时密封压力容器的内表面。 在一个实施例中，当高压釜未被充分加压以便将门保持抵靠高压釜的内壁时，枢轴系统用于将门保持在适当位置。 在替代实施例中，当高压釜未被充分加压以将门保持抵靠高压釜的内壁时，机器人系统用于将门保持在适当位置。 机器人系统也用于在减压后将门移开。

公开(公告)号：US06418875B1

公开(公告)日：2002-07-16

申请号：US09902062

申请日：2001-07-09

申请人： Rao Venkateswara Annapragada

发明人： Rao Venkateswara Annapragada

IPC分类号： C23C1600

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76829

摘要： A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

摘要翻译： 一种提高盖氧化物对纳米多孔二氧化硅的粘合性的方法，用于集成电路制造。 在一个实施例中，该方法包括几个步骤。 第一步是在沉积室中接收晶片。 然后在晶片上沉积多孔材料层。 接下来，多孔层的一部分被致密化，以使其与盖层的粘附性更相容。 最后，将覆盖层沉积到多孔层上。

公开(公告)号：US06465365B1

公开(公告)日：2002-10-15

申请号：US09544804

申请日：2000-04-07

申请人： Rao Venkateswara Annapragada

发明人： Rao Venkateswara Annapragada

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76829

摘要： A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

公开(公告)号：US06876063B1

公开(公告)日：2005-04-05

申请号：US09902056

申请日：2001-07-09

申请人： Rao Venkateswara Annapragada

发明人： Rao Venkateswara Annapragada

IPC分类号： H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/58

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76829

摘要： A method of improving adhesion of a cap oxide to nanoporous silica for integrated circuit fabrication. In one embodiment, the method comprises several steps. The first step is to receive a wafer in a deposition chamber. Then a porous layer of material is deposited on the wafer. Next, a portion of the porous layer is densified in order to make it more compatible for adhesion to a cap layer. Finally, a cap layer is deposited onto the porous layer.

摘要翻译： 一种提高盖氧化物对纳米多孔二氧化硅的粘合性的方法，用于集成电路制造。 在一个实施例中，该方法包括几个步骤。 第一步是在沉积室中接收晶片。 然后在晶片上沉积多孔材料层。 接下来，多孔层的一部分被致密化，以使其与盖层的粘附性更相容。 最后，将覆盖层沉积到多孔层上。

公开(公告)号：US06543459B1

公开(公告)日：2003-04-08

申请号：US09544805

申请日：2000-04-07

申请人： Rao Venkateswara Annapragada

发明人： Rao Venkateswara Annapragada

IPC分类号： B08B704

CPC分类号： H01J37/32963 ,  C23C16/4405 ,  Y10S438/905

摘要： A method of determining an end point for a remote microwave plasma cleaning system. In one embodiment, the method comprises several steps. The first step is to expose an electrical device to a deposition operation. Next, the electrical device is exposed to a plasma cleaning operation. In the following step, a value for a performance characteristic of the electrical device is measured. In the last step, an amount of cleaning performed on the electrical device is calculated based on a relationship between a baseline value of the performance characteristic and on the measured value of the performance characteristic of the electrical device.

摘要翻译： 确定远程微波等离子体清洁系统的终点的方法。 在一个实施例中，该方法包括几个步骤。 第一步是将电气设备暴露于沉积操作。 接下来，电气设备暴露于等离子体清洗操作。 在接下来的步骤中，测量电气设备的性能特性的值。 在最后一步中，基于性能特征的基准值与电气设备的性能特性的测量值之间的关系来计算在电气设备上执行的清洁量。

公开(公告)号：US06303525B1

公开(公告)日：2001-10-16

申请号：US09642074

申请日：2000-08-18

申请人： Rao Venkateswara Annapragada

发明人： Rao Venkateswara Annapragada

IPC分类号： H01L21469

CPC分类号： H01L21/02134 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3124 ,  H01L21/76801 ,  H01L21/76834

摘要： A method for depositing a liner dielectric on a semiconductor substrate provides for sufficient adhesion of low dielectric constant spin-on materials among metal layers in sub-micron processes. In an example embodiment, a method for adhering MSQ provides for a liner oxide on an aluminum alloy layer on a semiconductor substrate. First, the substrate is placed into a PECVD environment. A gas mixture of trimethylsilane and N2O is introduced into the PECVD environment at a trimethylsilane-to-N2O ratio of about 1:20 to 1:30. The gas mixture is reacted to deposit an oxide liner of a predetermined thickness. Adjusting the gas mixture trimethylsilane-to-N2O ratio to about 1:3 to 1:7 over the course of about 5 to 20 seconds, and sustaining the reaction thereof, deposits a methyl doped oxide.

摘要翻译： 用于在半导体衬底上沉积衬垫电介质的方法提供了在亚微米工艺中的金属层之间足够的低介电常数旋涂材料的粘附。 在示例性实施例中，用于粘附MSQ的方法在半导体衬底上的铝合金层上提供衬垫氧化物。 首先，将基板放置在PECVD环境中。 三甲基硅烷和N2O的气体混合物以约1:20至1:30的三甲基硅烷与N 2 O的比例引入PECVD环境中。 使气体混合物反应以沉积预定厚度的氧化物衬垫。 在大约5至20秒的时间内将气体混合物三甲基硅烷与N 2 O比调节至约1:3至1:7，并保持其反应，沉积甲基掺杂氧化物。