Semiconductor device and method of making same
    1.
    发明授权
    Semiconductor device and method of making same 失效
    半导体器件及其制造方法

    公开(公告)号:US06448629B2

    公开(公告)日:2002-09-10

    申请号:US09354742

    申请日:1999-07-29

    IPC分类号: H01L2906

    摘要: A second or cap dielectric layer is interposed between the usual or base dielectric layer and the metallic circuitry layer of a semiconductor device. The base dielectric layer has a plurality of recesses in an inactive part of the semiconductor device into which parts of the cap dielectric layer extend to interlock the cap dielectric layer to the base dielectric layer and to oppose shearing or tearing of the either (1) the metallic circuitry layer as the metallic circuitry layer is subjected to chemical-mechanical polishing, or (2) a hard mask layer from the base dielectric layer as the metallic circuitry layer is subjected to chemical-mechanical polishing.

    摘要翻译: 第二或盖电介质层介于通常的或基底电介质层与半导体器件的金属电路层之间。 基极电介质层在半导体器件的非活性部分中具有多个凹部,盖电介质层的部分延伸以将盖电介质层与基底电介质层互锁,并且相对于(1)的剪切或撕裂 金属电路层作为金属电路层进行化学机械抛光,或(2)当金属电路层进行化学机械抛光时,从基极介电层获得硬掩模层。

    DAMASCENE RETICLE AND METHOD OF MANUFACTURE THEREOF
    2.
    发明申请
    DAMASCENE RETICLE AND METHOD OF MANUFACTURE THEREOF 失效
    大理石制品及其制造方法

    公开(公告)号:US20120040277A1

    公开(公告)日:2012-02-16

    申请号:US13278571

    申请日:2011-10-21

    IPC分类号: G03F1/00 B24B41/06

    CPC分类号: G03F1/00 G03F1/26 G03F1/50

    摘要: A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.

    摘要翻译: 用于能够容纳标线的抛光工具的掩模版载体包括具有正面和反面的基板,固定在基板的正面的保持环,形成由刚性基板的正面限定的凹部和内部 固定环的边缘。 掩模垫在凹槽中支撑掩模版。 基板和标线垫具有一组匹配的对准的通孔,用于从底板和标线板之间的空间排出空气,并将空气供给到该空间,因此真空可以将该掩模版保持在适当的位置上 在真空条件下的掩模版载体和在压力下施加空气可以从掩模版载体喷出掩模版。

    DAMASCENE RETICLE AND METHOD OF MANUFACTURE THEREOF
    3.
    发明申请
    DAMASCENE RETICLE AND METHOD OF MANUFACTURE THEREOF 有权
    大理石制品及其制造方法

    公开(公告)号:US20080286660A1

    公开(公告)日:2008-11-20

    申请号:US11749384

    申请日:2007-05-16

    IPC分类号: G03F1/00 C09K3/14

    CPC分类号: G03F1/00 G03F1/26 G03F1/50

    摘要: A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.

    摘要翻译: 光学投影掩模版的制造方法采用镶嵌工艺。 第一特征凹槽被蚀刻到透射或透明的突出掩模掩模板中。 然后,特征凹部用包括用于吸收光化辐射的部分透射材料和/或辐射吸收体的辐射透射率改性材料研磨。 牺牲材料可以在填充凹部之前临时添加到凹部中,以提供与填充凹部的材料并置的间隙。 此后,去除牺牲材料。 然后将投影掩模平坦化,留下填充有透射率改性材料的特征凹部,以及任何期望的间隙。 投影面罩被平坦化,同时保持在用抛光工具和浆料抛光过程中将其固定在位置的夹具中。

    Reticle carrier
    4.
    发明授权
    Reticle carrier 失效
    标线载体

    公开(公告)号:US08439728B2

    公开(公告)日:2013-05-14

    申请号:US13278571

    申请日:2011-10-21

    IPC分类号: B24B41/06

    CPC分类号: G03F1/00 G03F1/26 G03F1/50

    摘要: A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.

    摘要翻译: 用于能够容纳标线的抛光工具的掩模版载体包括具有正面和反面的基板,固定在基板的正面的保持环,形成由刚性基板的正面限定的凹部和内部 固定环的边缘。 掩模垫在凹槽中支撑掩模版。 基板和标线垫具有一组匹配的对准的通孔,用于从底板和标线板之间的空间排出空气,并将空气供给到该空间,因此真空可以将该掩模版保持在适当的位置上 在真空条件下的掩模版载体和在压力下施加空气可以从掩模版载体喷出掩模版。

    Microprocessor having air as a dielectric and encapsulated lines and process for manufacture
    5.
    发明授权
    Microprocessor having air as a dielectric and encapsulated lines and process for manufacture 失效
    具有空气作为电介质的微处理器和封装线及其制造方法

    公开(公告)号:US06268261B1

    公开(公告)日:2001-07-31

    申请号:US09185185

    申请日:1998-11-03

    IPC分类号: H01L2176

    CPC分类号: H01L21/7682 H01L21/764

    摘要: A process for manufacturing a semiconductor circuit. The process comprises creating a plurality of adjacent conductive lines having a solid fill between the conductive lines; creating one or more layers above the lines and the fill; creating one or more pathways to the fill through the layers; and converting the fill to a gas that escapes through the pathways, leaving an air void between adjacent lines. To protect the lines from oxidation during processing, a related process for encapsulating conductive lines in one or more adhesion-promotion barrier layers may be performed. The encapsulation process may also be practiced in conjunction with other semiconductor manufacturing processes. The processes result in a multi-layer semiconductor circuit comprising conductive lines, wherein the lines have air as a dielectric between them, are encapsulated by an adhesion-promotion barrier layer, or both.

    摘要翻译: 一种制造半导体电路的工艺。 该方法包括产生多条相邻的导线,其中导电线之间具有固体填充物; 在线和填充之上创建一个或多个层; 创建通过层的填充的一个或多个途径; 并将填充物转化为通过通道逸出的气体,在相邻管线之间留下空气。 为了在加工过程中保护管线免受氧化,可以执行用于将导电线封装在一个或多个粘附促进阻挡层中的相关方法。 封装过程也可以与其它半导体制造工艺一起实施。 这些处理产生包括导线的多层半导体电路,其中线路之间具有作为电介质的空气,被粘附促进障碍层或二者包围。

    Method of manufacture of damascene reticle
    6.
    发明授权
    Method of manufacture of damascene reticle 有权
    镶嵌光罩的制造方法

    公开(公告)号:US08110321B2

    公开(公告)日:2012-02-07

    申请号:US11749384

    申请日:2007-05-16

    IPC分类号: G03F1/16 B24B5/00

    CPC分类号: G03F1/00 G03F1/26 G03F1/50

    摘要: A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.

    摘要翻译: 光学投影掩模版的制造方法采用镶嵌工艺。 第一特征凹槽被蚀刻到透射或透明的突出掩模掩模板中。 然后,特征凹部用包括用于吸收光化辐射的部分透射材料和/或辐射吸收体的辐射透射率改性材料研磨。 牺牲材料可以在填充凹部之前临时添加到凹部中,以提供与填充凹部的材料并置的间隙。 此后,去除牺牲材料。 然后将投影掩模平坦化,留下填充有透射率改性材料的特征凹部,以及任何期望的间隙。 投影面罩被平坦化,同时保持在用抛光工具和浆料抛光过程中将其固定在位置的夹具中。

    Microprocessor having air as a dielectric and encapsulated lines
    7.
    发明授权
    Microprocessor having air as a dielectric and encapsulated lines 有权
    具有空气作为电介质和封装线的微处理器

    公开(公告)号:US06429522B2

    公开(公告)日:2002-08-06

    申请号:US09742976

    申请日:2000-12-20

    IPC分类号: H01L2348

    CPC分类号: H01L21/7682 H01L21/764

    摘要: A multi-layer semiconductor circuit comprising a plurality of conductive lines having air as a dielectric between the sides of the conductive lines in a first layer and having a structurally supportive non-metal cap layer at least partially covering the top of the conductive lines in the first layer and separating the air dielectric and conductive lines in the first layer from any subsequent layers. In a multi-layer semiconductor circuit with a plurality of conductive lines, at least the top, the bottom, and the opposite sides of each line are encapsulated by an adhesion-promotion barrier layer, and the barrier layer on the top of each conductive line has an upper surface that is flush with (a) a planar lower surface of a cap layer over the barrier layer, (b) a planar upper surface of a dielectric layer between the conductive lines, or (c) a combination thereof. The dielectric layer between the conductive lines may be air.

    摘要翻译: 一种多层半导体电路,包括多个导电线,其在第一层中在导电线的侧面之间具有空气作为电介质,并且具有至少部分地覆盖导电线的顶部的结构上支撑的非金属覆盖层 第一层并且将第一层中的空气电介质和导电线与任何后续层分离。 在具有多个导电线的多层半导体电路中,每条线的至少顶部,底部和相对侧被粘附促进障碍层包围,并且每条导线顶部的阻挡层 具有与阻挡层上的(a)覆盖层的平坦下表面齐平的上表面,(b)导电线之间的介电层的平面上表面,或(c)其组合。 导线之间的电介质层可以是空气。

    Method of forming a patterned organic dielectric layer on a substrate
    8.
    发明授权
    Method of forming a patterned organic dielectric layer on a substrate 失效
    在基板上形成图案化的有机介电层的方法

    公开(公告)号:US06258732B1

    公开(公告)日:2001-07-10

    申请号:US09244936

    申请日:1999-02-04

    IPC分类号: H01L21469

    摘要: An organic dielectric material is patterned on a substrate in a process utilizing a patterned resist which contains a metalloid or metallic element at the time of pattern transfer to the organic dielectric layer. The organic dielectric layer is preferably patterned using an oxygen etching process, most preferably oxygen reactive ion etching. The process advantageously avoids the need for a hard mask.

    摘要翻译: 有机电介质材料在图案转移到有机电介质层时利用包含准金属或金属元素的图案化抗蚀剂的工艺在衬底上图案化。 有机介电层优选使用氧蚀刻工艺,最优选氧反应离子蚀刻来图案化。 该方法有利地避免了对硬掩模的需要。

    Method for producing constant profile sidewalls
    9.
    发明授权
    Method for producing constant profile sidewalls 失效
    制造恒定型材侧壁的方法

    公开(公告)号:US6132940A

    公开(公告)日:2000-10-17

    申请号:US213028

    申请日:1998-12-16

    IPC分类号: G03F7/00 G03F7/20

    摘要: A method of making at least one feature on an object having an upper surface, comprising the steps of:1. applying a layer of a photoresist having an initial thickness to the upper surface;2. exposing the layer of photoresist to a first dosage of light having a first intensity for a first predetermined period of time, such that at least a portion of the upper surface has a thickness that is at most equal to the initial thickness; and3. exposing the layer of photoresist to a second dosage of light having a second intensity for a second predetermined period of time, such that at least a subset of the portion of the upper surface exposed by the first dosage of light is exposed by the second dosage of light.

    摘要翻译: 一种在具有上表面的物体上制造至少一个特征的方法,包括以下步骤:1.将具有初始厚度的光致抗蚀剂层施加到上表面; 2.将光致抗蚀剂层暴露于具有第一强度的第一剂量的光,持续第一预定时间段,使得上表面的至少一部分具有最大等于初始厚度的厚度; 以及3.将所述光致抗蚀剂层暴露于具有第二强度的第二剂量的光,持续第二预定时间段,使得由所述第一剂量的光暴露的所述上表面部分的至少一部分被所述第 第二剂量的光。

    Buried strap for DRAM using junction isolation technique
    10.
    发明授权
    Buried strap for DRAM using junction isolation technique 失效
    使用结隔离技术的DRAM埋地带

    公开(公告)号:US06391703B1

    公开(公告)日:2002-05-21

    申请号:US09894336

    申请日:2001-06-28

    IPC分类号: H01L218242

    CPC分类号: H01L27/10867

    摘要: A logic circuit including an embedded DRAM achieves process integration by simultaneously forming the strap connecting the memory cell capacitor with the pass transistor and a buried dielectric layer isolating the logic transistor sources and drains from the substrate.

    摘要翻译: 包括嵌入式DRAM的逻辑电路通过同时形成将存储单元电容器与传输晶体管连接的带以及将逻辑晶体管源极和漏极与衬底隔离的埋入介质层来实现工艺集成。