公开(公告)号：US20100148203A1

公开(公告)日：2010-06-17

申请号：US12638354

申请日：2009-12-15

申请人： Rei HASHIMOTO ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

发明人： Rei HASHIMOTO ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/507 ,  H01L33/644 ,  H01S5/02292 ,  H01S5/32341

摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.

摘要翻译： 提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形 在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件 荧光体层的。

公开(公告)号：US07985981B2

公开(公告)日：2011-07-26

申请号：US12638354

申请日：2009-12-15

申请人： Rei Hashimoto ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

发明人： Rei Hashimoto ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/58

CPC分类号： H01L33/507 ,  H01L33/644 ,  H01S5/02292 ,  H01S5/32341

摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.

摘要翻译： 提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形 在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件 荧光体层的。

公开(公告)号：US08450918B2

公开(公告)日：2013-05-28

申请号：US12874778

申请日：2010-09-02

申请人： Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

发明人： Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC分类号： F21V9/16 ,  G02B26/00

CPC分类号： G03B21/204 ,  F21K9/232 ,  F21K9/64 ,  H01L33/504

摘要： According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.

摘要翻译： 根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。 发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

公开(公告)号：US08520167B2

公开(公告)日：2013-08-27

申请号：US13038728

申请日：2011-03-02

申请人： Shinji Saito ,  Yasushi Hattori ,  Shinya Nunoue

发明人： Shinji Saito ,  Yasushi Hattori ,  Shinya Nunoue

IPC分类号： G02F1/1335 ,  F21V7/00 ,  F21V11/00

CPC分类号： G02B6/0055 ,  G02B5/0215 ,  G02B5/0231 ,  G02B5/0284 ,  G02B6/0096 ,  G02F1/133606 ,  G02F1/133615

摘要： A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam.

摘要翻译： 实施例的液晶显示装置具有：发射第一激光束的半导体激光二极管; 第一反射单元，被配置为反射第一激光束并形成具有一维扩展分布的第二激光束; 以及第二反射单元，被配置为反射第二激光束并形成具有二维扩散分布的第三激光束。 该装置还具有：使用液晶的光开关，该光开关被配置为控制第三激光束的通过和阻塞; 以及散射第三激光束的第一散射单元。

公开(公告)号：US08354681B2

公开(公告)日：2013-01-15

申请号：US11689246

申请日：2007-03-21

申请人： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

发明人： Yasushi Hattori ,  Shinya Nunoue ,  Shinji Saito ,  Genichi Hatakoshi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/382 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014

摘要： A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

摘要翻译： 一种半导体发光元件，包括具有第一表面和第二表面的半导体衬底，所述第一表面和第二表面面对所述第一表面的相对侧，所述半导体衬底具有形成在所述第一表面中的凹部，所述凹部具有V形十字 形成在所述凹部的内表面上的反射层，形成在所述反射层上的第一电极，形成在所述第二表面上的发光层，以及形成在所述发光层上的第二电极。

公开(公告)号：US08348468B2

公开(公告)日：2013-01-08

申请号：US12876738

申请日：2010-09-07

申请人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

发明人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

IPC分类号： F21V11/02

CPC分类号： F21K9/64 ,  F21K9/232 ,  F21V3/00 ,  F21Y2101/00 ,  F21Y2115/30

摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

摘要翻译： 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。 发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。 在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

公开(公告)号：US20120007113A1

公开(公告)日：2012-01-12

申请号：US13032907

申请日：2011-02-23

申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/26

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

公开(公告)号：US20110216552A1

公开(公告)日：2011-09-08

申请号：US12876738

申请日：2010-09-07

申请人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

发明人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

IPC分类号： F21V8/00 ,  F21V9/16

CPC分类号： F21K9/64 ,  F21K9/232 ,  F21V3/00 ,  F21Y2101/00 ,  F21Y2115/30

摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

摘要翻译： 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。 发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。 在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

公开(公告)号：US08649408B2

公开(公告)日：2014-02-11

申请号：US12874440

申请日：2010-09-02

申请人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/02461

摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

摘要翻译： 根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。 半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及 一对由绝缘体制成的掩埋层，以埋置凹槽。 沟槽的底面随着条纹的距离增加而变浅。

公开(公告)号：US08457167B2

公开(公告)日：2013-06-04

申请号：US12873821

申请日：2010-09-01

申请人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01S5/00

CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。 。