Semiconductor light emitting device and method for manufacturing the same
    3.
    发明授权
    Semiconductor light emitting device and method for manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08461611B2

    公开(公告)日:2013-06-11

    申请号:US13208658

    申请日:2011-08-12

    IPC分类号: H01L33/22

    摘要: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

    摘要翻译: 根据一个实施例,半导体发光器件包括第一半导体层,第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间,并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上,并且具有小于底面与顶面之间的水平差的水平差。

    Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer
    4.
    发明授权
    Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer 有权
    制造半导体发光器件和半导体发光器件晶片的方法

    公开(公告)号:US09006013B2

    公开(公告)日:2015-04-14

    申请号:US13405634

    申请日:2012-02-27

    摘要: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.

    摘要翻译: 根据一个实施例,公开了一种用于制造半导体发光器件的方法。 该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层,将氮化物层接合到第二衬底,并且通过用光照射氮化物层将第一衬底与氮化物层分离。 形成氮化物层包括在凹凸的凹陷内的空间中留下空腔,同时在凹陷上形成薄膜。 该膜包括与氮化物层的一部分相同的材料。 分离包括使膜吸收部分光,使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER
    5.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER 有权
    制造半导体发光器件和半导体发光器件的方法

    公开(公告)号:US20120319161A1

    公开(公告)日:2012-12-20

    申请号:US13405634

    申请日:2012-02-27

    IPC分类号: H01L33/02

    摘要: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.

    摘要翻译: 根据一个实施例,公开了一种用于制造半导体发光器件的方法。 该方法可以包括在具有不平坦度的第一衬底上形成包括发光层的氮化物半导体层,将氮化物层接合到第二衬底,并且通过用光照射氮化物层将第一衬底与氮化物层分离。 形成氮化物层包括在凹凸的凹陷内的空间中留下空腔,同时在凹陷上形成薄膜。 该膜包括与氮化物层的一部分相同的材料。 分离包括使膜吸收部分光,使得施加到面向凹陷的氮化物层的一部分的光的强度低于施加到面对凹凸的突出部的部分的光的强度。

    Semiconductor light emitting device and method for manufacturing same
    8.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08816367B2

    公开(公告)日:2014-08-26

    申请号:US13727147

    申请日:2012-12-26

    IPC分类号: H01L33/22

    摘要: According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions.

    摘要翻译: 根据一个实施例,半导体发光器件包括第一和第二电极,第一和第二半导体层以及发光层。 第一电极包括第一区域,第二区域和设置在它们之间的第三区域。 第一半导体层包括第一区域上的第一部分和第二区域上的第二部分。 发光层包括第一部分上的第三部分和第二部分上的第四部分。 第二半导体层包括第三部分上的第五部分和第四部分上的第六部分。 绝缘层设置在第三区域上的第一和第二部分之间以及第三和第四部分之间。 第二电极包括设置在绝缘层上的第七部分,与第五和第六部分的侧表面接触的第八和第九部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20130328055A1

    公开(公告)日:2013-12-12

    申请号:US13724007

    申请日:2012-12-21

    IPC分类号: H01L33/40

    摘要: According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer.

    摘要翻译: 根据一个实施例,半导体发光器件包括第一和第二电极,第一,第二和第三半导体层以及发光层。 第一导电类型的第一半导体层设置在第一电极上。 发光层设置在第一半导体层上。 第二导电类型的第二半导体层设置在发光层上。 具有低杂质浓度的第三半导体层设置在第二半导体层的一部分上。 第二电极包括焊盘部分和窄线部分。 焊盘部设置在第三半导体层上。 窄线部分从焊盘部分延伸出并且包括沿垂直于堆叠方向的平面延伸的延伸部分。 窄线部分与第二半导体层接触。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20130328075A1

    公开(公告)日:2013-12-12

    申请号:US13727147

    申请日:2012-12-26

    IPC分类号: H01L33/22

    摘要: According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions.

    摘要翻译: 根据一个实施例,半导体发光器件包括第一和第二电极,第一和第二半导体层以及发光层。 第一电极包括第一区域,第二区域和设置在它们之间的第三区域。 第一半导体层包括第一区域上的第一部分和第二区域上的第二部分。 发光层包括第一部分上的第三部分和第二部分上的第四部分。 第二半导体层包括第三部分上的第五部分和第四部分上的第六部分。 绝缘层设置在第三区域上的第一和第二部分之间以及第三和第四部分之间。 第二电极包括设置在绝缘层上的第七部分,与第五和第六部分的侧表面接触的第八和第九部分。