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    Method for fabricating an infrared-emitting light-emitting diode
    1.
    发明授权
    Method for fabricating an infrared-emitting light-emitting diode 失效
    制造红外发光二极管的方法

    公开(公告)号：US06440765B1

    公开(公告)日：2002-08-27

    申请号：US09246747

    申请日：1999-02-08

    申请人： Reinhard Sedlmeier ,  Ernst Nirschl ,  Norbert Stath

    发明人： Reinhard Sedlmeier ,  Ernst Nirschl ,  Norbert Stath

    IPC分类号： H01L2100

    CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L33/02

    摘要： A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover layer, a GaAs and/or AlGaAs containing active layer and a second AlGaAs cover layer. In which case, the first AlGaAs cover layer and the active layer are fabricated by a metal organic vapor phase epitaxy (MOVPE) method and the second AlGaAs cover layer is fabricated by a liquid phase epitaxy (LPE) method. Furthermore, an electrically conductive coupling-out layer having a thickness of at least about 10 &mgr;m is deposited on the second AlGaAs cover layer by the LPE method. The coupling-out layer is optically transparent in the infrared spectral region.

    摘要翻译： 一种制造其中将层序施加到优选由GaAs构成的半导体衬底上的红外发射二极管的方法。 该层序列具有从半导体衬底开始的第一AlGaAs覆盖层，包含GaAs和/或AlGaAs的有源层和第二AlGaAs覆盖层。 在这种情况下，通过金属有机气相外延（MOVPE）方法制造第一AlGaAs覆盖层和有源层，并且通过液相外延（LPE）方法制造第二AlGaAs覆盖层。 此外，通过LPE方法在第二AlGaAs覆盖层上沉积具有至少约10μm厚度的导电耦合出层。 耦合输出层在红外光谱区域是光学透明的。

    Process for producing a semiconductor device with a roughened semiconductor surface
    2.
    发明授权
    Process for producing a semiconductor device with a roughened semiconductor surface 有权
    用于生产具有粗糙化的半导体表面的半导体器件的工艺

    公开(公告)号：US06309953B1

    公开(公告)日：2001-10-30

    申请号：US09517299

    申请日：2000-03-02

    申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    IPC分类号： H01L2128

    CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/00

    摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an AlxGa1−xAs layer with an upper surface, where x≦0.40; applying a contact metallization made of a non-noble metallic material to the AlxGa1−xAs layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the AlxGa1−xAs layer by etching with an etching mixture of hydrogen peroxide ≧30% and hydrofluoric acid ≧40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0≦x≦1 and the upper surface of the AlxGa1−xAs layer is roughened by etching with nitric acid 65% at temperatures of between 0° C. and 30° C.

    摘要翻译： 制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <= 0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> = 30％和氢氟酸≥40％（1000:6）的蚀刻混合物蚀刻1至2.5分钟来使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。

    Process for producing a semiconductor device with a roughened semiconductor surface
    3.
    发明授权
    Process for producing a semiconductor device with a roughened semiconductor surface 失效
    用于生产具有粗糙化的半导体表面的半导体器件的工艺

    公开(公告)号：US6140248A

    公开(公告)日：2000-10-31

    申请号：US918251

    申请日：1997-08-25

    申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    IPC分类号： H01L29/06 ,  H01L33/22 ,  H01L33/40 ,  H01L21/302

    CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157

    摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.

    摘要翻译： 一种制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> 30％和氢氟酸≥40％（1000:6）的蚀刻混合物进行1〜2.5分钟的时间，使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。