公开(公告)号：US20230326907A1

公开(公告)日：2023-10-12

申请号：US18296433

申请日：2023-04-06

申请人： Nexperia Technology (Shanghai) Ltd. ,  NEXPERIA B.V.

发明人： Wei Gong ,  Chunlin Zhu ,  Ke Jiang

IPC分类号： H01L25/07 ,  H01L23/00 ,  H01L23/498 ,  H01L23/34

CPC分类号： H01L25/072 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L23/49838 ,  H01L23/49811 ,  H01L23/34 ,  H01L2224/06181 ,  H01L2224/0603 ,  H01L2224/37011 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/49111 ,  H01L2224/48227 ,  H01L2224/73221 ,  H01L2924/13055 ,  H01L2924/10272 ,  H01L2924/1033

摘要： A package structure for a power semiconductor device is provided, including: a substrate; two or more semiconductor dies on the substrate, each of the semiconductor dies includes a first power switching pad, a second power switching pad and a gate; a gate control conductive trace, a first power switching contact and a second power switching contact are further arranged on the substrate, the gate control conductive trace is connected to each of the semiconductor dies via a bonding component, and the bonding component connecting a first semiconductor die to the gate control conductive trace is sandwiched between circuit lines formed by connecting the second power switching pads of the first semiconductor die and the neighboring second semiconductor die, to second power switching contact of the substrate.

公开(公告)号：US11735505B2

公开(公告)日：2023-08-22

申请号：US17316157

申请日：2021-05-10

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hidetoshi Kuraya ,  Satoshi Hattori ,  Kyo Tanabiki

IPC分类号： H01L23/49 ,  H01L23/495 ,  H01L23/00 ,  H01L21/48 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L23/495 ,  H01L21/4842 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/49 ,  H01L24/744 ,  H01L24/77 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/49513 ,  H01L24/32 ,  H01L2224/29101 ,  H01L2224/29118 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/73263 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/84138 ,  H01L2224/84345 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2224/92246 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/37147 ,  H01L2924/00014 ,  H01L2224/29118 ,  H01L2924/01047 ,  H01L2224/29118 ,  H01L2924/0105

摘要： According to one embodiment, a semiconductor device includes a semiconductor chip, first and second conductive members, a first connection member, and a resin portion. The first conductive member includes first and second portions. The second portion is electrically connected to the semiconductor chip. A direction from the semiconductor chip toward the second portion is aligned with a first direction. A direction from the second portion toward the first portion is aligned with a second direction crossing the first direction. The second conductive member includes a third portion. The first connection member is provided between the first and third portion. The first connection member is conductive. The resin portion includes a first partial region. The first partial region is provided around the first and third portions, and the first connection member. The first portion has a first surface opposing the first connection member and including a recess and a protrusion.

公开(公告)号：US11715676B2

公开(公告)日：2023-08-01

申请号：US17155248

申请日：2021-01-22

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Kenji Nishikawa

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L23/49524 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49513 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/84 ,  H01L2224/37011 ,  H01L2224/40245 ,  H01L2224/84815

摘要： A packaged electronic device includes a substrate comprising a die pad and a lead spaced apart from the die. An electronic device is attached to the die pad top side. A conductive clip is connected to the substrate and the electronic device, and the conductive clip comprises a plate portion attached to the device top side with a conductive material, a clip connecting portion connected to the plate portion and the lead, and channels disposed to extend inward from a lower side of the plate portion above the device top side. The conductive material is disposed within the channels. In another example, the plate portion comprises a lower side having a first sloped profile in a first cross-sectional view such that an outer section of the first sloped profile towards a first edge portion of the plate portion is spaced away from the electronic device further than an inner section of the first sloped profile towards a central portion of the plate portion. Other examples and related methods are also disclosed herein.

公开(公告)号：US20180182730A1

公开(公告)日：2018-06-28

申请号：US15389974

申请日：2016-12-23

申请人： Infineon Technologies Americas Corp.

发明人： Eung San Cho

IPC分类号： H01L23/00 ,  H01L25/07 ,  H01L27/088 ,  H01L29/78 ,  H01L25/065 ,  H01L25/00 ,  H02P27/06

CPC分类号： H01L24/40 ,  H01L23/492 ,  H01L23/5386 ,  H01L24/84 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/50 ,  H01L27/088 ,  H01L29/7827 ,  H01L2224/37011 ,  H01L2224/40137 ,  H01L2224/40225 ,  H01L2924/13055 ,  H01L2924/13081 ,  H01L2924/13091 ,  H01L2924/1426 ,  H02P27/06

摘要： A semiconductor device package includes a conductive clip that has a recess and that is configured to mount to a substrate along a first surface and a second surface that bound the recess, and that includes at least two vertical channel transistors that are of a same type and that are mounted within the recess in a same orientation such that a drain or source contact is coupled to the conductive clip, and such that a gate contact and a source or drain contact extend exposed within the recess and along a same long axis of the conductive clip.

公开(公告)号：US09837380B2

公开(公告)日：2017-12-05

申请号：US14165720

申请日：2014-01-28

申请人： Infineon Technologies Austria AG

发明人： Tian San Tan ,  Theng Chao Long

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L25/00 ,  H01R4/00 ,  H01L25/07 ,  H01L23/433 ,  H01L23/495

CPC分类号： H01L25/0655 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/38 ,  H01L24/40 ,  H01L24/48 ,  H01L24/70 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/89 ,  H01L24/97 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05554 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37026 ,  H01L2224/3719 ,  H01L2224/40227 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83143 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/83855 ,  H01L2224/84143 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/84825 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/84855 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1425 ,  H01L2924/14252 ,  H01L2924/14253 ,  H01L2924/181 ,  H01R4/00 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/83 ,  H01L2224/84

摘要： A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.

公开(公告)号：US20170250126A1

公开(公告)日：2017-08-31

申请号：US15352393

申请日：2016-11-15

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Gregory Thomas Ostrowicki

IPC分类号： H01L23/495 ,  H01L25/07 ,  H01L23/00

CPC分类号： H01L23/49575 ,  H01L23/3121 ,  H01L23/492 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L25/074 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/73213 ,  H01L2224/73263 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00014

摘要： A power converter (300) has a first transistor chip (310) conductively stacked on top of a second transistor chip (320) attached to a substrate (301). A first metallic clip (360) has a plate portion (360a) and a ridge portion (360c) bent at an angle from the plate portion. The plate portion is attached to the terminal of the first transistor chip opposite the second transistor chip. The ridge portion extends to the substrate is and is configured as a plurality of parallel straight fingers (360d). Each finger is discretely attached to the substrate using attachment material (361), for instance solder, and operable as a spring-line cantilever to accommodate, under a force lying in the plane of the substrate, elastic elongation based upon inherent material characteristics.

公开(公告)号：US09673118B2

公开(公告)日：2017-06-06

申请号：US15038590

申请日：2014-07-31

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Masaki Taya

IPC分类号： H01L23/02 ,  H01L23/053 ,  H01L25/07 ,  H01L25/18 ,  H01L23/373 ,  H01L23/498 ,  H01L21/48 ,  H01L23/29 ,  H01L23/31 ,  H01L23/535 ,  H01L23/24 ,  H01L23/00

CPC分类号： H01L23/053 ,  H01L21/4853 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3142 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49844 ,  H01L23/535 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/84 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/32227 ,  H01L2224/35847 ,  H01L2224/37005 ,  H01L2224/37011 ,  H01L2224/37012 ,  H01L2224/37032 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/40245 ,  H01L2224/4046 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48245 ,  H01L2224/73263 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84205 ,  H01L2224/84447 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/35121 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2924/2076

摘要： A power module providing an improved manufacture yield and having an ensured stable joint strength and accordingly improved reliability is provided. The power module includes: a base portion having one surface on which an electrode portion is formed; a conductor portion disposed to face the one surface of the base portion on which the electrode portion is formed, for making electrical connection with the outside; and an interconnect portion connected to the electrode portion formed on the one surface of the base portion and to the surface of the conductor portion facing the one surface of the base portion for electrically connecting the electrode portion to the conductor portion.

公开(公告)号：US09633967B2

公开(公告)日：2017-04-25

申请号：US14910355

申请日：2014-10-06

申请人： NSK Ltd.

发明人： Takashi Sunaga ,  Noboru Kaneko ,  Osamu Miyoshi ,  Ryoichi Suzuki

IPC分类号： H01L29/66 ,  H01L27/08 ,  H01L23/00 ,  H01L25/07 ,  H01L25/18 ,  H01L23/373 ,  H01L23/498 ,  H01L23/492 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L24/41 ,  H01L23/3735 ,  H01L23/492 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L29/7393 ,  H01L29/78 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/29101 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/35847 ,  H01L2224/3701 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37611 ,  H01L2224/4001 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/4099 ,  H01L2224/4112 ,  H01L2224/73263 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84138 ,  H01L2224/8421 ,  H01L2224/84424 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/9221 ,  H01L2924/00015 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/19105 ,  H01L2924/35121 ,  H01L2924/365 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/48 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/00013

摘要： To provide a semiconductor module that has high reliability of electric connection by a solder and is inexpensive. A joint surface of an electrode jointing portion that is opposed to a surface to be jointed of a gate electrode of a bare-chip FET and a joint surface of a substrate jointing portion that is opposed to a surface to be jointed of another wiring pattern include an outgas releasing mechanism that makes outgas generated from a molten solder during solder jointing of a metal plate connector be released from solders interposed between the joint surfaces and the surfaces to be jointed.

公开(公告)号：US09496208B1

公开(公告)日：2016-11-15

申请号：US15053453

申请日：2016-02-25

申请人： Texas Instruments Incorporated

发明人： Gregory Thomas Ostrowicki

IPC分类号： H01L23/495 ,  H01L25/07 ,  H01L23/00

CPC分类号： H01L23/49575 ,  H01L23/3121 ,  H01L23/492 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L25/074 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/73213 ,  H01L2224/73263 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00014

摘要： A power converter (300) has a first transistor chip (310) conductively stacked on top of a second transistor chip (320) attached to a substrate (301). A first metallic clip (360) has a plate portion (360a) and a ridge portion (360c) bent at an angle from the plate portion. The plate portion is attached to the terminal of the first transistor chip opposite the second transistor chip. The ridge portion extends to the substrate is and is configured as a plurality of parallel straight fingers (360d). Each finger is discretely attached to the substrate using attachment material (361), for instance solder, and operable as a spring-line cantilever to accommodate, under a force lying in the plane of the substrate, elastic elongation based upon inherent material characteristics.

摘要翻译： 电源转换器（300）具有导电地堆叠在附接到衬底（301）的第二晶体管芯片（320）的顶部上的第一晶体管芯片（310）。 第一金属夹（360）具有从板部弯曲成一定角度的板部（360a）和脊部（360c）。 板部附接到与第二晶体管芯片相对的第一晶体管芯片的端子。 延伸到基板的脊部被构造成多个平行的直指（360d）。 每个手指使用附接材料（361）离散地附接到基底，例如焊料，并且可用作弹簧线悬臂，以在位于基底平面内的力下容纳基于固有材料特性的弹性伸长。

公开(公告)号：US20160315032A1

公开(公告)日：2016-10-27

申请号：US15204117

申请日：2016-07-07

申请人： Semiconductor Components Industries, LLC

发明人： Roger M. Arbuthnot ,  Stephen St. Germain

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L23/49513 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/492 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/67 ,  H01L24/73 ,  H01L24/83 ,  H01L24/89 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/33181 ,  H01L2224/37011 ,  H01L2224/37012 ,  H01L2224/40245 ,  H01L2224/40499 ,  H01L2224/4103 ,  H01L2224/45015 ,  H01L2224/48247 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/207 ,  H01L2224/37099

摘要： In one embodiment, methods for making semiconductor devices are disclosed.