公开(公告)号：US09536821B2

公开(公告)日：2017-01-03

申请号：US14666602

申请日：2015-03-24

Applicant: Renesas Electronics Corporation

Inventor： Takuro Homma ,  Katsuhiko Hotta ,  Takashi Moriyama

IPC: H01L23/48 ,  H01L23/50 ,  H01L21/66 ,  H01L23/31 ,  H01L23/00 ,  H01L23/482

CPC classification number: H01L23/50 ,  H01L22/32 ,  H01L23/3192 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

Abstract translation: 在制造LSI或半导体集成电路器件时，组装器件（如树脂密封步骤）的步骤通常在高温（例如85〜130℃）的环境中进行电压施加试验， 高湿度（例如约80％RH）。 已经发现，在测试中施加正电压的铝基焊盘的上表面边缘部分处，从上膜分离氮化钛抗反射膜和在氮化钛膜中产生裂纹 通过由于通过密封树脂等的水分引起的电化学反应，以产生氮化钛膜的氧化和膨胀。 这些问题通过在铝基焊盘的周边区域以环或狭缝形状移除焊盘上的氮化钛膜来解决。

公开(公告)号：US10181450B2

公开(公告)日：2019-01-15

申请号：US15421461

申请日：2017-02-01

Applicant: Renesas Electronics Corporation

Inventor： Seiya Isozaki ,  Takashi Moriyama ,  Takehiko Maeda

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/495

Abstract: A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.