GaN-based Schottky barrier diode with field plate
    1.
    发明授权
    GaN-based Schottky barrier diode with field plate 有权
    具有场板的GaN基肖特基势垒二极管

    公开(公告)号:US08643134B2

    公开(公告)日:2014-02-04

    申请号:US13300028

    申请日:2011-11-18

    IPC分类号: H01L29/47

    摘要: A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.

    摘要翻译: 一种制造III族氮化物半导体器件的方法包括提供具有第一表面和与第一表面相对的第二表面的III族氮化物衬底,形成耦合到III族氮化物衬底的第一表面的III族氮化物外延层,以及 去除所述III族氮化物外延层的至少一部分以形成第一暴露表面。 该方法还包括形成耦合到第一暴露表面的电介质层,去除电介质层的至少一部分,以及形成耦合到电介质层的剩余部分的金属层,使得电介质层的剩余部分被布置 在III族氮化物外延层和金属层之间。

    Method and system for a GAN vertical JFET utilizing a regrown gate
    5.
    发明授权
    Method and system for a GAN vertical JFET utilizing a regrown gate 有权
    使用再生栅的GAN垂直JFET的方法和系统

    公开(公告)号:US09184305B2

    公开(公告)日:2015-11-10

    申请号:US13198655

    申请日:2011-08-04

    摘要: A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译: 垂直III族氮化物场效应晶体管包括:包含第一III族氮化物材料的漏极,与漏极电耦合的漏极接触点;以及漂移区域,包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区,该沟道区包括耦合到漂移区的第三III族氮化物材料,至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。 沟道区域沿着垂直方向设置在漏极和源极之间,使得垂直III族氮化物场效应晶体管的工作期间的电流沿着垂直方向。

    METHOD OF FABRICATING A GAN MERGED P-I-N SCHOTTKY (MPS) DIODE
    9.
    发明申请
    METHOD OF FABRICATING A GAN MERGED P-I-N SCHOTTKY (MPS) DIODE 有权
    制备GAN MERGED P-I-N肖特基(MPS)二极体的方法

    公开(公告)号:US20130087878A1

    公开(公告)日:2013-04-11

    申请号:US13270625

    申请日:2011-10-11

    IPC分类号: H01L29/47 H01L21/20

    摘要: A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region.

    摘要翻译: 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括III族氮化物外延结构,其包括耦合到III族氮化物衬底的第一侧的第一III族氮化物外延层和多个第二导电类型的III族氮化物区域。 多个III族氮化物区域在多个III族氮化物区域中的每一个之间具有至少一个第一导电类型的III族氮化物外延区域。 半导体结构还包括电耦合到多个III族氮化物区域和至少一个III族氮化物外延区域中的一个或多个的第一金属结构。 在第一金属结构和至少一个III族氮化物外延区之间产生肖特基接触。