公开(公告)号：US06774476B2

公开(公告)日：2004-08-10

申请号：US10220085

申请日：2002-12-04

申请人： Richard Spitz ,  Alfred Goerlach ,  Alexander Wallrauch ,  Christoph Ruf ,  Peter Urbach ,  Uwe Knappenberger

发明人： Richard Spitz ,  Alfred Goerlach ,  Alexander Wallrauch ,  Christoph Ruf ,  Peter Urbach ,  Uwe Knappenberger

IPC分类号： H01L2302

CPC分类号： H01L25/071 ,  H01L2924/0002 ,  H01L2924/00

摘要： A power converter having at least two semiconductor substrates is provided. Each of the substrates has at least two contact surfaces, and the converter also has two thermally conductive mounting plates carrying the semiconductor substrates, which each have an electrical terminal, an attachment arrangement implemented on one of the mounting plates, and having at least one third electrical terminal, which is distinguished in that the mounting plates and the semiconductor substrates form stacks, the mounting plates receiving the semiconductor substrates between themselves, and an electrically and thermally conductive insert, which has at least the third terminal, is arranged between the semiconductor substrates.

摘要翻译： 提供具有至少两个半导体衬底的功率转换器。 每个基板具有至少两个接触表面，并且转换器还具有承载半导体基板的两个导热安装板，每个具有电端子，在其中一个安装板上实现的附接布置，并且具有至少一个第三 电端子的特征在于安装板和半导体基板形成堆叠，在它们之间接收半导体衬底的安装板和至少具有第三端子的导电和导热插入件布置在半导体衬底之间 。

公开(公告)号：US20090206438A1

公开(公告)日：2009-08-20

申请号：US11664857

申请日：2005-09-12

申请人： Peter Flohrs ,  Alfred Goerlach ,  Peter Urbach ,  Wolfgang Feiler ,  Ning Qu ,  Klaus Heyers

发明人： Peter Flohrs ,  Alfred Goerlach ,  Peter Urbach ,  Wolfgang Feiler ,  Ning Qu ,  Klaus Heyers

IPC分类号： H01L29/66 ,  H01L21/24 ,  H01L21/50

CPC分类号： H01L28/20 ,  G01K7/22 ,  H01L27/0802 ,  H01L29/8605 ,  H01L29/8611

摘要： A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

摘要翻译： 一种半导体元件及其制造方法，该半导体元件具有很大程度上取决于温度的电阻特性。 该电阻特性通过半导体元件的特殊的多层结构获得，一层被设计成例如在n掺杂区域中存在多个p掺杂区域，所述区域被短路 在一侧通过金属镀层。 例如，半导体组件可以用于通过集成到导体中来减小电流峰值。 在冷态中，当由于流动电流而加热半导体元件时，半导体元件具有高电阻，其变得明显较低。

公开(公告)号：US20130329476A1

公开(公告)日：2013-12-12

申请号：US13990334

申请日：2011-10-20

申请人： Richard Spitz ,  Alfred Goerlach ,  Carolin Tolksdorf

发明人： Richard Spitz ,  Alfred Goerlach ,  Carolin Tolksdorf

IPC分类号： H02M7/219

CPC分类号： H02M7/219 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/51 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.

摘要翻译： 用于机动车辆的电压供给的发电机装置配备有至少一个整流元件，用于整流由发电机提供的交流电压。 整流元件具有n沟道MOS场效应晶体管，其中栅极，主体区域和源极区域彼此电连接并且漏极区域用作阴极。

公开(公告)号：US08072043B2

公开(公告)日：2011-12-06

申请号：US11664857

申请日：2005-09-12

申请人： Peter Flohrs ,  Alfred Goerlach ,  Peter Urbach ,  Wolfgang Feiler ,  Ning Qu ,  Klaus Heyers

发明人： Peter Flohrs ,  Alfred Goerlach ,  Peter Urbach ,  Wolfgang Feiler ,  Ning Qu ,  Klaus Heyers

IPC分类号： H01L29/00

CPC分类号： H01L28/20 ,  G01K7/22 ,  H01L27/0802 ,  H01L29/8605 ,  H01L29/8611

摘要： A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

摘要翻译： 一种半导体元件及其制造方法，该半导体元件具有很大程度上取决于温度的电阻特性。 该电阻特性通过半导体元件的特殊的多层结构获得，一层被设计成例如在n掺杂区域中存在多个p掺杂区域，所述区域被短路 在一侧通过金属镀层。 例如，半导体组件可以用于通过集成到导体中来减小电流峰值。 在冷态中，当由于流动电流而加热半导体元件时，半导体元件具有高电阻，其变得明显较低。

公开(公告)号：US08900925B2

公开(公告)日：2014-12-02

申请号：US13921362

申请日：2013-06-19

申请人： Richard Spitz ,  Alfred Goerlach ,  Robert Kolb

发明人： Richard Spitz ,  Alfred Goerlach ,  Robert Kolb

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/00 ,  H01L21/76 ,  H01L21/30 ,  H01L21/46 ,  H01L21/78 ,  H01L21/301 ,  H01L29/861 ,  H01L29/66 ,  H01L29/32

CPC分类号： H01L29/6609 ,  H01L29/32 ,  H01L29/66136 ,  H01L29/861

摘要： In a method for manufacturing a diode, a semiconductor crystal wafer is used to produce a p-n or n-p junction, which extends in planar fashion across the top side of a semiconductor crystal wafer. Separation edges form perpendicularly to the top side of the semiconductor crystal wafer, which edges extend across the p-n or n-p junction. The separation of the semiconductor crystal wafer is achieved in that, starting from a disturbance, a fissure is propagated by local heating and local cooling of the semiconductor crystal wafer. The separation fissure thus formed extends along crystal planes of the semiconductor crystal, which avoids the formation of defects in the area of the p-n or n-p junction.

摘要翻译： 在制造二极管的方法中，使用半导体晶体晶片来生产跨越半导体晶体晶片的顶侧以平面方式延伸的p-n或n-p结。 分离边缘垂直于半导体晶体晶片的顶侧形成，其边缘延伸穿过p-n或n-p结。 实现半导体晶体晶片的分离，其中从干扰开始，通过局部加热和半导体晶体晶片的局部冷却传播裂缝。 如此形成的分离裂隙沿着半导体晶体的晶面延伸，这避免了p-n或n-p结区域的缺陷的形成。

公开(公告)号：US09660550B2

公开(公告)日：2017-05-23

申请号：US13990334

申请日：2011-10-20

申请人： Richard Spitz ,  Alfred Goerlach ,  Carolin Tolksdorf ,  Dirk Ahlers ,  Dietrich Bonart

发明人： Richard Spitz ,  Alfred Goerlach ,  Carolin Tolksdorf ,  Dirk Ahlers ,  Dietrich Bonart

IPC分类号： H02M7/217 ,  H02M7/219 ,  H01L29/861 ,  H01L29/10 ,  H01L29/45 ,  H01L29/51 ,  H01L29/78

CPC分类号： H02M7/219 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/51 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.

公开(公告)号：US07236380B1

公开(公告)日：2007-06-26

申请号：US10563388

申请日：2004-06-26

申请人： Richard Spitz ,  Alfred Goerlach ,  Gert Wolf ,  Markus Mueller

发明人： Richard Spitz ,  Alfred Goerlach ,  Gert Wolf ,  Markus Mueller

IPC分类号： H02M1/14

CPC分类号： H02M7/06

摘要： A rectifier system, in particular a rectifier bridge for a three-phase generator, includes a plurality of rectifier elements, specifiable rectifier elements being different from the other rectifier elements in at least one property. The rectifier elements are, for example, diodes which differ from one another with regard to the following properties: switching time or the reverse recovery switching time and/or current density and/or chip area and/or chip thickness and/or the breakdown voltage and/or internal resistance and/or path resistance and/or with regard to another property which is suited for reducing ripple.

摘要翻译： 整流器系统，特别是用于三相发电机的整流器桥，包括多个整流元件，在至少一个属性中可指定的整流元件与其它整流元件不同。 整流元件例如是二极管，其关于以下特性彼此不同：开关时间或反向恢复开关时间和/或电流密度和/或芯片面积和/或芯片厚度和/或击穿电压 和/或内部电阻和/或路径电阻和/或关于适于减少纹波的另一性能。

公开(公告)号：US20070105454A1

公开(公告)日：2007-05-10

申请号：US10575526

申请日：2004-11-08

申请人： Richard Spitz ,  Alfred Goerlach ,  Karin Hamsen ,  Jochen Dietrich

发明人： Richard Spitz ,  Alfred Goerlach ,  Karin Hamsen ,  Jochen Dietrich

IPC分类号： H01R13/10

CPC分类号： H01L23/051 ,  H01L23/049 ,  H01L24/01 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/00

摘要： A diode, e.g., a press-fit power diode for a rectifier in a motor vehicle, includes a semiconductor chip which is connected to a head wire and a base via solder layers. A plastic sheathing, which is situated at least in the chip area and includes a plastic sleeve, enables a hard casting compound to be used and establishes a mechanical connection between the base and the head wire and forms a housing together with the base. An undercut, which extends into the casting compound, and a gap between the sleeve and the edge of the base achieve a compact design. Bevels provided on both sides enable the diode to be pressed into the rectifier from two sides.

摘要翻译： 二极管，例如用于机动车辆中的整流器的压配功率二极管，包括通过焊料层连接到头线和基座的半导体芯片。 至少位于芯片区域中并且包括塑料套筒的塑料护套能够使用硬质铸造化合物，并在基座和头部线材之间建立机械连接并与基座一起形成壳体。 延伸到铸造复合体中的底切以及套筒和基部边缘之间的间隙实现了紧凑的设计。 两侧提供的斜角使得二极管可以从两侧压入整流器。

公开(公告)号：US07170104B2

公开(公告)日：2007-01-30

申请号：US10070521

申请日：2001-06-22

申请人： Richard Spitz ,  Alfred Goerlach

发明人： Richard Spitz ,  Alfred Goerlach

IPC分类号： H01L29/866

CPC分类号： H01L27/0814 ,  H01L29/866

摘要： An arrangement having p-doped semiconductor layers and n-doped semiconductor layers which exhibits transitions between the p-doped semiconductor layers and n-doped semiconductor layers, the transitions displaying a Zener breakdown upon application of a voltage characteristic of a transition, a plurality of transitions between p-doped semiconductor layers and n-doped semiconductor layers being present, and the characteristic voltages additively make up the breakdown voltage of the entire arrangement. Also described is a method for manufacturing the arrangement.

摘要翻译： 具有p掺杂半导体层和n掺杂半导体层的布置，其在p掺杂半导体层和n掺杂半导体层之间呈现跃迁，该转变在施加转变的电压特性时显示齐纳击穿，多个 存在p掺杂半导体层和n掺杂半导体层之间的转变，并且特征电压相加地构成整个布置的击穿电压。 还描述了一种制造该装置的方法。

公开(公告)号：US08350378B2

公开(公告)日：2013-01-08

申请号：US10575526

申请日：2004-11-08

申请人： Richard Spitz ,  Alfred Goerlach ,  Karin Hamsen ,  Jochen Dietrich

发明人： Richard Spitz ,  Alfred Goerlach ,  Karin Hamsen ,  Jochen Dietrich

IPC分类号： H01L23/04

CPC分类号： H01L23/051 ,  H01L23/049 ,  H01L24/01 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/00

摘要： A diode, e.g., a press-fit power diode for a rectifier in a motor vehicle, includes a semiconductor chip which is connected to a head wire and a base via solder layers. A plastic sheathing, which is situated at least in the chip area and includes a plastic sleeve, enables a hard casting compound to be used and establishes a mechanical connection between the base and the head wire and forms a housing together with the base. An undercut, which extends into the casting compound, and a gap between the sleeve and the edge of the base achieve a compact design. Bevels provided on both sides enable the diode to be pressed into the rectifier from two sides.

摘要翻译： 二极管，例如用于机动车辆中的整流器的压配功率二极管，包括通过焊料层连接到头线和基座的半导体芯片。 至少位于芯片区域中并且包括塑料套筒的塑料护套能够使用硬质铸造化合物，并在基座和头部线材之间建立机械连接并与基座一起形成壳体。 延伸到铸造复合体中的底切以及套筒和基部边缘之间的间隙实现了紧凑的设计。 两侧提供的斜角使得二极管可以从两侧压入整流器。