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    Contact-via chain as corrosion detector
    3.
    发明授权
    Contact-via chain as corrosion detector 有权

    公开(公告)号：US10431507B2

    公开(公告)日：2019-10-01

    申请号：US15573252

    申请日：2016-05-09

    申请人： Robert Bosch GmbH

    发明人： Daniel Schneider ,  Franz Dietz

    IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00

    摘要： A detector for determining a faulty semiconductor component including a semiconductor component, a contact-via chain, which is situated laterally at a distance from the semiconductor component and which surrounds the semiconductor component in regions, a guard ring, which is situated laterally at a distance from the semiconductor component, and an evaluation unit, which is situated on the semiconductor component, wherein the evaluation unit is designed to apply an electrical voltage to the contact-via chain, in particular a permanent electrical voltage, to detect a resistance value of the contact-via chain and to produce an output signal when the resistance value of the contact-via chain exceeds a threshold value.

    Power transistor, driver and output stage including an active region, a metallization level, and a further metallization level
    4.
    发明授权
    Power transistor, driver and output stage including an active region, a metallization level, and a further metallization level 有权

    公开(公告)号：US10649021B2

    公开(公告)日：2020-05-12

    申请号：US16088099

    申请日：2017-03-01

    申请人： Robert Bosch GmbH

    发明人： Alexander Mann ,  Daniel Schneider ,  Henning Lohmeyer

    IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L29/417 ,  G01R31/40 ,  H01L23/528 ,  H03K17/14

    摘要： A power transistor, a driver and an output stage. The power transistor includes an active region and a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by stress (RPP stress) caused by repeated power pulses. The power transistor also includes a further metallization level, which is located above the metallization level and in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor. It is a characteristic of the power transistor that at least one cut-out is formed above the active region in the further metallization level. The cut-out has the effect of decreasing heat dissipation. The power transistor is thereby heated more intensely in the localized region, so that large temperature gradients occur in the transition region defined by the edges of the metal elements.

    POWER TRANSISTOR, DRIVER AND OUTPUT STAGE
    5.
    发明申请
    POWER TRANSISTOR, DRIVER AND OUTPUT STAGE 审中-公开

    公开(公告)号：US20190086467A1

    公开(公告)日：2019-03-21

    申请号：US16088099

    申请日：2017-03-01

    申请人： Robert Bosch GmbH

    发明人： Alexander Mann ,  Daniel Schneider ,  Henning Lohmeyer

    IPC分类号： G01R31/26 ,  H01L23/528 ,  H03K17/14 ,  G01R31/40

    摘要： A power transistor, a driver and an output stage. The power transistor includes an active region and a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by stress (RPP stress) caused by repeated power pulses. The power transistor also includes a further metallization level, which is located above the metallization level and in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor. It is a characteristic of the power transistor that at least one cut-out is formed above the active region in the further metallization level. The cut-out has the effect of decreasing heat dissipation. The power transistor is thereby heated more intensely in the localized region, so that large temperature gradients occur in the transition region defined by the edges of the metal elements.