摘要:
A compact, simpler, more economical ICF target chamber and reactor design that maintains a low internal pressure, sub-atmospheric, and very small neutron flux on any pressure bearing vessel or steam generating mechanism. The present invention reduces radiant target emission towards the nearest wall of the hohlraum wall and/or sleeve material so that the radiation from target burn exits the end of the hohlraum through a wall material sufficiently thick to contain the target drive radiation, but becomes transparent to the target emitted radiation. The compact converter contains the energy released by the ICF target and converts it into usable heat to create steam. It also converts the excess neutrons, from the ICF target, into tritium. This is then collected with the unburnt fuel tritium.
摘要:
A confinement chamber for Inertial Confinement Fusion (ICF) may include a closed hohlraum and ICF target wherein the ICF target may comprise a central spherical fuel region, inner shell, outer fuel region, outer shell, and propellant region. A multitude of cylindrical beam channels may penetrate the entire thickness of the hohlraum. At the end of each cylindrical beam channel, where they exit the hohlraum, is a hemispherical cavity. Centered in the curvature of each cavity, and coaxial with each beam channel is a gold foam radiator. By layering materials or grading the density of a material in the propellant region of the closed hohlraum ICF target, the pressure profile on the outer shell may be tailored.
摘要:
Cylindrical inertial confinement fusion reaction chambers are disclosed according to some embodiments of the invention. These chambers can include neutron moderating/absorbing material, radiation absorbing material, and debris collection material. These chambers can also include various injection ports, nozzles, beam ports, sacrificial layers, absorbers, coolant systems, etc. These chambers can be used with directional and/or omni-directional targets.
摘要:
An apparatus and method for the simultaneous determination of focus and source boresighting error for photolithographic steppers and scanners is described. A reticle containing custom arrays of box-in-box test structures specifically designed for performing source or exit pupil division using an aperture plate is exposed onto a resist coated wafer several times. The resulting exposure patterns are measured with a conventional overlay tool. The overlay data is processed with a slope-shift algorithm for the simultaneous determination of both focus and source telecentricity as a function of field position. Additionally, methods for ameliorating metrology induced effects and methods for producing precision Bossung curves are also described. This Abstract is provided for the sole purpose of complying with the Abstract requirement rules, it shall not be used to interpret or to limit the scope or the meaning of the claims.
摘要:
A technique for the determination of dynamic lens field curvature uniquely associated with a photolithographic scanner is described. A series of lithographic exposures is performed on a resist coated silicon wafer using a photolithographic scanner. The lithographic exposures produce an array of focusing fiducials that are displaced relative to each other in a unique way. The resulting measurements are fed into a computer algorithm that determines the dynamic lens field curvature (ZDLC) perpendicular to the scanning direction in an absolute sense. Furthermore, the effects of wafer flatness, wafer surface non-uniformity, and stage error are considered. The ZDLC information can be used to improve lithographic modeling, overlay modeling, and advanced process control techniques related to scanner stage dynamics.
摘要:
An in-situ interferometer includes an image modifying optic that produces light ray bundles. The light ray bundles are projected onto a reticle with a plurality of measurement fiducials encoded onto a face of the reticle. The measurement fiducials are exposed onto a sensing plane and their locations measured. Aberrations in the projection system are determined from the measurements of the exposed reticles.
摘要:
A reticle consisting of a multiplicity of small openings corresponding to separate and distinguishable points is put in the reticle plane. This reticle is imaged down through an opening O in aperture plate AP. A corresponding multiplicity of spots are created at the image plane of the optical system. These spots have spot centroids relative to the original separate and distinguishable points in the reticle. These points, however, are deviated from their diffraction limited positions by the average of grad .phi.(u)) over the corresponding ray bundle. The opening O in the aperture plate samples a discrete portion of the entrance pupil. With points spread out over an area of size 2*NAo*za, ray bundles with chief rays covering the entire entrance pupil will be projected down to image plane IP. The above outlined procedure is extended to analyzing the wavefront at a multiplicity of field points over the entire lens train. The process includes using an aperture plate AP consisting of a multiplicity of openings O. Each opening O is centered underneath a neighborhood of points that is accepted into the entrance pupil of the imaging objective. Points passing through all openings O will produce in the wafer plane a number of spot arrays corresponding to the number of openings O. The totality of all the arrays of spots whose centroids can be measured and reconstructed yields an aberrated wavefront .phi.(u;x) at a number of discrete field points x.
摘要:
The apparatus for machining and material processing includes an excimer laser and a Fresnel zone plate array (FZP) positioned parallel to the workpiece, with the distance between the FZP and the workpiece being the focal length of the FZP. For each hole to be formed on the workpiece a corresponding Fresnel zone is patterned onto the FZP. Each Fresnel zone may be patterned directly centered over the desired hole location or in high density patterns it may be located off-center from the hole with deflection being accomplished by the formation of finer circular arcs on the side of the Fresnel zone opposite the desired direction of deflection. A beam scanner is included to provide a more uniform illumination of the FZP by the laser beam. The scanning eliminates non-uniformity of intensity. The alignment mechanism uses a helium-neon laser, the beam from the which is projected onto a surface relief grating on the workpiece. The reflected light from the surface relief grating is filtered to create interference fringes which, when aligned, provide maximum light intensity projected through a transmission grating on the Fresnel zone plate.
摘要:
The laser ablation control system and method described is active in starting laser ablation, continuing laser ablation and finally tuning laser ablation in view of product output. First, it provides a means of generating initial settings for laser ablation tool operation utilizing the high predictability of ablation on substrates of known composition. Second, it provides real time monitoring and control of the laser output in terms of the characteristics important to the system performance as it relates to the abalation process. Third, it entails statistical analysis of the photo ablated pattern with correspondent adjustment to abalation parameters. Most importantly, these elements are continuously combined to achieve optimized performance monitored during the ablation process.
摘要:
The deformable wafter chuck system includes a base with a recess having a diameter slightly smaller than the diameter of the wafer to be held. The base may have one or more orifices or channels running therethrough for distributing a vacuum to secure the wafer to the chuck, or it may have a plurality of clips attached at the rim of the chuck for holding the wafer. Attached to the chuck within the recess is a plurality of distortive actuators, such as piezoelectric crystals, which cause the wafer to be selectively deformed to assume arbitrary shapes, cancelling the warpage of the wafer to permit reduced distortion of the projected pattern. An interferometer system is included to combine light reflected from the wafer surface with a portion of incoming light modulated by a mask or reticle, thereby forming an interference pattern. The interference pattern is sued by a computer to determine warpage-induced distortions to activate the actuators to provide realtime correction of wafer flatness and also permits adjustment of depth of focus by varying heights of portions of the wafer.