利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.016 秒)

    Preparation of high purity fluorinated peroxides
    1.
    发明申请
    Preparation of high purity fluorinated peroxides 审中-公开
    制备高纯度氟化过氧化物

    公开(公告)号：US20070049774A1

    公开(公告)日：2007-03-01

    申请号：US11211386

    申请日：2005-08-24

    申请人： Robert Syvret ,  Beth Campion ,  Gregory Cooper

    发明人： Robert Syvret ,  Beth Campion ,  Gregory Cooper

    IPC分类号： C07C409/00

    CPC分类号： C07C409/16 ,  C07C407/00 ,  C07C407/003 ,  C07C409/22

    摘要： This invention is directed to an improvement in a process for producing high-purity fluorinated peroxides typically formed by the reaction of a carbonyl fluoride with a hypofluorite. The improvement resides in a simplified process for the synthesis and recovery of high purity fluorinated high purity peroxide product and comprises the steps: (a) reacting the carbonyl fluoride with the hypofluorite under conditions such that a gaseous reaction product comprised of the fluorinated peroxide and unreacted carbonyl fluoride which is essentially free of unreacted hypofluorite is formed; (b) removing unreacted carbonyl fluoride and by products from the gaseous reaction product under gas phase conditions thereby generating a gaseous product stream containing the fluorinated peroxide; and then, (c) collecting the fluorinated peroxide from step (b) in gas phase.

    摘要翻译： 本发明涉及通过氟化碳与次氟酸反应形成的高纯度氟化过氧化物的方法的改进。 改进之处在于合成和回收高纯度氟化高纯度过氧化物产品的简化方法，包括以下步骤：（a）使氟化碳与次氟酸盐反应，使得由含氟过氧化物和未反应的气态反应产物 形成基本上不含未反应的次氟酸的碳酰氟; （b）在气相条件下从气态反应产物中除去未反应的碳酰氟和产物，从而产生含有氟化过氧化物的气态产物流; 然后，（c）从气相中收集步骤（b）中的含氟过氧化物。

    Stabilizers To Inhibit The Polymerization of Substituted Cyclotetrasiloxane
    3.
    发明申请
    Stabilizers To Inhibit The Polymerization of Substituted Cyclotetrasiloxane 审中-公开
    稳定剂抑制取代的环四硅氧烷的聚合

    公开(公告)号：US20080042105A1

    公开(公告)日：2008-02-21

    申请号：US11872221

    申请日：2007-10-15

    申请人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

    发明人： Steven Mayorga ,  Manchao Xiao ,  Thomas Gaffney ,  Robert Syvret

    IPC分类号： C09K15/32

    CPC分类号： C07F7/21 ,  C07F7/089 ,  C07F7/20 ,  C23C16/401 ,  C23C16/4402

    摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of an antioxidant polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and an antioxidant.

    摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于电子材料制造中用于氧化硅的化学气相沉积工艺中的聚合，包括向其提供有效量的抗氧化聚合抑制剂 环四硅氧烷; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和抗氧化剂。

    Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
    4.
    发明申请
    Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas 审中-公开
    在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂

    公开(公告)号：US20050014383A1

    公开(公告)日：2005-01-20

    申请号：US10619922

    申请日：2003-07-15

    申请人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    发明人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    IPC分类号： H01L21/3065 ,  C09K13/08 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31116

    摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.

    摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的电介质材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

    Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas
    5.
    发明申请
    Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas 审中-公开
    在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂

    公开(公告)号：US20070224829A1

    公开(公告)日：2007-09-27

    申请号：US11693302

    申请日：2007-03-29

    申请人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    发明人： Bing Ji ,  Stephen Motika ,  Robert Syvret ,  Peter Badowski ,  Eugene Karwacki ,  Howard Withers ,  Ronald Pearlstein

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31116

    摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.

    摘要翻译： 本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。 具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的介电材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。 本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。