摘要:
An improved electroluminescent display of the type having a substrate on which are applied ITO electrodes having dielectric, phosphor and dielectric stacks positioned thereon is formed with cavities between the stacks which expose a portion of each ITO electrode. The structure is annealed before or after the cavities are cut. Then a metal assist structure applied over the exposed portion of each ITO electrode. A planarization layer is applied over each metal assist structure and metal electrodes are placed to complete the display.
摘要:
A metal shield structure is provided for an integrated circuit (IC) having at least a first metal contact coupled to a fixed potential and a second metal contact. A first passivation layer is located between the first and second metal contacts and on a first portion of the first metal contact and a first portion of the second metal contact, leaving a second portion of the first metal contact and a second portion of the second metal contact uncovered by the first passivation layer. A metal shield layer is provided on the second portion of the first metal contact and on the first passivation layer, and a second passivation layer is formed on the metal shield layer.
摘要:
A device for assembling orders of food from prepared food items having multiple sides on different sides of the device is disclosed. Also disclosed is a system including the device and a method of assembling orders of food. Each side has a plurality of side receptacles accessible to a worker at the side. Adjacent to the sides is a holding area for holding prepared food items. Preferably the heated holding area has a central portion that is heated.
摘要:
A metal shield structure is provided for an integrated circuit (IC) having at least a first metal contact coupled to a fixed potential and a second metal contact. A first passivation layer is located between the first and second metal contacts and on a first portion of the first metal contact and a first portion of the second metal contact, leaving a second portion of the first metal contact and a second portion of the second metal contact uncovered by the first passivation layer. A metal shield layer is provided on the second portion of the first metal contact and on the first passivation layer, and a second passivation layer is formed on the metal shield layer.
摘要:
An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).
摘要:
A transmitter comprises a complex mixer to generate a single I analog drive signal and a single Q analog drive signal, and a single multi-dimensional optical modulator configured to modulate an optical carrier light using the single I analog drive signal and the single Q analog drive signal to produce a modulated optical signal for transmission. Alternatively, a transmitter comprises a complex mixer to generate two I analog drive signals and two Q analog drive signals, and a single multi-dimensional multiple-electrode optical modulator configured to modulate an optical carrier light using the analog drive signals to produce a modulated optical signal for transmission. In both transmitters, the optical carrier light is produced by a single laser, and frequency components of the first data signal are located in a different portion of a spectrum of the modulated optical signal than frequency components of the second data signal.
摘要:
A system for transmitting a plurality of data channels and an optical service channel through an optical fiber link of a Wavelength Division Multiplexed (WDM) optical communications system. The system comprises a first transmitter at a first end of the optical fiber link, for transmitting the data channels as a wavelength division multiplexed optical signal through the optical fiber link in a first direction. A second transmitter is connected at a second end of the optical fiber link, for transmitting the optical service channel through the optical fiber link in a second direction opposite to the first direction.
摘要:
A hemostasis analyzer, such as the Thrombelastograph® (TEG®) hemostasis analyzer is utilized to measure continuously in real time, the hemostasis process from the initial fibrin formation, through platelet-fibrin interaction and lysis to generate blood hemostasis parameters. The measured blood hemostasis parameters permit evaluation of platelet inhibition therapy.
摘要:
A method of transmitting a data signal in an optical communications system. The method includes processing the data signal to generate an analog drive signal, wherein the processing comprises applying a first non-linear operation such that frequency components of the drive signal lay in at least two separated spectral bands. An optical carrier light is modulated using the analog drive signal.
摘要:
A method of cleaning polybenzoxazole (PBO) from a semiconductor wafer coated with PBO includes baking a PBO-coated semiconductor wafer, and then exposing the semiconductor wafer with ultraviolet light through a patterned mask to soften selected regions of PBO on the semiconductor wafer. PBO is then dissolved in an edge region of the semiconductor wafer with solvent. After dissolving PBO in the edge region, the semiconductor wafer is chemically developed to dissolve the elected softened regions of PBO on the semiconductor wafer and to dissolve PBO remaining in the edge region of the semiconductor wafer that was left behind after the step of dissolving the PBO in the edge region with the solvent.