公开(公告)号：US06969683B2

公开(公告)日：2005-11-29

申请号：US10750348

申请日：2003-12-31

申请人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

发明人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

IPC分类号： H01L21/311 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76831 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76829

摘要： A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.

摘要翻译： 提供了一种在电介质层中形成双镶嵌互连的方法。 通常，在电介质中蚀刻第一孔。 在电介质的一部分上形成中毒阻挡层，防止抗蚀剂中毒。 在毒物屏障层上形成图案化掩模。 第二孔被蚀刻到电介质层中，其中第一孔的至少一部分具有与第二孔的至少一部分相同的面积。

公开(公告)号：US06713386B1

公开(公告)日：2004-03-30

申请号：US10025304

申请日：2001-12-19

申请人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

发明人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76829

摘要： A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.

公开(公告)号：US06686272B1

公开(公告)日：2004-02-03

申请号：US10020084

申请日：2001-12-13

申请人： Sang-Yun Lee ,  Masaichi Eda ,  Hongqiang Lu ,  Wei-Jen Hsia ,  Wilbur G. Catabay ,  Hiroaki Takikawa ,  Yongbae Kim

发明人： Sang-Yun Lee ,  Masaichi Eda ,  Hongqiang Lu ,  Wei-Jen Hsia ,  Wilbur G. Catabay ,  Hiroaki Takikawa ,  Yongbae Kim

IPC分类号： H01L214763

CPC分类号： H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0276 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  Y10S438/931 ,  Y10S438/952

摘要： The present invention is directed to a silicon carbide anti-reflective coating (ARC) and a silicon oxycarbide ARC. Another embodiment is directed to a silicon oxycarbide ARC that is treated with oxygen plasma. The invention includes method embodiments for forming silicon carbide layers and silicon oxycarbide layers as ARC's on a semiconductor substrate surface. Particularly, the methods include introducing methyl silane materials into a process chamber where they are ignited as plasma and deposited onto the substrate surface as silicon carbide. Another method includes introducing methyl silane precursor materials with an inert carrier gas into the process chamber with oxygen. These materials are ignited into a plasma, and silicon oxycarbide material is deposited onto the substrate. By regulating the oxygen flow rate, the optical properties of the silicon oxycarbide layer can be adjusted. In another embodiment, the silicon oxycarbide layer can be treated with oxygen plasma.

摘要翻译： 本发明涉及碳化硅抗反射涂层（ARC）和碳氧化硅ARC。 另一个实施方案涉及用氧等离子体处理的碳氧化硅ARC。 本发明包括在半导体衬底表面上形成碳化硅层和碳氧化硅层作为ARC的方法实施例。 特别地，所述方法包括将甲基硅烷材料引入处理室中，其中它们被等离子体点燃并作为碳化硅沉积在基板表面上。 另一种方法包括将具有惰性载气的甲基硅烷前体材料用氧气引入到处理室中。 将这些材料点燃到等离子体中，并将​​碳氧化硅材料沉积到基底上。 通过调节氧气流速，可以调节碳硅氧烷层的光学性能。 在另一个实施方案中，可以用氧等离子体处理碳氧化硅层。