公开(公告)号：US09390941B2

公开(公告)日：2016-07-12

申请号：US13510296

申请日：2010-11-16

申请人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

发明人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/3213 ,  G03F7/40 ,  H01J37/32 ,  H01L21/027 ,  H01L21/28

CPC分类号： H01L21/32139 ,  G03F7/40 ,  H01J37/32357 ,  H01J37/32807 ,  H01J37/32816 ,  H01J37/32871 ,  H01L21/0273 ,  H01L21/28035

摘要： There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.

摘要翻译： 提供了一种能够以优异的再现性将真空紫外光施加到晶片的整个表面的VUV光处理装置，并且可以以优异的再现性以VUV（真空紫外线）光处理晶片。 VUV光处理装置包括：与气体供给装置和排气装置连接的室，所述室能够减小所述室内的压力; 等离子体光源，其产生包括200nm以下的波长的VUV光，所述等离子体光源包括在所述室中产生等离子体的等离子体发生单元; VUV透射滤光器，其设置在放置有待处理样品的台和样品之间，VUV透射滤光器透射包含200nm以下的波长的VUV光，不透射电子，离子和基团 在等离子体中，VUV透射滤光器的外径尺寸大于样品的尺寸。

公开(公告)号：US06969683B2

公开(公告)日：2005-11-29

申请号：US10750348

申请日：2003-12-31

申请人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

发明人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

IPC分类号： H01L21/311 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76831 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76829

摘要： A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.

摘要翻译： 提供了一种在电介质层中形成双镶嵌互连的方法。 通常，在电介质中蚀刻第一孔。 在电介质的一部分上形成中毒阻挡层，防止抗蚀剂中毒。 在毒物屏障层上形成图案化掩模。 第二孔被蚀刻到电介质层中，其中第一孔的至少一部分具有与第二孔的至少一部分相同的面积。

公开(公告)号：US06686272B1

公开(公告)日：2004-02-03

申请号：US10020084

申请日：2001-12-13

申请人： Sang-Yun Lee ,  Masaichi Eda ,  Hongqiang Lu ,  Wei-Jen Hsia ,  Wilbur G. Catabay ,  Hiroaki Takikawa ,  Yongbae Kim

发明人： Sang-Yun Lee ,  Masaichi Eda ,  Hongqiang Lu ,  Wei-Jen Hsia ,  Wilbur G. Catabay ,  Hiroaki Takikawa ,  Yongbae Kim

IPC分类号： H01L214763

CPC分类号： H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/0276 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  Y10S438/931 ,  Y10S438/952

摘要： The present invention is directed to a silicon carbide anti-reflective coating (ARC) and a silicon oxycarbide ARC. Another embodiment is directed to a silicon oxycarbide ARC that is treated with oxygen plasma. The invention includes method embodiments for forming silicon carbide layers and silicon oxycarbide layers as ARC's on a semiconductor substrate surface. Particularly, the methods include introducing methyl silane materials into a process chamber where they are ignited as plasma and deposited onto the substrate surface as silicon carbide. Another method includes introducing methyl silane precursor materials with an inert carrier gas into the process chamber with oxygen. These materials are ignited into a plasma, and silicon oxycarbide material is deposited onto the substrate. By regulating the oxygen flow rate, the optical properties of the silicon oxycarbide layer can be adjusted. In another embodiment, the silicon oxycarbide layer can be treated with oxygen plasma.

摘要翻译： 本发明涉及碳化硅抗反射涂层（ARC）和碳氧化硅ARC。 另一个实施方案涉及用氧等离子体处理的碳氧化硅ARC。 本发明包括在半导体衬底表面上形成碳化硅层和碳氧化硅层作为ARC的方法实施例。 特别地，所述方法包括将甲基硅烷材料引入处理室中，其中它们被等离子体点燃并作为碳化硅沉积在基板表面上。 另一种方法包括将具有惰性载气的甲基硅烷前体材料用氧气引入到处理室中。 将这些材料点燃到等离子体中，并将​​碳氧化硅材料沉积到基底上。 通过调节氧气流速，可以调节碳硅氧烷层的光学性能。 在另一个实施方案中，可以用氧等离子体处理碳氧化硅层。

公开(公告)号：US20120228261A1

公开(公告)日：2012-09-13

申请号：US13510296

申请日：2010-11-16

申请人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

发明人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01L21/32139 ,  G03F7/40 ,  H01J37/32357 ,  H01J37/32807 ,  H01J37/32816 ,  H01J37/32871 ,  H01L21/0273 ,  H01L21/28035

摘要： There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.

摘要翻译： 提供了一种能够以优异的再现性将真空紫外光施加到晶片的整个表面的VUV光处理装置，并且可以以优异的再现性以VUV（真空紫外线）光处理晶片。 VUV光处理装置包括：与气体供给装置和排气装置连接的室，所述室能够减小所述室内的压力; 等离子体光源，其产生包括200nm以下的波长的VUV光，所述等离子体光源包括在所述室中产生等离子体的等离子体发生单元; VUV透射滤光器，其设置在放置有待处理样品的台和样品之间，VUV透射滤光器透射包含200nm以下的波长的VUV光，不透射电子，离子和基团 在等离子体中，VUV透射滤光器的外径尺寸大于样品的外径尺寸。

公开(公告)号：US20120093617A1

公开(公告)日：2012-04-19

申请号：US13011041

申请日：2011-01-21

申请人： Yutaka Kudou ,  Hiroaki Takikawa ,  Takahiro Shimomura ,  Masakazu Isozaki ,  Takashi Uemura

发明人： Yutaka Kudou ,  Hiroaki Takikawa ,  Takahiro Shimomura ,  Masakazu Isozaki ,  Takashi Uemura

IPC分类号： H01L21/67

CPC分类号： H01L21/67745 ,  H01L21/67748

摘要： A vacuum processing apparatus including a processing chamber for processing a sample to be processed, a cooling chamber for cooling the high-temperature sample processed in the processing chamber, and a vacuum transfer chamber for establishing a connection between the processing chamber and the cooling chamber, a vacuum transfer robot equipped inside the vacuum transfer chamber, wherein the cooling chamber includes a gas-exhausting unit for reducing pressure inside the cooling chamber, a gas-supplying unit for supplying a gas into the cooling chamber, a pressure-controlling unit for controlling the pressure inside the cooling chamber, a supporting unit for supporting the high-temperature sample, and a mounting stage for proximity-holding the sample supported by the supporting unit, the mounting stage having a temperature-adjusting unit for adjusting the temperature of surface of the mounting stage into a temperature which is capable of cooling the high-temperature sample, the supporting unit having an ascending/descending-speed varying unit.

摘要翻译： 一种真空处理设备，包括处理待处理样品的处理室，用于冷却在处理室中处理的高温样品的冷却室和用于建立处理室和冷却室之间的连接的真空传送室， 设置在真空传送室内部的真空传送机器人，其中冷却室包括用于减小冷却室内的压力的排气单元，用于将气体供应到冷却室中的气体供应单元，用于控制 冷却室内的压力，用于支撑高温试样的支撑单元和用于接近保持由支撑单元支撑的样品的安装台，安装台具有用于调节表面温度的温度调节单元 将安装阶段转换成能够冷却高温样品的载体 g单元具有上升/下降速度变化单元。

公开(公告)号：US06713386B1

公开(公告)日：2004-03-30

申请号：US10025304

申请日：2001-12-19

申请人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

发明人： Rongxiang Hu ,  Yongbae Kim ,  Sang-Yun Lee ,  Hiroaki Takikawa ,  Shumay Dou ,  Sarah Neuman ,  Philippe Schoenborn ,  Keith Chao ,  Dilip Vijay ,  Kai Zhang ,  Masaichi Eda

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76829

摘要： A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.