Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines
    3.
    发明授权
    Processing for forming integrated circuit structure with low dielectric constant material between closely spaced apart metal lines 有权
    在紧密间隔开的金属线之间形成具有低介电常数材料的集成电路结构的处理

    公开(公告)号:US06559033B1

    公开(公告)日:2003-05-06

    申请号:US09892250

    申请日:2001-06-27

    IPC分类号: H01L2176

    摘要: Protective caps are formed over horizontally closely spaced apart metal lines of an integrated circuit structure. Low k silicon oxide dielectric material is then deposited over and between the metal lines and over protective caps on the lines. After the formation of such low k material between the lines and over the caps, standard k dielectric material is deposited over the low k layer as a planarizing layer over low portions of the low k layer between the lines which may be lower than the top of the caps on the lines to prevent further etching or dishing of the low k layer of during planarizing. The structure is then planarized to bring the low k dielectric material down to the tops of the protective caps on the metal lines. A layer of standard k silicon material is then formed over the planarized low k layer and the caps to allow via formation without passing through the low k layer to avoid via poisoning.

    摘要翻译: 保护盖形成在集成电路结构的水平间隔开的金属线上。 然后将低k氧化硅电介质材料沉积在金属线之间和之间并且在线上的保护帽上方。 在线之间和帽之上形成这样的低k材料之后,标准k电介质材料沉积在低k层上作为在低k层之间的低k层的低部分之上的平坦化层,其可以低于 线上的帽,以防止在平坦化期间进一步蚀刻或凹陷低k层。 然后将该结构平坦化以将低k电介质材料降低到金属线上的保护帽的顶部。 然后在平坦化的低k层和盖上形成标准k硅材料层,以允许通孔形成而不通过低k层以避免通过中毒。

    Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning
    5.
    发明授权
    Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning 有权
    制造倾斜侧壁通孔用于集成电路结构以抑制中毒的方法

    公开(公告)号:US06559048B1

    公开(公告)日:2003-05-06

    申请号:US09870851

    申请日:2001-05-30

    IPC分类号: H01L214763

    CPC分类号: H01L21/76804

    摘要: Via poisoning of vias formed in low k carbon-containing silicon oxide dielectric material is suppressed by forming the via in a layer of such dielectric material with a smooth inwardly sloped sidewall. Such a sloped sidewall via can be etched in a low k dielectric layer by first forming a via resist mask over the upper surface of such a dielectric layer, then heat treating the mask sufficiently to deform the sidewall geometry of the resist mask to form a sloped sidewall on the opening or openings in the heat treated resist mask. The resulting erosion of such a resist mask, during a subsequent etch step to form the via in the low k dielectric material through such a sloped sidewall resist mask, imparts a tapered or sloped sidewall geometry to the via which is then formed in the underlying layer of low k dielectric material. In a preferred embodiment, when the via is cut through several layers of different types of dielectric material, the smoothness of the sloped sidewall of the resulting via is enhanced by adjusting the selectivity of the via etch to uniformly etch each of the layers of dielectric material at approximately the same rate.

    摘要翻译: 通过在具有平滑向内倾斜的侧壁的这种介电材料的层中形成通孔来抑制通过在低k含碳氧化硅电介质材料中形成的通孔的中毒。 这样的倾斜的侧壁通孔可以通过首先在这种电介质层的上表面上形成通孔抗蚀剂掩模来在低k电介质层中被蚀刻,然后充分热处理掩模以使抗蚀剂掩模的侧壁几何形状变形以形成倾斜的 侧壁在热处理抗蚀剂掩模的开口或开口上。 在随后的蚀刻步骤中,通过这种倾斜的侧壁抗蚀剂掩模在低k电介质材料中形成通孔,所得到的这种抗蚀剂掩模的侵蚀赋予通孔锥形或倾斜的侧壁几何形状,然后形成在下层 的低k电介质材料。 在优选实施例中,当通孔被切割成若干层不同类型的电介质材料时,通过调节通孔蚀刻的选择性以均匀蚀刻电介质材料的每一层来增强所得通孔的倾斜侧壁的平滑度 大致相同的速度。

    Method and apparatus of advanced deblocking filter in video coding

    公开(公告)号:US11153562B2

    公开(公告)日:2021-10-19

    申请号:US15758874

    申请日:2016-09-13

    摘要: A method and apparatus for adaptive de-blocking filter are disclosed. One or more parameters associated with a de-blocking filter are determined. De-blocking filter using the derived parameters are then applied to reconstructed blocks. Each set of parameters is used for each picture, slice, coding tree unit (CTU) or CU (coding unit). The parameters can be signalled in VPS (video parameter set), SPS (sequence parameter set), PPS (picture parameter set), slice header, CTU (coding tree unit) or CU (coding unit) of the video bitstream. The parameters correspond to one or more values used as thresholds, clipping boundaries, or both the thresholds and clipping boundaries for the de-blocking filter. In one embodiment, the parameters for the current picture are determined using a training process using a current coded picture a previous coded picture as training data.

    Junction box bar bracket
    8.
    发明授权

    公开(公告)号:US10135232B2

    公开(公告)日:2018-11-20

    申请号:US15373815

    申请日:2016-12-09

    IPC分类号: H02G3/12 F16B2/20

    摘要: Improvements in a bracket is disclosed for mounting an electrical box onto a mounting bar. An electrical box can be preinstalled onto the bracket and clamped onto the mounting bar using wings. Bendable tabs can be articulated to secure the bracket and onto a rail. Fasteners are used to secure an electrical junction box onto the bracket and an additional fastener secures the sub assembly to the rail. The tabs can be unbent for removal. An installer can secure the bracket and electrical box using a screw and adjust the position of the bracket on the mounting bar. The bracket provides a low profile assemble that allows the bracket to be installed between the inner surfaces of stud walls.