公开(公告)号：US08816447B2

公开(公告)日：2014-08-26

申请号：US13751467

申请日：2013-01-28

Applicant: Round Rock Resarch, LLC

Inventor： Shuang Meng ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/511 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02183 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3141 ,  H01L21/76843 ,  H01L28/75 ,  H01L28/84 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Devices such as transistors having an oxide layer that provide a depletion field in a conduction channel. A barrier layer is formed over the oxide layer. A gate electrode is formed over the barrier layer. The barrier layer and gate electrode are configured to reduce the width of the depletion field absent a voltage applied to the gate electrode.

Abstract translation: 诸如具有在传导通道中提供耗尽场的氧化物层的晶体管的器件。 在氧化物层上形成阻挡层。 在阻挡层上形成栅电极。 阻挡层和栅电极被配置为在没有施加到栅电极的电压的情况下减小耗尽场的宽度。