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    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    1.
    发明申请
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 有权
    在硅砂的正面形成网状电极的工艺

    公开(公告)号：US20100294359A1

    公开(公告)日：2010-11-25

    申请号：US12783761

    申请日：2010-05-20

    申请人： Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    发明人： Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    IPC分类号： H01L31/0392 ,  H01L21/283 ,  H01L29/40

    CPC分类号： H01L31/022433 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  H01B1/16 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps: (1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit over the bottom set of finger lines, wherein the metal paste B is printed in a grid pattern which comprises (i) thin parallel finger lines forming a top set of finger lines superimposing the bottom set of finger lines and (ii) busbars intersecting the finger lines at right angle, and (3) firing the double-printed silicon wafer, wherein the inorganic content of metal paste B contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属糊剂A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥包含含有0.2至3重量％玻璃的无机物质的金属浆料B 玻璃料覆盖在底部指状线组上，其中金属糊料B以网格图案打印，该网格图案包括（i）薄的平行指线，形成叠加了底部指状线组的顶部一组指纹线，以及（ii）与 指状物为直角，（3）烧制双面印刷的硅晶片，其中金属糊料B的无机物含量比金属膏A的无机物含量少，玻璃料加上任选存在的其它无机添加剂。

    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
    2.
    发明申请
    PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER 失效
    在硅砂的正面形成网状电极的工艺

    公开(公告)号：US20100294361A1

    公开(公告)日：2010-11-25

    申请号：US12783832

    申请日：2010-05-20

    申请人： David Kent Anderson ,  Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    发明人： David Kent Anderson ,  Russell David Anderson ,  Kenneth Warren Hang ,  Shih-Ming Kao ,  Giovanna Laudisio ,  Cheng-Nan Lin ,  Chun-Kwei Wu

    IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L31/0224

    CPC分类号： H01L31/022425 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

    摘要： A process of forming a front-grid electrode on a silicon wafer having an ARC layer, comprising the steps:(1) printing and drying a metal paste A comprising an inorganic content comprising 0.5 to 8 wt.-% of glass frit and having fire-through capability, wherein the metal paste A is printed on the ARC layer to form a bottom set of thin parallel finger lines, (2) printing and drying a metal paste B comprising an inorganic content comprising 0 to 3 wt.-% of glass frit over the bottom set of finger lines forming a top set of finger lines superimposing the bottom set of finger lines, (3) printing and drying a metal paste C comprising an inorganic content comprising 0.2 to 3 wt.-% of glass frit to form busbars intersecting the finger lines at right angle, and (4) firing the triple-printed silicon wafer, wherein the inorganic content of metal paste B as well as that of paste C contains less glass frit plus optionally present other inorganic additives than the inorganic content of metal paste A.

    摘要翻译： 一种在具有ARC层的硅晶片上形成前栅格电极的方法，包括以下步骤：（1）印刷和干燥包含0.5至8重量％玻璃料并具有火焰的无机物含量的金属糊剂A 通过能力，其中金属膏A印刷在ARC层上以形成底部薄的平行指线，（2）印刷和干燥含有0至3重量％玻璃的无机物含量的金属浆料B （3）印刷和干燥包含0.2至3重量％玻璃料的无机物含量的金属浆料C以形成玻璃料，以形成最下面的一组指纹， 母线与指纹线成直角相交，（4）烧制三印刷硅片，其中金属糊料B的无机物含量以及糊状物C的无机物含量比无机物含量少，玻璃料加上任选存在的其它无机添加剂 的金属糊 一个。

    Process for the production of a MWT silicon solar cell
    5.
    发明授权
    Process for the production of a MWT silicon solar cell 有权
    生产MWT硅太阳能电池的工艺

    公开(公告)号：US09054242B2

    公开(公告)日：2015-06-09

    申请号：US13022799

    申请日：2011-02-08

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    IPC分类号： H01L31/0224 ,  H01L31/18 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24

    CPC分类号： H01L31/02245 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

    摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

    摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。

    PROCESS OF FORMING A GRID CATHODE ON THE FRONT-SIDE OF A SILICON WAFER
    6.
    发明申请
    PROCESS OF FORMING A GRID CATHODE ON THE FRONT-SIDE OF A SILICON WAFER 审中-公开
    在硅砂的正面形成网状阴极的方法

    公开(公告)号：US20110146781A1

    公开(公告)日：2011-06-23

    申请号：US12822466

    申请日：2010-06-24

    申请人： Giovanna Laudisio ,  Kenneth Warren Hang ,  Richard John Sheffield Young

    发明人： Giovanna Laudisio ,  Kenneth Warren Hang ,  Richard John Sheffield Young

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01B1/16 ,  C03C3/072 ,  C03C8/12 ,  C03C8/18 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process for the production of a grid cathode on the front-side of a silicon wafer by applying and firing a metal paste on the silicon wafer in a front-side grid electrode pattern to form a seed grid cathode and subsequently subjecting the silicon wafer to a LIP process, wherein the metal paste comprises an organic vehicle and an inorganic content comprising (a) 90 to 98 wt.-% of at least one electrically conductive metal powder selected from the group consisting of nickel, copper and silver, and (b) 0.25 to 8 wt.-% of at least one glass frit selected from the group consisting of glass frits containing 47.5 to 64.3 wt.-% of PbO, 23.8 to 32.2 wt.-% of SiO2, 3.9 to 5.4 wt.-% of Al2O3, 2.8 to 3.8 wt.-% of TiO2 and 6.9 to 9.3 wt.-% of B2O3.

    摘要翻译： 一种通过在前面的栅极电极图案中在硅晶片上施加和烧制金属浆料来形成硅晶片正面的栅极的方法，以形成种子栅极阴极，随后使硅晶片 LIP方法，其中所述金属糊包括有机载体和无机含量，所述无机物含量包含（a）90至98重量％的至少一种选自镍，铜和银的导电金属粉末和（b ）0.25至8重量％的至少一种玻璃料，其选自含有47.5至64.3重量％的PbO的玻璃料，23.8至32.2重量％的SiO 2，3.9至5.4重量％ 的Al 2 O 3，2.8〜3.8重量％的TiO 2和6.9〜9.3重量％的B 2 O 3。

    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL
    8.
    发明申请
    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL 失效
    制造MWT硅太阳能电池的方法

    公开(公告)号：US20110139238A1

    公开(公告)日：2011-06-16

    申请号：US12963003

    申请日：2010-12-08

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    IPC分类号： H01L31/02 ,  H01L31/18

    CPC分类号： C03C8/02 ,  C03C8/12 ,  C03C8/16 ,  C03C8/18 ,  H01B1/22 ,  H01L31/02245 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/928

    摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

    摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。