公开(公告)号：US20120021570A1

公开(公告)日：2012-01-26

申请号：US13184589

申请日：2011-07-18

申请人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

发明人： Ryota TAJIMA ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Ryo TOKUMARU ,  Yuji EGI ,  Erika KATO ,  Miyako MORIKUBO

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78696 ,  C30B25/105 ,  C30B25/183 ,  C30B29/06 ,  C30B29/08 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78648

摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

摘要翻译： 在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至 填充混合晶粒之间的空间。 在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。 在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

公开(公告)号：US20120208360A1

公开(公告)日：2012-08-16

申请号：US13368379

申请日：2012-02-08

申请人： Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Takashi OHTSUKI ,  Ryota TAJIMA ,  Erika KATO

发明人： Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Takashi OHTSUKI ,  Ryota TAJIMA ,  Erika KATO

IPC分类号： H01L21/336 ,  H01L21/3065

CPC分类号： H01L29/66765 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/78648 ,  H01L29/78696

摘要： A microcrystalline semiconductor film is formed over a substrate using a plasma CVD apparatus which includes a reaction chamber in such a manner that a deposition gas and hydrogen are supplied to the reaction chamber in which the substrate is set between a first electrode and a second electrode; and plasma is generated in the reaction chamber by supplying high-frequency power to the first electrode. Note that the plasma density in a region overlapping with an end portion of the substrate in a region where the plasma is generated is set to be higher than that in a region which is positioned more on the inside than the region overlapping with the end portion of the substrate, so that the microcrystalline semiconductor film is formed over a region which is positioned more on the inside than the end portion of the substrate.

摘要翻译： 使用等离子体CVD装置在基板上形成微晶半导体膜，所述等离子体CVD装置包括反应室，使得将沉积气体和氢气供应到反应室中，其中基板设置在第一电极和第二电极之间; 并且通过向第一电极提供高频电力而在反应室中产生等离子体。 注意，在等离子体产生的区域中与衬底的端部重叠的区域中的等离子体密度设定为高于在位于更内侧的区域中的等离子体密度 使得微结晶半导体膜形成在位于比衬底的端部更靠内侧的区域上。

公开(公告)号：US20100327281A1

公开(公告)日：2010-12-30

申请号：US12820201

申请日：2010-06-22

申请人： Miyako NAKAJIMA ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Erika KATO ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI

发明人： Miyako NAKAJIMA ,  Hidekazu MIYAIRI ,  Toshiyuki ISA ,  Erika KATO ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/6675 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

摘要翻译： 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。

公开(公告)号：US20100230677A1

公开(公告)日：2010-09-16

申请号：US12715629

申请日：2010-03-02

申请人： Hidekazu MIYAIRI ,  Erika KATO ,  Kunihiko SUZUKI

发明人： Hidekazu MIYAIRI ,  Erika KATO ,  Kunihiko SUZUKI

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/31

CPC分类号： H01L29/4908 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed.

摘要翻译： 其中不可能引起初始操作劣化的薄膜晶体管及其制造方法。 一种晶体管，其至少具有栅极绝缘层，其最上表面是氮化硅层，栅极绝缘层上的半导体层，以及半导体层上的缓冲层，其中，在界面附近的氮浓度 半导体层中的半导体层和栅极绝缘层比缓冲层和半导体层的其它部分低。 这样的薄膜晶体管可以通过将栅极绝缘层暴露于空气气氛中，并且在形成半导体层之前对栅极绝缘层进行等离子体处理来制造。