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公开(公告)号：US20080203404A1
公开(公告)日：2008-08-28
申请号：US12023177
申请日：2008-01-31
CPC分类号： H01S5/0425 , H01L31/0224 , H01S5/22
摘要： In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.
摘要翻译： 在发射或接收与形成在半导体衬底上的有源表面基本垂直或平行的光的光学半导体器件中，光学半导体器件，形成在有源表面侧并连接到有源表面的电极是阶梯形或 在电极端部呈锥形。 光半导体器件的电极由包括粘合剂层，扩散防止层和Au层的三层形成，并且通过Au层的厚度或厚度的差异来形成台阶状或带状构造 的粘合层/扩散防止层/ Au层。
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公开(公告)号：US07687295B2
公开(公告)日：2010-03-30
申请号：US12023177
申请日：2008-01-31
CPC分类号： H01S5/0425 , H01L31/0224 , H01S5/22
摘要： In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.
摘要翻译： 在发射或接收与形成在半导体衬底上的有源表面基本垂直或平行的光的光学半导体器件中，光学半导体器件，形成在有源表面侧并连接到有源表面的电极是阶梯形或 在电极端部呈锥形。 光半导体器件的电极由包括粘合剂层，扩散防止层和Au层的三层形成，并且通过Au层的厚度或厚度的差异来形成台阶状或带状构造 的粘合层/扩散防止层/ Au层。
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公开(公告)号：US07687874B2
公开(公告)日：2010-03-30
申请号：US11702203
申请日：2007-02-05
申请人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
发明人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
IPC分类号： H01L31/105 , H01L29/868
CPC分类号： H01L31/075 , H01L31/022408 , Y02E10/548
摘要： In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the heavily doped layer on a side near the substrate. In a p-i-n multilayer structure, a portion corresponding to a light receiving section of a heavily doped layer on a side near a substrate is previously made thinner than the periphery of the light receiving section by an etching or selective growth technique, over which an absorbing layer and another heavily doped layer are grown to form the light receiving section of mesa structure. This makes it possible to form a good ohmic contact and to realize a PIN-PD with excellent high frequency response characteristics.
摘要翻译： 在使用重掺杂半导体材料形成的台面型PIN-PD中，当入射到光接收部分中的光透射通过吸收层并到达重掺杂层时，在重掺杂层中出现慢载流子时，高频响应降低 靠近基板的一侧。 在pin多层结构中，通过蚀刻或选择性生长技术，预先使与基底附近一侧的重掺杂层的光接收部分对应的部分比光接收部分的周边薄， 并且生长另一重掺杂层以形成台面结构的光接收部分。 这使得可以形成良好的欧姆接触并实现具有优异的高频响应特性的PIN-PD。
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公开(公告)号：US20080006895A1
公开(公告)日：2008-01-10
申请号：US11702203
申请日：2007-02-05
申请人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
发明人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
IPC分类号： H01L31/075
CPC分类号： H01L31/075 , H01L31/022408 , Y02E10/548
摘要： In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the heavily doped layer on a side near the substrate. In a p-i-n multilayer structure, a portion corresponding to a light receiving section of a heavily doped layer on a side near a substrate is previously made thinner than the periphery of the light receiving section by an etching or selective growth technique, over which an absorbing layer and another heavily doped layer are grown to form the light receiving section of mesa structure. This makes it possible to form a good ohmic contact and to realize a PIN-PD with excellent high frequency response characteristics.
摘要翻译： 在使用重掺杂半导体材料形成的台面型PIN-PD中，当入射到光接收部分中的光透射通过吸收层并到达重掺杂层时，在重掺杂层中出现慢载流子时，高频响应降低 靠近基板的一侧。 在pin多层结构中，通过蚀刻或选择性生长技术，预先使与基底附近一侧的重掺杂层的光接收部分对应的部分比光接收部分的周边薄， 并且生长另一重掺杂层以形成台面结构的光接收部分。 这使得可以形成良好的欧姆接触并实现具有优异的高频响应特性的PIN-PD。
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公开(公告)号：US07998766B2
公开(公告)日：2011-08-16
申请号：US12108553
申请日：2008-04-24
IPC分类号： H01L21/00
CPC分类号： H01S5/0265 , H01S5/0425
摘要： A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.
摘要翻译： 提供半导体元件和半导体元件的制造方法。 脊形波导型半导体集成元件包括：EA部分的电极和LD部分的电极，被布置为彼此远离; EA部分的接触层和LD部分的接触层被布置成彼此远离，并且其中每个电极形成在上表面的至少一部分的上表面和边缘上 表面设置为与电极相同的电位; 作为从所述两个接触层中的一个的边缘延伸到所述另一接触层的边缘的绝缘性凹/凸结构的钝化膜; 以及用于嵌入钝化膜的聚酰亚胺树脂。
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公开(公告)号：US20090065901A1
公开(公告)日：2009-03-12
申请号：US12108553
申请日：2008-04-24
CPC分类号： H01S5/0265 , H01S5/0425
摘要： A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.
摘要翻译： 提供半导体元件和半导体元件的制造方法。 脊形波导型半导体集成元件包括：EA部分的电极和LD部分的电极，被布置为彼此远离; EA部分的接触层和LD部分的接触层被布置成彼此远离，并且其中每个电极形成在上表面的至少一部分的上表面和边缘上 表面设置为与电极相同的电位; 作为从所述两个接触层中的一个的边缘延伸到所述另一接触层的边缘的绝缘性凹/凸结构的钝化膜; 以及用于嵌入钝化膜的聚酰亚胺树脂。
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公开(公告)号：US20080036044A1
公开(公告)日：2008-02-14
申请号：US11832248
申请日：2007-08-01
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2086 , H01S5/209 , H01S2301/173
摘要： To eliminate generation of a damaged layer caused by dry etching of a contact layer, occurring in a manufacturing process of a ridge waveguide type semiconductor laser, and to improve reliability and yield thereof, a method is provided involving forming a spacer layer and a damage receptor layer on the contact layer, making the two layer absorb damage caused by dry etching a passivation film in an upper portion of the ridge waveguide structure, and thereafter removing the damaged layer by the dry etching, by selective removal by wet etching.
摘要翻译： 为了消除在脊波导型半导体激光器的制造过程中发生的接触层的干蚀刻产生的损伤层，并且为了提高其可靠性和产率，提供了一种方法，包括形成间隔层和损伤受体 层，从而使两层吸收在脊形波导结构的上部干蚀刻钝化膜所造成的损伤，然后通过干蚀刻选择性去除而去除受损层。
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公开(公告)号：US07923573B2
公开(公告)日：2011-04-12
申请号：US11577822
申请日：2005-10-26
申请人： Kazuhiko Tamaki , Takahiro Yamaguchi , Kozo Oda , Naoki Terasaka , Daisuke Nakai , Masakazu Nakadai
发明人： Kazuhiko Tamaki , Takahiro Yamaguchi , Kozo Oda , Naoki Terasaka , Daisuke Nakai , Masakazu Nakadai
CPC分类号： C07C217/80 , C07C45/00 , C07C45/673 , C07C45/68 , C07C47/565 , C07C65/24 , C07C65/30 , C07C65/34 , C07C65/40 , C07C69/78 , C07C69/88 , C07C69/92 , C07C69/94 , C07C205/35 , C07C235/34 , C07C235/46 , C07C255/57 , C07C311/04 , C07C311/08 , C07C317/22 , C07C317/46 , C07C323/62 , C07D213/55 , C07D213/65 , C07D213/71 , C07D213/79 , C07D213/80 , C07D239/26 , C07D257/04 , C07D277/30 , C07D307/84 , C07D333/24
摘要： A superior LXR modulator is provided. A compound represented by the general formula (I): [wherein R1: —COR9 (wherein R9: alkyl, optionally substituted alkoxy or optionally substituted amino); R2: H, OH, alkoxy, optionally substituted amino, etc.; R3: H, optionally substituted alkyl, cycloalkyl, optionally substituted alkoxy, optionally substituted amino, halogeno, etc.; R4 and R5: H, optionally substituted alkyl, halogeno, etc.; R6 and R7: H, alkyl; R8: —X2R10 [wherein R10: —COR11 (wherein R11: OH, optionally substituted alkoxy, optionally substituted amino, etc.), —SO2R12 (wherein R12: optionally substituted alkyl, optionally substituted amino, etc.), tetrazol-5-yl, etc.; X2: single bond, optionally substituted alkylene, etc.]; X1: —NH—, —O—, —S—, etc.; Y1: optionally substituted phenyl, optionally substituted 5- to 6-membered aromatic heterocyclyl; Y2: optionally substituted aryl, optionally substituted heterocyclyl, etc.] and the like is provided.
摘要翻译： 提供了优越的LXR调制器。 由通式（I）表示的化合物：[其中R 1：-COR 9（其中R 9：烷基，任选取代的烷氧基或任选取代的氨基）; R2：H，OH，烷氧基，任选取代的氨基等; R3：H，任选取代的烷基，环烷基，任选取代的烷氧基，任选取代的氨基，卤代等; R4和R5：H，任选取代的烷基，卤代等; R6和R7：H，烷基; R8：-X2R10 [其中R10：-COR11（其中R11：OH，任选取代的烷氧基，任选取代的氨基等），-SO 2 R 12（其中R 12：任选取代的烷基，任选取代的氨基等），四唑-5-基， 基等; X2：单键，任选取代的亚烷基等]; X1：-NH-，-O-，-S-等; Y1：任选取代的苯基，任选取代的5-至6-元芳族杂环基; Y2：任选取代的芳基，任选取代的杂环基等]等。
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公开(公告)号：US20110013943A1
公开(公告)日：2011-01-20
申请号：US12775893
申请日：2010-05-07
申请人： Takashi Sakamoto , Hiroaki Ohkuma , Daisuke Nakai
发明人： Takashi Sakamoto , Hiroaki Ohkuma , Daisuke Nakai
IPC分类号： G03G15/08
CPC分类号： G03G15/0887 , G03G15/0893 , G03G2215/0833 , G03G2215/0838
摘要： A developing device includes a first chamber, a second chamber, a first inlet portion, a first carrying member and an auxiliary blade. The first chamber receives a developer supplied to a developer holder. The second chamber receives the developer carried from the first chamber after being circulated between the first chamber and the second chamber. The first inlet portion allows the developer to be introduced from the second chamber to the first chamber. The first carrying member is disposed in the first chamber to carry the developer in the first chamber in a first carrying direction. The first carrying member includes a rotating shaft, a spiral blade provided at an outer periphery of the rotating shaft, and the auxiliary blade formed toward an upstream side of the first carrying direction from the spiral blade.
摘要翻译： 显影装置包括第一室，第二室，第一入口部，第一承载构件和辅助叶片。 第一室接收供应给显影剂架的显影剂。 在第一室和第二室之间循环之后，第二室容纳从第一室运送的显影剂。 第一入口部分允许显影剂从第二室引入第一室。 第一承载构件设置在第一室中，以在第一输送方向上携带显影剂在第一室中。 第一承载构件包括旋转轴，设置在旋转轴的外周的螺旋叶片和从螺旋叶片朝向第一传送方向的上游侧形成的辅助叶片。
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公开(公告)号：US08750751B2
公开(公告)日：2014-06-10
申请号：US13474950
申请日：2012-05-18
申请人： Daisuke Nakai , Takashi Sakamoto , Hiroaki Okuma
发明人： Daisuke Nakai , Takashi Sakamoto , Hiroaki Okuma
IPC分类号： G03G15/08
CPC分类号： G03G15/0886 , G03G15/0877 , G03G2215/0692
摘要： An image forming apparatus includes an image carrier, a developing device, a toner container, a container support member, a toner supply unit, a transfer device, a fixing device, and a restricting mechanism. The toner container includes a container housing having a container opening, a sealing member having a hole that communicates with the container opening, and a shutter member. The shutter member is slidable between a closed position and an open position at which a front end portion of the shutter member in an attachment direction at least partially overlaps with the sealing member. When the shutter member is at the open position, the front end portion is pressed in a direction away from the toner container by the sealing member, and the restricting mechanism restricts a position of a back end portion of the shutter member, the back end portion is opposed to the front end portion.
摘要翻译： 图像形成装置包括图像载体，显影装置，调色剂容器，容器支撑构件，调色剂供应单元，转印装置，定影装置和限制机构。 调色剂容器包括具有容器开口的容器壳体，具有与容器开口连通的孔的密封构件和活门构件。 活门构件可以在闭合位置和打开位置之间滑动，在该位置，挡板构件的前端部分沿安装方向至少部分地与密封构件重叠。 当活门构件处于打开位置时，前端部分通过密封构件沿远离调色剂容器的方向被按压，并且限制机构限制活门构件的后端部分的位置，后端部分 与前端部相对。
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