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    METHOD AND DEVICE FOR PLASMA-TREATING WORKPIECES
    2.
    发明申请
    METHOD AND DEVICE FOR PLASMA-TREATING WORKPIECES 有权
    用于等离子体处理工件的方法和装置

    公开(公告)号：US20130004682A1

    公开(公告)日：2013-01-03

    申请号：US13634138

    申请日：2011-03-03

    申请人： Sönke Siebels ,  Sebastian Kytzia

    发明人： Sönke Siebels ,  Sebastian Kytzia

    IPC分类号： C23C16/52

    CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/511 ,  G01J3/02 ,  G01J3/0218 ,  G01J3/443 ,  G01N21/68 ,  H01J37/32192 ,  H01J37/32779 ,  H01J37/32935

    摘要： The method and device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. The method process is optically monitored at least at times. In the optical monitoring, spectral lines of the radiation of the plasma above 500 nanometers are evaluated. Preferably, the evaluation is performed for frequencies above 700 nanometers.

    摘要翻译： 该方法和装置用于等离子体处理工件。 将工件插入可至少部分抽真空的处理台的室中。 等离子体室由室底部，室盖和侧室壁限定。 至少有时会对该方法过程进行光学监控。 在光学监测中，评估500纳米以上等离子体辐射的光谱线。 优选地，对于700纳米以上的频率进行评估。

    DEVICE FOR PLASMA TREATMENT OF WORKPIECES
    4.
    发明申请
    DEVICE FOR PLASMA TREATMENT OF WORKPIECES 审中-公开
    用于等离子体处理工作的装置

    公开(公告)号：US20130186336A1

    公开(公告)日：2013-07-25

    申请号：US13702662

    申请日：2011-06-03

    申请人： Sönke Siebels ,  Hartwig Müller

    发明人： Sönke Siebels ,  Hartwig Müller

    IPC分类号： C23C16/458

    CPC分类号： C23C16/458 ,  B65D23/02 ,  C23C16/045 ,  C23C16/45561 ,  C23C16/511 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32807 ,  H01J37/32899 ,  H01L21/68764 ,  H01L21/68771

    摘要： A device for plasma treatment of workpieces. The workpiece is placed into a chamber of a processing station that can be at least partially evacuated. The plasma chamber is bounded by a chamber floor, a chamber cover, and a side chamber wall. The plasma chamber is coupled to a device for feeding and/or discharging process gases in a controlled manner. The plasma chamber is further disposed on a rotatable plasma wheel supported on a static base. At least one process gas channel is disposed in the region of the base, bounded at least in regions by a cover. The cover is implemented as part of the plasma wheel and includes at least one connection opening to the process gas channel. The connection opening can be coupled to an inner chamber by a connecting channel and at least one control valve.

    摘要翻译： 用于等离子体处理工件的装置。 将工件放置在可以至少部分抽真空的处理站的室中。 等离子体室由室底板，室盖和侧室壁限定。 等离子体室联接到用于以受控方式进料和/或排出处理气体的装置。 等离子体室进一步设置在支撑在静态基座上的可旋转等离子体轮上。 至少一个处理气体通道设置在基部的区域中，至少通过盖限定在区域中。 盖被实现为等离子体轮的一部分，并且包括至少一个连接到工艺气体通道的开口。 连接开口可以通过连接通道和至少一个控制阀联接到内室。

    Method and device for supplying at least one machining station for a workpiece
    5.
    发明申请
    Method and device for supplying at least one machining station for a workpiece 审中-公开
    用于为工件供应至少一个加工台的方法和装置

    公开(公告)号：US20070062911A1

    公开(公告)日：2007-03-22

    申请号：US10575709

    申请日：2004-10-12

    申请人： Sönke Siebels

    发明人： Sönke Siebels

    IPC分类号： H01H33/66

    CPC分类号： A61L2/14 ,  B29C49/36 ,  B29C49/42 ,  B29C51/22 ,  B29C51/26 ,  B29C2791/006 ,  C23C14/56 ,  C23C16/4412 ,  F04B7/0046

    摘要： The invention relates to a method and a device for supplying at least one vacuum machining station. A first part of a supply device is arranged on a rotatable carrier element and is guided in such a way that it can be displaced in relation to a fixed second part of the supply device. A gap extends at least partially between the first part and the second part of the supply device, said gap being at least partially unsealed from the environment.

    摘要翻译： 本发明涉及一种用于供应至少一个真空加工台的方法和装置。 供应装置的第一部分布置在可旋转的载体元件上并且被引导成使得其可以相对于供应装置的固定的第二部分移位。 间隙至少部分地在供应装置的第一部分和第二部分之间延伸，所述间隙至少部分地与环境不密封。