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公开(公告)号：US07682516B2
公开(公告)日：2010-03-23
申请号：US11244870
申请日：2005-10-05
IPC分类号： H01L21/302
CPC分类号： H01L21/0273 , H01L21/31144
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
摘要翻译： 提供了一种用于蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。
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公开(公告)号：US08614149B2
公开(公告)日：2013-12-24
申请号：US13586571
申请日：2012-08-15
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译： 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。
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公开(公告)号：US08268118B2
公开(公告)日：2012-09-18
申请号：US12711420
申请日：2010-02-24
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
IPC分类号： H01L21/3065
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译： 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。
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公开(公告)号：US20060266478A1
公开(公告)日：2006-11-30
申请号：US11142509
申请日：2005-05-31
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
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公开(公告)号：US20120309201A1
公开(公告)日：2012-12-06
申请号：US13586571
申请日：2012-08-15
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译： 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。
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公开(公告)号：US07695632B2
公开(公告)日：2010-04-13
申请号：US11142509
申请日：2005-05-31
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译： 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。
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公开(公告)号：US20070075038A1
公开(公告)日：2007-04-05
申请号：US11244870
申请日：2005-10-05
申请人： S.M. Sadjadi , Peter Cirigliano , Jisoo Kim , Zhisong Huang , Eric Hudson
发明人： S.M. Sadjadi , Peter Cirigliano , Jisoo Kim , Zhisong Huang , Eric Hudson
IPC分类号： B44C1/22 , C23F1/00 , H01L21/306 , C03C15/00
CPC分类号： H01L21/0273 , H01L21/31144
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
摘要翻译： 提供了一种蚀刻蚀刻层中的特征的方法。 在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。 沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。 通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。 去除面具。
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公开(公告)号：US08172948B2
公开(公告)日：2012-05-08
申请号：US11934023
申请日：2007-11-01
申请人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译： 提供了一个图层中的一个特征。 在该层上形成光致抗蚀剂层。 光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。 在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。 氟从保形层去除，而剩余的保形层留在原位。 将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。
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公开(公告)号：US07309646B1
公开(公告)日：2007-12-18
申请号：US11545903
申请日：2006-10-10
申请人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译： 提供了一个图层中的一个特征。 在该层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光刻胶特征具有第一临界尺寸。 在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。 氟从保形层去除，而剩余的保形层留在原位。 将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。
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公开(公告)号：US08864931B2
公开(公告)日：2014-10-21
申请号：US12907899
申请日：2010-10-19
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/00 , H01L21/033
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译： 提供了蚀刻介电层的方法。 在介电层上形成具有掩模特征的图案化掩模。 面具具有隔离区域和密集区域的面具功能。 掩模被多个周期修剪，其中每个周期包括沉积沉积层，以及选择性地蚀刻沉积层和图案化掩模。 选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。 使用如此修整的掩模蚀刻电介质层。 去除面具。
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