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    ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20180337651A1

    公开(公告)日：2018-11-22

    申请号：US15791523

    申请日：2017-10-24

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Yeong Gyu LEE ,  Jeong Suong YANG ,  Hyung Goo BAEK

    IPC: H03H3/08 ,  H03H9/05 ,  H03H9/10

    Abstract: An acoustic wave device includes an acoustic wave generator formed on one surface of a substrate; a support member formed on the one surface of the substrate spaced apart from the acoustic wave generator; a protective member coupled to the support member and disposed to be spaced apart from the acoustic wave generator; and a sealing part encapsulating the protective member and the support member, wherein the sealing part includes one, or a plurality of, first hermetic layer(s) and one, or a plurality of, second hermetic layer(s), and the first hermetic layer(s) and the second hermetic layer(s) are alternately stacked.

    BULK ACOUSTIC WAVE RESONATOR AND FILTER INCLUDING THE SAME
    2.
    发明申请
    BULK ACOUSTIC WAVE RESONATOR AND FILTER INCLUDING THE SAME 审中-公开
    大容量声波谐波器和滤波器，包括它们

    公开(公告)号：US20160301380A1

    公开(公告)日：2016-10-13

    申请号：US15007725

    申请日：2016-01-27

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Moon Chul LEE ,  Yeong Gyu LEE ,  Chul Soo KIM ,  Jea Shik SHIN ,  Duck Hwan KIM ,  Sang Uk SON

    IPC: H03H9/54 ,  H03H9/17 ,  H03H9/02

    CPC classification number: H03H9/02133 ,  H03H9/173 ,  H03H9/587 ,  H03H9/605

    Abstract: A bulk acoustic wave resonator including a substrate; an air cavity formed on the substrate; and a resonating part formed on the air cavity and comprising a first electrode, a piezoelectric layer, and a second electrode which are sequentially laminated, wherein a cross section of the air cavity has a short side, a long side opposing the short side, a first lateral side and a second lateral side connecting the short side and the long side to each other, the first and second lateral sides are inclined, and a surface roughness of the first electrode, the piezoelectric layer, the second electrode, or any combination thereof is between 1 nm and 100 nm.

    Abstract translation: 一种包括衬底的体声波谐振器; 形成在基板上的空气腔; 以及谐振部，其形成在所述空气腔上并且包括依次层叠的第一电极，压电层和第二电极，其中所述空气腔的横截面具有短边，与所述短边相对的长边， 第一侧面和第二侧面将短边和长边彼此连接，第一和第二横向侧倾斜，并且第一电极，压电层，第二电极或其任何组合的表面粗糙度 在1nm和100nm之间。

    ACOUSTIC WAVE RESONATOR AND FILTER INCLUDING THE SAME
    6.
    发明申请
    ACOUSTIC WAVE RESONATOR AND FILTER INCLUDING THE SAME 审中-公开
    声波谐波器和滤波器，包括它们

    公开(公告)号：US20170077898A1

    公开(公告)日：2017-03-16

    申请号：US15232116

    申请日：2016-08-09

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Ho Soo PARK ,  Jea Shik SHIN ,  Sang Uk SON ,  Yeong Gyu LEE ,  Moon Chul LEE ,  Duck Hwan KIM ,  Chul Soo KIM

    IPC: H03H9/05 ,  H03H9/205 ,  H03H9/13 ,  H03H9/54

    Abstract: An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

    Abstract translation: 声波谐振器包括基板; 设置在所述基板的第一表面上并包括第一电极，压电层和第二电极的谐振部分; 以及盖，其设置在所述基板的所述第一表面上，并且包括容纳所述共振部的容纳部。 谐振部分被配置为由从衬底的与衬底的第一表面相对的一侧面朝向衬底的第二表面布置的第一器件衬底输出的信号中的一个或两个来操作，以及从衬底的第一表面输出的信号 设置在盖上的第二装置基板。

    BULK ACOUSTIC WAVE RESONATOR
    7.
    发明申请
    BULK ACOUSTIC WAVE RESONATOR 有权
    大容量声波谐振器

    公开(公告)号：US20160164488A1

    公开(公告)日：2016-06-09

    申请号：US14918242

    申请日：2015-10-20

    Applicant: Samsung Electro-Mechanics Co., Ltd.

    Inventor： Jea Shik SHIN ,  Yeong Gyu LEE ,  Ho Soo PARK

    IPC: H03H9/02 ,  H03H9/17

    CPC classification number: H03H9/171 ,  H03H9/02118 ,  H03H9/02125 ,  H03H9/132 ,  H03H9/17 ,  H03H9/173

    Abstract: A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap.

    Abstract translation: 体声波谐振器可以包括：包括压电材料的压电层; 设置在所述压电层的一个表面上的第一电极; 设置在所述压电层的另一个表面上的第二电极; 以及设置在所述压电层的一个表面上且围绕所述第一电极的框架，其中所述框架与所述第一电极间隔开预定的间隙。

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