Integrated circuit devices
    2.
    发明授权

    公开(公告)号:US11670676B2

    公开(公告)日:2023-06-06

    申请号:US17379051

    申请日:2021-07-19

    Abstract: An integrated circuit device includes: a fin-type active region on a substrate and including a fin top surface at a first level; a gate line on the fin-type active region; and an insulating structure on a sidewall of the fin-type active region. The insulating structure includes: a first insulating liner in contact with a sidewall of the fin-type active region; a second insulating liner on the first insulating liner and including an uppermost portion at a second level c than the first level; a lower buried insulating layer facing the sidewall of the fin-type active region and including a first top surface facing the gate line at a third level lower than the second level; and an upper buried insulating layer between the lower buried insulating layer and the gate line and including a second top surface at a fourth level equal to or higher than the second level.

    INTEGRATED CIRCUIT DEVICES
    4.
    发明公开

    公开(公告)号:US20230261047A1

    公开(公告)日:2023-08-17

    申请号:US18307074

    申请日:2023-04-26

    Abstract: An integrated circuit device includes: a fin-type active region on a substrate and including a fin top surface at a first level; a gate line on the fin-type active region; and an insulating structure on a sidewall of the fin-type active region. The insulating structure includes: a first insulating liner in contact with a sidewall of the fin-type active region; a second insulating liner on the first insulating liner and including an uppermost portion at a second level c than the first level; a lower buried insulating layer facing the sidewall of the fin-type active region and including a first top surface facing the gate line at a third level lower than the second level; and an upper buried insulating layer between the lower buried insulating layer and the gate line and including a second top surface at a fourth level equal to or higher than the second level.

    INTEGRATED CIRCUIT DEVICE
    5.
    发明申请

    公开(公告)号:US20250133791A1

    公开(公告)日:2025-04-24

    申请号:US18741416

    申请日:2024-06-12

    Abstract: An integrated circuit device includes a first fin-type active region and a second fin-type active region, each extending on a substrate in a first horizontal direction, a plurality of gate lines on the first fin-type active region and second fin-type active region, the plurality of gate lines extending in a second horizontal direction that crosses the first horizontal direction, a first source/drain region and a second source/drain region respectively in the first fin-type active region and second fin-type active region, wherein each of the first source/drain region and the second source/drain region is disposed between the plurality of gate lines, a spacer structure disposed on the plurality of gate lines, the first source/drain region and the second source/drain region, and a protective insulating film disposed on the second source/drain region and exposing the first source/drain region.

    Integrated circuit devices
    6.
    发明授权

    公开(公告)号:US12107122B2

    公开(公告)日:2024-10-01

    申请号:US18307074

    申请日:2023-04-26

    Abstract: An integrated circuit device includes: a fin-type active region on a substrate and including a fin top surface at a first level; a gate line on the fin-type active region; and an insulating structure on a sidewall of the fin-type active region. The insulating structure includes: a first insulating liner in contact with a sidewall of the fin-type active region; a second insulating liner on the first insulating liner and including an uppermost portion at a second level c than the first level; a lower buried insulating layer facing the sidewall of the fin-type active region and including a first top surface facing the gate line at a third level lower than the second level; and an upper buried insulating layer between the lower buried insulating layer and the gate line and including a second top surface at a fourth level equal to or higher than the second level.

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