公开(公告)号：US20210098592A1

公开(公告)日：2021-04-01

申请号：US16837329

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkoo Kang ,  Sungsoo Kim ,  Sunki Min ,  Iksoo Kim ,  Donghyun Roh

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L21/764 ,  H01L29/66

Abstract: A semiconductor device includes a substrate including an active region extending in a first direction; a gate structure intersecting the active region and extending in a second direction on the substrate, the gate structure including a gate electrode, a gate capping layer on the gate electrode, and a plurality of spacers on side surfaces of the gate electrode; source/drain regions on the active region on at least one side of the gate structure; a first insulating layer and a second insulating layer on the source/drain regions on at least one side of the gate structure; and contact plugs on the source/drain regions and penetrating the first and second insulating layers. The plurality of spacers include a first spacer on the side surfaces of the gate electrode, an air-gap spacer on an external side surface of the first spacer, and a second spacer on an external side surface of the air-gap spacer An upper portion of the second spacer is bent towards an upper portion of the first spacer and is configured to cap the air-gap spacer.

公开(公告)号：US12094941B2

公开(公告)日：2024-09-17

申请号：US17712726

申请日：2022-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggwang Kim ,  Sangkoo Kang ,  Donghyun Roh ,  Koungmin Ryu

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/41791 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/7851

Abstract: A semiconductor device includes a gate structure including a gate electrode, a gate spacer layer on a side surface of the gate electrode, and a gate capping layer on the gate electrode. Moreover, the semiconductor device includes a source/drain region on at least one side of the gate structure, a contact plug on the source/drain region, and first and second insulating films between the contact plug and the gate structure and defining an air gap. The first insulating film includes a first surface, and a second surface extending from the first surface while forming a first angle. The second insulating film includes a third surface forming a second angle with the first surface of the first insulating film. The second angle is an acute angle narrower than the first angle. The air gap is defined by the first surface, the second surface, and the third surface.

公开(公告)号：US20220077301A1

公开(公告)日：2022-03-10

申请号：US17526634

申请日：2021-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkoo Kang ,  Sungsoo Kim ,  Sunki Min ,  Iksoo Kim ,  Donghyun Roh

IPC: H01L29/49 ,  H01L21/764 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423

Abstract: A semiconductor device includes a substrate including an active region extending in a first direction; a gate structure intersecting the active region and extending in a second direction on the substrate, the gate structure including a gate electrode, a gate capping layer on the gate electrode, and a plurality of spacers on side surfaces of the gate electrode; source/drain regions on the active region on at least one side of the gate structure; a first insulating layer and a second insulating layer on the source/drain regions on at least one side of the gate structure; and contact plugs on the source/drain regions and penetrating the first and second insulating layers. The plurality of spacers include a first spacer on the side surfaces of the gate electrode, an air-gap spacer on an external side surface of the first spacer, and a second spacer on an external side surface of the air-gap spacer. An upper portion of the second spacer is bent towards an upper portion of the first spacer and is configured to cap the air-gap spacer.

公开(公告)号：US12191373B2

公开(公告)日：2025-01-07

申请号：US17526634

申请日：2021-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkoo Kang ,  Sungsoo Kim ,  Sunki Min ,  Iksoo Kim ,  Donghyun Roh

IPC: H01L29/49 ,  H01L21/764 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

Abstract: A method includes: forming a sacrificial gate structure on the active region; forming a spacer structure including a first spacer, a second spacer, and an air-gap spacer, the air-gap spacer capped by bending an upper portion of the second spacer toward an upper portion of the first spacer; forming an insulating structure on the sides of the spacer structure; forming a gap region; and forming a gate structure including a gate dielectric layer, a gate electrode, and a gate capping layer in the gap region. The upper portion of the second spacer is in physical contact with the upper portion of the first spacer on a contact surface, and a lowermost end of the contact surface is on a level higher than an upper surface of the gate electrode with the substrate being a reference base level.

公开(公告)号：US20240258399A1

公开(公告)日：2024-08-01

申请号：US18471260

申请日：2023-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaeho Na ,  Sangkoo Kang ,  Donghyun Roh ,  Dahye Kim

IPC: H01L29/49 ,  H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/4983 ,  H01L21/02126 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/775

Abstract: An integrated circuit device includes a gate line disposed on a fin-type active region, a source/drain region disposed on the fin-type active region, and an insulating spacer structure that covers the gate line and the source/drain region. The insulating spacer structure includes a first spacer portion that covers the sidewall of the gate line, a second spacer portion integrally connected to the first spacer portion, where the second spacer portion protrudes in a first lateral direction and covers a partial region of a sidewall of the source/drain region, and a spacer corner portion that fills a corner space defined by the gate line and the source/drain region between the first spacer portion and the second spacer portion. The insulating spacer structure has a single film structure that includes a SiOC film doped with about 0 at % to about 5 at % of nitrogen atoms.

公开(公告)号：US20250133791A1

公开(公告)日：2025-04-24

申请号：US18741416

申请日：2024-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chaeho Na ,  Sangkoo Kang ,  Sunki Min

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: An integrated circuit device includes a first fin-type active region and a second fin-type active region, each extending on a substrate in a first horizontal direction, a plurality of gate lines on the first fin-type active region and second fin-type active region, the plurality of gate lines extending in a second horizontal direction that crosses the first horizontal direction, a first source/drain region and a second source/drain region respectively in the first fin-type active region and second fin-type active region, wherein each of the first source/drain region and the second source/drain region is disposed between the plurality of gate lines, a spacer structure disposed on the plurality of gate lines, the first source/drain region and the second source/drain region, and a protective insulating film disposed on the second source/drain region and exposing the first source/drain region.

公开(公告)号：US20240312903A1

公开(公告)日：2024-09-19

申请号：US18599910

申请日：2024-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkoo Kang ,  Wookyung You ,  Koungmin Ryu ,  Hoonseok Seo ,  Woojin Lee

IPC: H01L23/522 ,  H01L23/48 ,  H01L23/528 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/5226 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/5286 ,  H01L29/41733 ,  H01L29/775 ,  H01L29/78696

Abstract: Provided is a semiconductor device, the semiconductor device, including: a plurality of fin-type active patterns extending in a first direction on a substrate; a gate structure extending in a second direction, and crossing the plurality of fin-type active patterns; a plurality of separation structures extending in the second direction; source/drain regions disposed on the plurality of fin-type active patterns on both sides of the gate structure; an interlayer insulating layer covering the source/drain regions on the substrate; a contact structure connected to at least one of the source/drain regions; a buried conductive structure electrically connected to the contact structure in the interlayer insulating layer, and having a first width defined by a distance between adjacent separation structures among the plurality of separation structures; and a power transmission structure extending from the second surface toward the first surface of the substrate, and connected to the buried conductive structure.

公开(公告)号：US20230080850A1

公开(公告)日：2023-03-16

申请号：US17712726

申请日：2022-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggwang Kim ,  Sangkoo Kang ,  Donghyun Roh ,  Koungmin Ryu

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

Abstract: A semiconductor device includes a gate structure including a gate electrode, a gate spacer layer on a side surface of the gate electrode, and a gate capping layer on the gate electrode. Moreover, the semiconductor device includes a source/drain region on at least one side of the gate structure, a contact plug on the source/drain region, and first and second insulating films between the contact plug and the gate structure and defining an air gap. The first insulating film includes a first surface, and a second surface extending from the first surface while forming a first angle. The second insulating film includes a third surface forming a second angle with the first surface of the first insulating film. The second angle is an acute angle narrower than the first angle. The air gap is defined by the first surface, the second surface, and the third surface.

公开(公告)号：US11189707B2

公开(公告)日：2021-11-30

申请号：US16837329

申请日：2020-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkoo Kang ,  Sungsoo Kim ,  Sunki Min ,  Iksoo Kim ,  Donghyun Roh

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/764

Abstract: A semiconductor device includes a substrate including an active region extending in a first direction; a gate structure intersecting the active region and extending in a second direction on the substrate, the gate structure including a gate electrode, a gate capping layer on the gate electrode, and a plurality of spacers on side surfaces of the gate electrode; source/drain regions on the active region on at least one side of the gate structure; a first insulating layer and a second insulating layer on the source/drain regions on at least one side of the gate structure; and contact plugs on the source/drain regions and penetrating the first and second insulating layers. The plurality of spacers include a first spacer on the side surfaces of the gate electrode, an air-gap spacer on an external side surface of the first spacer, and a second spacer on an external side surface of the air-gap spacer An upper portion of the second spacer is bent towards an upper portion of the first spacer and is configured to cap the air-gap spacer.