公开(公告)号：US20240276707A1

公开(公告)日：2024-08-15

申请号：US18435680

申请日：2024-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sinyeon Kim ,  Jooseong Yun ,  Jieun Lee ,  Hana Cho

IPC: H10B12/00 ,  H01L29/06 ,  H01L29/423

CPC classification number: H10B12/34 ,  H01L29/0649 ,  H01L29/4236

Abstract: A semiconductor device includes an active region, an isolation region on a side surface of the active region, a gate trench having a first trench portion crossing the active region and a second trench portion in the isolation region, a first gate portion within the first trench portion and a second gate portion within the second trench portion. The first gate portion and the second gate portion each includes a gate dielectric layer, a gate electrode on the gate dielectric layer, partially filling the gate trench, and having an upper surface disposed on a level lower than an upper end of the active region, and an insulative capping pattern on the gate electrode. The first gate portion includes a lower region, an intermediate region on the lower region, and an upper region on the intermediate region. A maximum width of the intermediate region is greater than a maximum width of the lower region and greater than a maximum width of the upper region.

公开(公告)号：US20240321938A1

公开(公告)日：2024-09-26

申请号：US18591310

申请日：2024-02-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheoljin Cho ,  Yukyung Shin ,  Jieun Lee ,  Hanjin Lim ,  Changhwa Jung ,  Jayun Choi

IPC: H10B12/00

CPC classification number: H01L28/55 ,  H10B12/482 ,  H10B12/488

Abstract: A semiconductor device includes a lower electrode disposed on a substrate; a dielectric layer covering the lower electrode; and an upper electrode spaced apart from the lower electrode. The dielectric layer is disposed between the upper electrode and the lower electrode. A thickness of the dielectric layer is less than or equal to 6 nm, and a grain size in the dielectric layer is between 3 nm and 30 nm.

公开(公告)号：US20220077152A1

公开(公告)日：2022-03-10

申请号：US17199740

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Lim ,  Youngsin Kim ,  Kijin Park ,  Hoju Song ,  Dongkwan Yang ,  Sangho Yun ,  Gyuhyun Lee ,  Jieun Lee ,  Seunguk Han ,  Yoongi Hong

IPC: H01L27/108 ,  H01L29/49 ,  H01L29/78

Abstract: A semiconductor device includes a gate structure on a substrate, first and second spacer structures on first and second sidewalls, respectively, opposite to each other of the gate structure, and first and second source/drain layers at upper portions of the substrate adjacent to the first and second sidewalls, respectively, of the gate structure. An upper surface of the gate structure has a height with reference to an upper surface of the substrate being a base level decreasing from a central portion to the first sidewall and substantially constant from the central portion to the second sidewall.

公开(公告)号：US20250040272A1

公开(公告)日：2025-01-30

申请号：US18756899

申请日：2024-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junoh KIM ,  Munhwan Kim ,  Jieun Lee

IPC: H01L27/146

Abstract: There is provided an image sensor including a substrate, a plurality of pixel groups respectively including a plurality of photodiodes provided in the substrate, a pixel isolation pattern provided between the plurality of photodiodes in the substrate, an auxiliary isolation pattern provided to extend inside from a surface of the substrate, and a micro lens provided on the surface of the substrate. The pixel isolation pattern includes an outer isolation pattern provided between the plurality of pixel groups and an inner isolation pattern provided between the plurality of photodiodes within the plurality of pixel group, and the auxiliary isolation pattern is provided between the outer isolation pattern and the inner isolation pattern that are spaced apart from each other or between a plurality of inner isolation patterns that are spaced apart from each other.

公开(公告)号：US12014215B2

公开(公告)日：2024-06-18

申请号：US17327600

申请日：2021-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jieun Lee ,  Jin-Hong Kim ,  Jaehyung Ahn ,  Sungduk Cho

IPC: G06F9/50 ,  G06F9/38 ,  G06F9/54

CPC classification number: G06F9/5038 ,  G06F9/3877 ,  G06F9/505 ,  G06F9/542

Abstract: An active scheduling method performed with a master processor and a plurality of slave processors. The method includes determining whether a job to be performed has a dependency by referencing a job queue; in a case in which it is determined that the job to be performed has a dependency, updating a state of the job to be performed in a table in which information of each of a plurality of jobs is recorded; analyzing a state of a job preceding the job to be performed based on the table; and in a case in which the job preceding the job to be performed is determined to have been completed, performing the job to be performed by retrieving the job to be performed from the job queue.

公开(公告)号：US11690213B2

公开(公告)日：2023-06-27

申请号：US17199740

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Lim ,  Youngsin Kim ,  Kijin Park ,  Hoju Song ,  Dongkwan Yang ,  Sangho Yun ,  Gyuhyun Lee ,  Jieun Lee ,  Seunguk Han ,  Yoongi Hong

IPC: H10B12/00 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66

CPC classification number: H10B12/315 ,  H01L29/4941 ,  H01L29/66484 ,  H01L29/7831 ,  H01L29/7833

Abstract: A semiconductor device includes a gate structure on a substrate, first and second spacer structures on first and second sidewalls, respectively, opposite to each other of the gate structure, and first and second source/drain layers at upper portions of the substrate adjacent to the first and second sidewalls, respectively, of the gate structure. An upper surface of the gate structure has a height with reference to an upper surface of the substrate being a base level decreasing from a central portion to the first sidewall and substantially constant from the central portion to the second sidewall.

公开(公告)号：US20230200054A1

公开(公告)日：2023-06-22

申请号：US18084190

申请日：2022-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jieun Lee ,  Dongho Yu ,  Deoksung Hwang ,  Gisung Kim ,  Seungyoung Seo

IPC: H10B12/00 ,  H01L23/528 ,  H01L23/522

CPC classification number: H10B12/315 ,  H10B12/482 ,  H01L23/5283 ,  H01L23/5226

Abstract: An integrated circuit device includes a substrate having an active region, a conductive landing pad at a first vertical level above the substrate and connected to the active region, a capacitor including a lower electrode at a second vertical level higher than the first vertical level above the substrate, and a conductive multifunction plug including an extended landing pad portion at a third vertical level between the first vertical level and the second vertical level and contacting the conductive landing pad, and an extended lower electrode portion integrally connected to the extended landing pad portion and contacting the lower electrode. The capacitor further includes a dielectric layer covering a surface of the lower electrode and the extended lower electrode portion of the conductive multifunction plug.

公开(公告)号：US11462010B2

公开(公告)日：2022-10-04

申请号：US16479993

申请日：2017-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boram Lee ,  Jung-Kun Lee ,  Yeseul Hong ,  Jieun Lee

IPC: G06V20/20 ,  G06F3/04817 ,  G06F3/04845 ,  H04M1/02

Abstract: The various embodiments of the present invention relate to an electronic apparatus, and a method for controlling same. The electronic apparatus according to the present invention comprises a display, a communication module, and a processor electrically connected to the display and communication module, wherein the processor controls so that an object detected in an image displayed on the display is recognized, and one or more elements contained in the object are classified and displayed on the display, and can control so that an image similar to the detected object is searched for, by means of the communication module, and displayed on the display.

公开(公告)号：US11185739B2

公开(公告)日：2021-11-30

申请号：US16064159

申请日：2016-12-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungkun Lee ,  Dahee Lee ,  Jieun Lee ,  Yeseul Hong ,  Kwangwon Ko ,  Yeongsook Chae

IPC: G16H50/30 ,  A63B24/00 ,  G16H20/30 ,  G16H40/63 ,  A61B5/0205 ,  A61B5/389 ,  A61B5/0245 ,  A61B5/08 ,  A61B5/107 ,  A61B5/11 ,  A61B5/16 ,  A61B5/22

Abstract: A system for providing a personalised exercise guide according to various embodiments of the present invention may comprise: a wearable device for measuring a first bio-signal of a user using one or more sensors, and for transmitting to an electronic device and measured first bio-signal of the user; and the electronic device for receiving from the wearable device the measured first bio-signal of the user, for obtaining body data of the user based on the received first bio-signal of the user, for calculating a required quantity of exercise based on the obtained body data of the user and a preset goal, and for comparing and analyzing body data variation of the user that is estimated based on the calculated required quantity of exercise with the actual body data variation of the user due to exercise.

公开(公告)号：US20240224503A1

公开(公告)日：2024-07-04

申请号：US18542627

申请日：2023-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheoljin Cho ,  Yukyung Shin ,  Changhwa Jung ,  Jieun Lee ,  Jayun Choi

IPC: H10B12/00

CPC classification number: H10B12/315

Abstract: A semiconductor device includes a substrate, a first electrode disposed above the substrate, a multilayer dielectric structure configured to cover the first electrode, and a second electrode configured to cover the multilayer dielectric structure. The multilayer dielectric structure includes a plurality of dielectric films, a first dielectric film of the plurality of dielectric films includes crystalline TiO2 or crystalline SrTiO3, and a second dielectric film of the plurality of dielectric films is in contact with the first dielectric film and includes a high-k dielectric film having a tetragonal crystal structure.