公开(公告)号：US09660163B2

公开(公告)日：2017-05-23

申请号：US14736217

申请日：2015-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/32 ,  H01L33/20 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US09716214B2

公开(公告)日：2017-07-25

申请号：US15147315

申请日：2016-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon Yoon ,  Hak-hwan Kim ,  Dae-sup Kim ,  Jeong-hee Kim ,  Dong-myung Shin ,  Kwang-seok Yun

IPC: H01L33/16 ,  H01L33/38 ,  H01L33/62 ,  H05B33/08 ,  H01L33/20

CPC classification number: H01L33/62 ,  H01L33/16 ,  H01L33/20 ,  H01L33/38 ,  H05B33/086

Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.

公开(公告)号：US10038127B2

公开(公告)日：2018-07-31

申请号：US15493883

申请日：2017-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.