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公开(公告)号：US20180261722A1
公开(公告)日：2018-09-13
申请号：US15973682
申请日：2018-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-in Yang , Dong-hyuk Joo , Jin-ha Kim , Joon-woo Jeon , Jung-hee Kwak
CPC classification number: H01L33/145 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/52 , H01L33/62
Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.
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Patent Agency Ranking
公开(公告)号：US08877562B2
公开(公告)日：2014-11-04
申请号：US14253478
申请日：2014-04-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Hyung Kim , Cheol-soo Sone , Jong-in Yang , Sang-yeob Song , Si-hyuk Lee
CPC classification number: H01L33/38 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/16 , H01L2933/0066
Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.
Abstract translation: LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。
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公开(公告)号：US10038127B2
公开(公告)日：2018-07-31
申请号：US15493883
申请日：2017-04-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-in Yang , Tae-hyung Kim , Si-hyuk Lee , Sang-yeob Song , Cheol-soo Sone , Hak-hwan Kim , Jin-hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
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公开(公告)号：US10978614B2
公开(公告)日：2021-04-13
申请号：US15973682
申请日：2018-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-in Yang , Dong-hyuk Joo , Jin-ha Kim , Joon-woo Jeon , Jung-hee Kwak
IPC: H01L33/14 , H01L33/44 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/52 , H01L33/62 , H01L33/38
Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.
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公开(公告)号：US10930817B2
公开(公告)日：2021-02-23
申请号：US15385942
申请日：2016-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-in Yang , Dong-hyuk Joo , Jin-ha Kim , Joon-woo Jeon , Jung-hee Kwak
IPC: H01L33/00 , H01L33/14 , H01L33/44 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/52 , H01L33/62 , H01L33/38
Abstract: A light-emitting device includes an emission structure, a current block layer on the emission structure, a reflective layer on the current block layer, a protection layer that covers the reflective layer, and an electrode layer on the protection layer.
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公开(公告)号：US09660163B2
公开(公告)日：2017-05-23
申请号：US14736217
申请日：2015-06-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-in Yang , Tae-hyung Kim , Si-hyuk Lee , Sang-yeob Song , Cheol-soo Sone , Hak-hwan Kim , Jin-hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
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