公开(公告)号：US11151347B1

公开(公告)日：2021-10-19

申请号：US16809164

申请日：2020-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsuk Kim ,  Dongkyun Kim ,  Seogwoo Hong ,  Seokwhan Chung

IPC: G06K9/00

Abstract: A touch-fingerprint complex sensor includes a fingerprint substrate provided in a fingerprint area and a touch area, common electrodes provided above the fingerprint substrate in a direction that is normal to an upper surface of the fingerprint substrate, fingerprint electrodes provided between the fingerprint substrate and the common electrodes in the direction, and touch electrodes provided below the common electrodes and the fingerprint substrate in the direction, wherein a first subset of the common electrodes, and the fingerprint electrodes are provided in the fingerprint area, and a second subset of the common electrodes, and the touch electrodes are provided in the touch area.

公开(公告)号：US10892278B2

公开(公告)日：2021-01-12

申请号：US16509169

申请日：2019-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Hoon Choi ,  Sunggil Kim ,  Seulye Kim ,  Hongsuk Kim ,  Phil Ouk Nam ,  Jaeyoung Ahn

IPC: H01L27/11582 ,  H01L29/06 ,  H01L29/792 ,  H01L29/66 ,  H01L27/11565 ,  H01L29/10 ,  H01L21/28 ,  H01L27/1157 ,  H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L29/51

Abstract: A three-dimensional semiconductor device includes gate electrodes sequentially stacked on a substrate, a channel structure penetrating the gate electrodes and being connected to the substrate, an insulating gap-fill pattern provided within the channel structure and surrounded by the channel structure as viewed in a plan view, and a conductive pattern on the insulating gap-fill pattern. At least a portion of the insulating gap-fill pattern is received in the conductive pattern, and at least a portion of the conductive pattern is interposed between at least that portion of the insulating gap-fill pattern and the channel structure.

公开(公告)号：US10334742B2

公开(公告)日：2019-06-25

申请号：US15599003

申请日：2017-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsuk Kim

IPC: H05K3/20 ,  H05K3/46 ,  H01L21/683 ,  H01L21/78 ,  H01L21/84 ,  H01L51/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/10 ,  H01L51/56 ,  H01L27/12 ,  H01L27/32 ,  H01L21/77

Abstract: Provided is a method of manufacturing an electronic device, the method including: preparing first mother glass and second mother glass; forming, on the first mother glass, a plurality of device cells partially connected to the first mother glass through a plurality of first separating portions; patterning a device circuit on each of the plurality of device cells; forming, on the second mother glass, a plurality of cover cells partially connected to the second mother glass through a plurality of second separating portions; forming a plurality of electronic devices by laminating the first mother glass and the second mother glass together such that the plurality of device cells are respectively aligned to the plurality of cover cells; and separating the plurality of electronic devices from the first mother glass and the second mother glass by cutting the plurality of first separating portions and the plurality of second separating portions.

公开(公告)号：US12147144B2

公开(公告)日：2024-11-19

申请号：US17556490

申请日：2021-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Kim ,  Byonggwon Song ,  Hongsuk Kim ,  Hoon Song ,  Kanghee Won ,  Hongseok Lee ,  Sunghee Jung

IPC: G02F1/29 ,  G02F1/31 ,  G06F3/01 ,  G02B30/00 ,  G02B30/22

Abstract: Provided is a beam deflector including: a first electrode layer including a plurality of electrode patterns that are arranged in a first direction; a second electrode layer provided to oppose the first electrode layer; a liquid crystal layer provided between the first electrode layer and the second electrode layer in a second direction perpendicular to the first direction, and including a plurality of liquid crystal molecules; an input channel unit including a plurality of input channels; a demultiplexer configured to divide each of the input channels into a preset number of divided channels, and connect the divided channels to the electrode patterns; and a control circuit connected to the demultiplexer, and configured to control an output signal output from the divided channels to the first electrode layer.

公开(公告)号：US11237680B2

公开(公告)日：2022-02-01

申请号：US16984685

申请日：2020-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsuk Kim ,  Dongkyun Kim ,  Seogwoo Hong ,  Jinmyoung Kim ,  Jinhee Nam

IPC: G06F3/044 ,  G06K9/00 ,  G06F3/041

Abstract: A touch sensor may include: a touch panel including a plurality of electrodes and a plurality of electrode pads respectively connected to the plurality of electrodes; a bonding layer disposed on and in contact with the plurality of electrode pads; and a printed circuit board including: an insulating layer including a first surface adjacent to the bonding layer and a second surface facing the first surface; a plurality of first bonding pads provided in a first region of the first surface of the insulating layer; a plurality of second bonding pads disposed on the second surface of the insulating layer; and a plurality of extension pads disposed on a second region different from the first region of the first surface of the insulating layer and respectively connected to the plurality of second bonding pads.

公开(公告)号：US10950612B2

公开(公告)日：2021-03-16

申请号：US15981928

申请日：2018-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunggil Kim ,  Sangsoo Lee ,  Seulye Kim ,  Hongsuk Kim ,  Jintae Noh ,  Ji-Hoon Choi ,  Jaeyoung Ahn ,  Sanghoon Lee

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L29/78 ,  G11C16/04 ,  H01L29/66 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575

Abstract: A semiconductor memory device has a plurality of gates vertically stacked on a top surface of a substrate, a vertical channel filling a vertical hole that extends vertically through the plurality of gates, and a memory layer in the vertical hole and surrounding the vertical channel. The vertical channel includes a bracket-shaped lower portion filling part of a recess in the top of the substrate and an upper portion extending vertically along the vertical hole and connected to the lower channel. At least one end of an interface between the lower and upper portions of the vertical channel is disposed at a level not than that of the top surface of the substrate.

公开(公告)号：US12292661B2

公开(公告)日：2025-05-06

申请号：US17892752

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongsuk Kim ,  Young Kim ,  Hoon Song

IPC: G02F1/1347 ,  G02F1/1335 ,  G02F1/1368

Abstract: An electronic device including a transfer layer, a method of manufacturing the electronic device, and an electronic apparatus including the electronic device are provided. The electronic device includes a substrate having a thickness less than 0.7 mm; a first transfer layer provided on a first surface of the substrate, the first transfer layer including an organic material; and a first stack provided on the first transfer layer.

公开(公告)号：US10396094B2

公开(公告)日：2019-08-27

申请号：US15849121

申请日：2017-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Hoon Choi ,  Sunggil Kim ,  Seulye Kim ,  Hongsuk Kim ,  Phil Ouk Nam ,  Jaeyoung Ahn

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/06 ,  H01L29/10 ,  H01L29/51 ,  H01L29/66 ,  H01L21/311 ,  H01L29/792 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11582

Abstract: A three-dimensional semiconductor device includes gate electrodes sequentially stacked on a substrate, a channel structure penetrating the gate electrodes and being connected to the substrate, an insulating gap-fill pattern provided within the channel structure and surrounded by the channel structure as viewed in a plan view, and a conductive pattern on the insulating gap-fill pattern. At least a portion of the insulating gap-fill pattern is received in the conductive pattern, and at least a portion of the conductive pattern is interposed between at least that portion of the insulating gap-fill pattern and the channel structure.