公开(公告)号：US20230332015A1

公开(公告)日：2023-10-19

申请号：US18096231

申请日：2023-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkwon KIM ,  Yearin Byun ,  Sangkyun KIM ,  Boun YOON ,  Hyosan LEE

IPC: H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76843

Abstract: A slurry composition for polishing metal and a method of manufacturing an integrated circuit device, the slurry composition includes a first organic polishing booster including a cationic polymer salt that includes a quaternary ammonium cation; a second organic polishing booster including an organic acid; an oxidizer; a pH adjuster; 0 wt% to about 0.1 wt% of an inorganic abrasive; and water.

公开(公告)号：US20240318038A1

公开(公告)日：2024-09-26

申请号：US18610982

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghwa Lee ,  Yearin Byun ,  Inkwon Kim

IPC: C09G1/02 ,  C07F5/00 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  C07F5/003 ,  C09K3/1409 ,  H01L21/31053 ,  H01L21/3212

Abstract: Provided are a method of manufacturing a chemical mechanical polishing slurry and a method of manufacturing a semiconductor device using the same. The method of manufacturing a chemical mechanical polishing slurry includes mixing a first precursor including cerium and a second precursor in an aqueous solution, forming nanoclusters including cerium by a reaction (e.g., a synthesis reaction) between the first precursor and the second precursor, and forming a chemical mechanical polishing slurry by mixing at least one of a pH adjuster, deionized water, an inhibitor, a booster, and a dispersant with the nanoclusters.

公开(公告)号：US20240318040A1

公开(公告)日：2024-09-26

申请号：US18609533

申请日：2024-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yearin Byun ,  Jeongwon Lim ,  Boyun Kim ,  Sanghyun Park ,  Seungho Park

IPC: C09G1/04 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/3212 ,  H01L21/32051

Abstract: Provided is a chemical mechanical polishing (CMP) slurry composition including an organic booster including an amino acid, a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition, wherein a material constituting a remaining part of the CMP slurry composition is deionized water (DIW).

公开(公告)号：US20240318037A1

公开(公告)日：2024-09-26

申请号：US18609795

申请日：2024-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yearin Byun ,  Eunock Kim ,  Suyeong Jung ,  Hyungoo Kong ,  Inkwon Kim ,  Sanghyun Park

IPC: C09G1/02 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/32051

Abstract: The present disclosure relates to slurry compositions used for chemical mechanical polishing of a metal film. An example slurry composition includes abrasive particles, deionized water, and an oxidizer. The oxidizer includes iodine, and is a temperature-sensitive oxidizer capable of controlling both a static etch rate and a removal rate of the metal film when a polishing temperature during the chemical mechanical polishing is about 5° C. to about 100° C.

公开(公告)号：US20230352310A1

公开(公告)日：2023-11-02

申请号：US18190300

申请日：2023-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yearin Byun ,  In Kwon Kim ,  Sang Kyun Kim ,  Hyo San Lee

IPC: H01L21/02 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/321

CPC classification number: H01L21/31055 ,  C09G1/02 ,  H01L21/02052 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/3212

Abstract: A chemical mechanical polishing method may include polishing a polishing object at a first temperature using a chemical mechanical polishing slurry; and removing the chemical mechanical polishing slurry on the polishing object at a second temperature different from the first temperature. The chemical mechanical polishing slurry may include abrasive particles, a thermoresponsive inhibitor, and deionized water. The thermoresponsive inhibitor may include a thermoresponsive polymer exhibiting a phase-transition between the first temperature and the second temperature. The thermoresponsive polymer may be adsorbed to the hydrophobic layer at the first temperature and desorbed from the hydrophobic layer at the second temperature.