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公开(公告)号:US20170261317A1
公开(公告)日:2017-09-14
申请号:US15448325
申请日:2017-03-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung Yoon LEE , Chan HWANG , Jeong Jin LEE
CPC classification number: G01B11/272 , G01B11/002 , G03F9/7084 , H01L2224/16145
Abstract: A method for measuring wafer alignment is provided. The method includes providing a plurality of first mark patterns extending in a first direction on a wafer, providing at least one second mark pattern on the first mark patterns such that it overlaps and intersects the first mark patterns, irradiating an optical signal onto the first mark patterns and the second mark pattern and obtaining coordinates of the second mark pattern by detecting signals from the second mark pattern.
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公开(公告)号:US20190278393A1
公开(公告)日:2019-09-12
申请号:US16334952
申请日:2017-09-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Jun LEE , Jeong Jin LEE , Soo Hyun SEO , Bo Hwa CHUNG , Min Jung KIM
IPC: G06F3/0354 , G06F3/0485 , G06F3/0488
Abstract: An electronic device includes a display displaying an execution screen of an application, a touch pad receiving a user input associated with control of the execution screen, and a processor controlling scroll processing of the execution screen. The processor is configured to divide the touch pad into a plurality of virtual regions and to add a first threshold value of a minimum magnitude for determining that the continuous user input is a scroll control input of the execution screen to the second coordinates when the user input is continuous from first coordinates of a first virtual region to second coordinates of a second virtual region adjacent to the first virtual region at a specified speed or more.
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公开(公告)号:US20230197742A1
公开(公告)日:2023-06-22
申请号:US18061628
申请日:2022-12-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeong Soon KANG , Chang Yong UM , Jeong Jin LEE
IPC: H01L27/146
CPC classification number: H01L27/14616 , H01L27/14645
Abstract: An image sensor includes a first semiconductor substrate, a photoelectric conversion region in the first semiconductor substrate, and a buried insulating film on the first semiconductor substrate. The buried insulating film covers a first region of the first semiconductor substrate and exposes a second region of the first semiconductor substrate. The sensor includes a second semiconductor substrate on the buried insulating film, an operating gate structure defining a first channel of a first conductive type in the second semiconductor substrate, and a transfer gate structure defining a second channel of a second conductive type different from the first conductive type in the second region of the first semiconductor substrate.
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公开(公告)号:US20170357154A1
公开(公告)日:2017-12-14
申请号:US15392297
申请日:2016-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: SEUNG HWA OH , Seung Yoon LEE , Jeong Jin LEE
CPC classification number: G03F1/44 , G01B11/005 , G03F1/36 , G03F1/42 , G03F7/70633 , G03F7/70683 , H01L21/0273 , H01L22/12 , H01L22/20 , H01L22/30
Abstract: A method may include forming a first grating and a second grating, disposed in a region of vertical overlap of the first and second gratings on different levels, respectively, having substantially the same pitch, and inclined with respect to each other, such that a bias value between the first and second gratings is changed along a length direction of the first and second gratings, using a lithography process. A method may include emitting a beam to the first and second gratings; and obtaining trend information associated with a diffracted beam from an image pattern of a beam from the first and second gratings, using the emitted beam, in which the trend information may concern changes in the intensity of the diffracted beam according to the bias value. An overlay error in at least one grating may be determined based on the trend information and an intensity of a diffracted beam.
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公开(公告)号:US20240213023A1
公开(公告)日:2024-06-27
申请号:US18373455
申请日:2023-09-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doo Gyu LEE , Jeong Jin LEE , Min-Cheol KWAK , Seung Yoon LEE , Chan HWANG
IPC: H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/66
CPC classification number: H01L21/0273 , H01L21/31144 , H01L21/32139 , H01L22/12
Abstract: A method for fabricating a semiconductor device using an overlay measurement and a semiconductor device fabricated by the method are provided. The method includes forming a lower pattern including a lower overlay key pattern having a first pitch, on a substrate, forming an upper pattern including an upper overlay key pattern having a second pitch different from the first pitch, on the lower pattern, measuring an overlay between the lower overlay key pattern and the upper overlay key pattern, removing the upper overlay key pattern, and after removing the upper overlay key pattern, performing an etching process using the upper pattern as an etching mask.
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公开(公告)号:US20180224993A1
公开(公告)日:2018-08-09
申请号:US15889948
申请日:2018-02-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung Jun LEE , Seung Ho KANG , Ki Won KIM , Jeong Jin LEE , Hye Lin LEE , Il Joo CHAE , Jae Min LEE , Min Jung KIM
IPC: G06F3/041
CPC classification number: G06F3/0414 , G06F2203/04104 , G06F2203/04105
Abstract: An electronic device is provided. The electronic device includes a touch input device, a touch control circuit configured to generate touch information about a touch input detected by the touch input device, at least one processor, and a memory. The memory stores instructions, when executed, causing the at least one processor to obtain touch information about a first touch input at least once from the touch control circuit after a first time when the first touch input begins to a second time when the first touch input is released, obtain at least one of an area of the first touch input or a pressure of the first touch input based on the obtained touch information, and execute a function corresponding to release of the first touch input if the at least one of the area of the first touch input or the pressure of the first touch input meets a specified condition.
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