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    Semiconductor devices and methods of manufacturing the same
    1.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US11411004B2

    公开(公告)日：2022-08-09

    申请号：US16903040

    申请日：2020-06-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Yanghee Lee ,  Jonghyuk Park ,  Ilyoung Yoon ,  Boun Yoon ,  Heesook Cheon

    IPC分类号： H01L27/108

    摘要： A semiconductor device includes a substrate including first and second region, a bit line structure on the first region, key structures on the second region, each key structure having an upper surface substantially coplanar with an upper surface of the bit line structure, a first trench disposed between two adjacent key structures spaced apart from each other in a first direction, a filling pattern in a lower portion of the first trench, the filling pattern having a flat upper surface and including a first conductive material, and a first conductive structure on the flat upper surface of the filling pattern, an upper sidewall of the first trench, and the upper surface of each of the plurality of key structures, the first conductive structure including a second conductive material.

    Method of fabricating semiconductor device
    2.
    发明授权
    Method of fabricating semiconductor device 有权

    公开(公告)号：US10756092B2

    公开(公告)日：2020-08-25

    申请号：US16814387

    申请日：2020-03-10

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jonghyuk Park ,  Byoungho Kwon ,  Inho Kim ,  Hyesung Park ,  Jin-Woo Bae ,  Yanghee Lee ,  Inseak Hwang

    IPC分类号： H01L27/108 ,  H01L21/66

    摘要： A method of fabricating a semiconductor device includes providing a substrate including a pair of first regions and a second region therebetween, forming first patterns on the respective first regions to at least partially define a stepwise portion at the second region, and forming a dummy pattern that at least partially fills the stepwise portion. The dummy pattern may be an electrically floating structure. The dummy pattern may be formed as part of forming second patterns on the respective first regions, and the dummy pattern and the second patterns may include substantially common materials. Because the dummy pattern at least partially fills the stepwise portion at the second region, the material layer covering the second patterns and the dummy pattern may omit a corresponding stepwise portion.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    7.
    发明公开
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240155830A1

    公开(公告)日：2024-05-09

    申请号：US18413434

    申请日：2024-01-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Yanghee Lee ,  Jonghyuk Park ,  Ilyoung Yoon ,  Boun Yoon ,  Heesook Cheon

    IPC分类号： H10B12/00

    CPC分类号： H10B12/37 ,  H10B12/0387 ,  H10B12/482 ,  H10B12/50

    摘要： A semiconductor device includes a substrate including first and second region, a bit line structure on the first region, key structures on the second region, each key structure having an upper surface substantially coplanar with an upper surface of the bit line structure, a first trench disposed between two adjacent key structures spaced apart from each other in a first direction, a filling pattern in a lower portion of the first trench, the filling pattern having a flat upper surface and including a first conductive material, and a first conductive structure on the flat upper surface of the filling pattern, an upper sidewall of the first trench, and the upper surface of each of the plurality of key structures, the first conductive structure including a second conductive material.

    Semiconductor devices and methods of manufacturing the same
    8.
    发明授权
    Semiconductor devices and methods of manufacturing the same 有权

    公开(公告)号：US11910594B2

    公开(公告)日：2024-02-20

    申请号：US17859247

    申请日：2022-07-07

    申请人： Samsung Electronics Co., Ltd.

    发明人： Yanghee Lee ,  Jonghyuk Park ,  Ilyoung Yoon ,  Boun Yoon ,  Heesook Cheon

    IPC分类号： H10B12/00

    CPC分类号： H10B12/37 ,  H10B12/0387 ,  H10B12/482 ,  H10B12/50

    摘要： A semiconductor device includes a substrate including first and second region, a bit line structure on the first region, key structures on the second region, each key structure having an upper surface substantially coplanar with an upper surface of the bit line structure, a first trench disposed between two adjacent key structures spaced apart from each other in a first direction, a filling pattern in a lower portion of the first trench, the filling pattern having a flat upper surface and including a first conductive material, and a first conductive structure on the flat upper surface of the filling pattern, an upper sidewall of the first trench, and the upper surface of each of the plurality of key structures, the first conductive structure including a second conductive material.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210134806A1

    公开(公告)日：2021-05-06

    申请号：US16903040

    申请日：2020-06-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Yanghee Lee ,  Jonghyuk Park ,  Ilyoung Yoon ,  Boun Yoon ,  Heesook Cheon

    IPC分类号： H01L27/108

    摘要： A semiconductor device includes a substrate including first and second region, a bit line structure on the first region, key structures on the second region, each key structure having an upper surface substantially coplanar with an upper surface of the bit line structure, a first trench disposed between two adjacent key structures spaced apart from each other in a first direction, a filling pattern in a lower portion of the first trench, the filling pattern having a flat upper surface and including a first conductive material, and a first conductive structure on the flat upper surface of the filling pattern, an upper sidewall of the first trench, and the upper surface of each of the plurality of key structures, the first conductive structure including a second conductive material.