公开(公告)号：US10171078B2

公开(公告)日：2019-01-01

申请号：US14882714

申请日：2015-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Bum Kim ,  Sangchul Kang ,  Jinho Ryu ,  Seokcheon Kwon

IPC: G11C5/06 ,  G11C7/10 ,  H03K19/00

Abstract: Non-volatile memory devices including on-die termination circuits connected to an input/output circuit and an on-die termination control logic detecting a preamble of a strobe signal based on a command and a control signal and activating the on-die termination within the preamble period.

公开(公告)号：US09543032B2

公开(公告)日：2017-01-10

申请号：US14518176

申请日：2014-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchul Kang ,  Seokcheon Kwon ,  Soo-Woong Lee

IPC: G11C16/04 ,  G11C16/30 ,  G11C11/56 ,  G11C16/06 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/30 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/10 ,  G11C16/3436

Abstract: A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines.

Abstract translation: 一种非易失性存储器件包括包括多个字线的非易失性存储单元阵列，电压发生器，其被配置为使用高于该电压的外部电压产生使用电源电压的第一高电压和第二高电压， 电源电压和配置的字线选择电路。 字线选择电路被配置为在存储单元阵列的编程操作期间将第一高电压施加到多个字线中的选定字线，并且多个字线中的第二高电压至未选字线 字线。